STMICROELECTRONICS STP8NC60FP

STP8NC60
STP8NC60FP
N-CHANNEL 600V - 0.85Ω - 7A TO-220/TO-220FP
PowerMesh™II MOSFET
TYPE
STP8NC60
STP8NC60FP
■
■
■
■
■
VDSS
RDS(on)
ID
600 V
600 V
< 1.0 Ω
< 1.0 Ω
7A
7A
TYPICAL RDS(on) = 0.85Ω
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
NEW HIGH VOLTAGE BENCHMARK
GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH™II is the evolution of the first
generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area
figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate
charge and ruggedness.
3
1
TO-220
2
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVES
■
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
STP8NC60
VDS
VDGR
VGS
Unit
STP8NC60FP
Drain-source Voltage (VGS = 0)
600
V
Drain-gate Voltage (RGS = 20 kΩ)
600
V
Gate- source Voltage
±30
V
ID
Drain Current (continuos) at TC = 25°C
7
7 (*)
ID
Drain Current (continuos) at TC = 100°C
4.4
4.4 (*)
A
Drain Current (pulsed)
28
28 (*)
A
Total Dissipation at TC = 25°C
125
30
W
Derating Factor
1.0
0.24
W/°C
IDM (●)
PTOT
dv/dt (1)
Peak Diode Recovery voltage slope
VISO
Insulation Withstand Voltage (DC)
Tstg
Storage Temperature
Tj
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
(*) Limited only by maximum temperature allowed
July 2001
3.5
-
A
V/ns
2500
V
–65 to 150
°C
150
°C
(1)ISD ≤7A, di/dt ≤100A/µs, V DD ≤ V(BR)DSS, Tj ≤ TJMAX.
1/9
STP8NC60/STP8NC60FP
THERMAL DATA
TO-220
TO-220FP
1
4.125
Rthj-case
Thermal Resistance Junction-case Max
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
°C/W
Maximum Lead Temperature For Soldering Purpose
300
°C
Tl
°C/W
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
Unit
7
A
300
mJ
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
V(BR)DSS
IDSS
IGSS
Parameter
Test Conditions
Min.
Typ.
Max.
600
Unit
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
V
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
1
µA
VDS = Max Rating, TC = 125 °C
50
µA
Gate-body Leakage
Current (VDS = 0)
VGS = ±30V
±100
nA
ON (1)
Symbol
Parameter
Test Conditions
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250µA
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 3.5 A
Min.
Typ.
Max.
Unit
2
3
4
V
0.85
1.0
Ω
Typ.
Max.
Unit
DYNAMIC
Symbol
gfs (1)
2/9
Parameter
Forward Transconductance
Test Conditions
VDS > ID(on) x RDS(on)max,
ID = 3.5A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
6.7
S
1060
pF
Ciss
Input Capacitance
Coss
Output Capacitance
145
pF
Crss
Reverse Transfer
Capacitance
20
pF
STP8NC60/STP8NC60FP
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
td(on)
tr
Parameter
Turn-on Delay Time
Rise Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Test Conditions
Min.
VDD = 300 V, ID = 3.5 A
RG = 4.7Ω VGS = 10 V
(see test circuit, Figure 3)
VDD = 480V, ID = 7 A,
VGS = 10V
Typ.
Max.
Unit
17
ns
10
ns
34.5
48
nC
5.6
nC
17.5
nC
SWITCHING OFF
Symbol
tr(Voff)
Parameter
Off-voltage Rise Time
tf
Fall Time
tc
Cross-over Time
Test Conditions
Min.
VDD = 480V, ID = 7 A,
RG = 4.7Ω, VGS = 10V
(see test circuit, Figure 5)
Typ.
Max.
Unit
8
ns
9
ns
18
ns
SOURCE DRAIN DIODE
Symbol
ISD
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
7
A
Source-drain Current
ISDM (2)
Source-drain Current (pulsed)
VSD (1)
Forward On Voltage
ISD = 7 A, VGS = 0
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ISD =7 A, di/dt = 100A/µs
VDD = 100V, Tj = 150°C
(see test circuit, Figure 5)
IRRM
Reverse Recovery Current
28
A
1.6
V
530
ns
3.58
µC
13.5
A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Safe Operating Area for TO-220
Safe Operating Area for TO-220FP
3/9
STP8NC60/STP8NC60FP
Thermal Impedance for TO-220
Output Characteristics
Transconductance
4/9
Thermal Impedance for TO-220FP
Transfer Characteristics
Static Drain-source On Resistance
STP8NC60/STP8NC60FP
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Thereshold Voltage vs Temp.
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/9
STP8NC60/STP8NC60FP
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/9
STP8NC60/STP8NC60FP
TO-220 MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
D1
0.107
1.27
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
L2
16.4
0.645
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
D1
C
D
A
E
L4
H2
G
G1
F1
L2
F2
F
Dia.
L5
L9
L7
L6
L4
P011C
7/9
STP8NC60/STP8NC60FP
TO-220FP MECHANICAL DATA
mm
DIM.
MIN.
inch
MAX.
MIN.
A
4.4
TYP.
4.6
0.173
TYP.
MAX.
0.181
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.45
0.7
0.017
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
28.6
30.6
1.126
1.204
L4
9.8
10.6
0.385
0.417
L6
15.9
16.4
0.626
0.645
L7
9
9.3
0.354
0.366
Ø
3
3.2
0.118
0.126
L2
16
0.630
B
D
A
E
L3
L3
L6
F2
H
G
G1
¯
F
F1
L7
1 2 3
L2
8/9
L4
STP8NC60/STP8NC60FP
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