STMICROELECTRONICS STPS80H100TV

STPS80H100TV

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
IF(AV)
2 x 40 A
VRRM
Tj (max)
100 V
150 °C
VF (max)
0.65 V
K2
A2
K1
A1
FEATURES AND BENEFITS
NEGLIGIBLESWITCHING LOSSES
HIGH JUNCTION TEMPERATURE CAPABILITY
LOW LEAKAGE CURRENT
GOODTRADE OFF BETWEEN LEAKAGECURRENT AND FORWARD VOLTAGE DROP
AVALANCHE RATED
LOW INDUCTANCE PACKAGE
INSULATED PACKAGE :
Insulated voltage = 2500 V (RMS)
Capacitance = 45 pF
DESCRIPTION
High voltage dual Schottky barrier rectifier
designed for high frequency telecom and
computer Switched Mode Power Supplies
and other power converters.
ISOTOPTM
Packaged in ISOTOP, this device is intended for
use in medium voltage operation, and particularly, in high frequen cy circuitries where low
switching losses and low noise are required.
ABSOLUTE RATINGS (limiting values, per diode)
Symbol
Parameter
VRRM
Repetitive peak reverse voltage
IF(RMS)
RMS forward current
IF(AV)
Average forward current
Tc = 120°C
δ = 0.5
IFSM
Surge non repetitive forward current
IRRM
IRSM
Repetitive peak reverse current
Non repetitive peak reverse current
tp = 10 ms sinusoidal
tp = 2 µs square F = 1kHz
T stg
Tj
Storage temperature range
Maximum operating junction temperature *
dV/dt
* :
Per diode
Per device
tp = 100 µs square
Critical rate of rise of reverse voltage
Value
Unit
100
V
125
A
40
80
A
700
A
2
5
A
A
- 55 to+ 150
150
°C
10000
V/µs
°C
dPtot
1
<
thermal runaway condition for a diode on its own heatsink
dTj
Rth(j−a)
July 1999 - Ed: 3A
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STPS80H100TV
THERMAL RESISTANCES
Symbol
Parameter
Junction to case
Rth (j-c)
Value
Unit
1
°C/W
Per leg
Total
Rth (c)
0.55
0.1
Coupling
When the diodes 1 and 2 are used simultaneously:
∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Parameter
Tests Conditions
IR *
Reverse leakage current
Tj = 25°C
Min.
Typ.
Max.
Unit
20
µA
7
25
mA
V
0.61
0.78
0.65
VR = VRRM
Tj = 125°C
VF **
Forward voltage drop
Tj = 25°C
Tj = 125°C
IF = 40 A
IF = 40 A
Tj = 25°C
IF = 80 A
Tj = 125°C
IF = 80 A
0.89
0.7
0.74
* tp = 5 ms, δ < 2%
** tp = 380 µs, δ < 2%
Pulse test :
To evaluate the maximum conduction losses use the following equation :
P = 0.56 x IF(AV) + 0.0022 x IF2(RMS)
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
Fig. 2: Average forward current versus ambient
temperature (δ=0.5, per diode).
PF(av)(W)
IF(av)(A)
35
δ = 0.05
30
δ = 0.1
δ = 0.2
δ = 0.5
25
δ=1
20
15
10
T
5
0
δ=tp/T
IF(av) (A)
0
2/4
5
10
15
20
25
30
35
40
tp
45
50
50
45
40
35
30
25
20
15
10
5
0
Rth(j-a)=Rth(j-c)
Rth(j-a)=5°C/W
T
δ=tp/T
0
Tamb(°C)
tp
25
50
75
100
125
150
STPS80H100TV
Fig. 3: Non repetitive surge peak forward current
versusoverloadduration(maximum values, perdiode).
Fig. 4: Relative variation of thermal impedance
junction to case versus pulse duration (per diode).
Zth(j-c)/Rth(j-c)
IM(A)
500
1.0
400
0.8
300
0.6
δ = 0.5
Tc=50°C
0.4
200
Tc=75°C
100
Tc=110°C
0
1E-3
Single pulse
t(s)
δ=0.5
T
0.2
IM
t
δ = 0.2
δ = 0.1
1E-2
1E-1
1E+0
Fig. 5: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
0.0
1E-3
δ=tp/T
tp(s)
1E-2
1E-1
tp
1E+0
5E+0
Fig. 6: Junction capacitance versus reverse
voltage applied (typical values, per diode).
C(nF)
IR(µA)
5.0
1E+4
Tj=125°C
F=1MHz
Tj=25°C
1E+3
1E+2
1.0
1E+1
1E+0
1E-1
Tj=25°C
VR(V)
VR(V)
0
10
20
30
40
50
60
70
80
90 100
0.1
1
2
5
10
20
50
100
Fig. 7: Forward voltage drop versus forward
current (maximum values, per diode).
IFM(A)
500
100
Tj=125°C
Tj=25°C
10
VFM(V)
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
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STPS80H100TV
PACKAGE MECHANICAL DATA
ISOTOPTM
DIMENSIONS
REF.
Millimeters
Min.
A
A1
B
C
C2
D
D1
E
E1
E2
G
G1
G2
F
F1
P
P1
S
Max.
11.80
12.20
8.90
9.10
7.8
8.20
0.75
0.85
1.95
2.05
37.80
38.20
31.50
31.70
25.15
25.50
23.85
24.15
24.80 typ.
14.90
15.10
12.60
12.80
3.50
4.30
4.10
4.30
4.60
5.00
4.00
4.30
4.00
4.40
30.10
30.30
Inches
Min.
Max.
0.465
0.480
0.350
0.358
0.307
0.323
0.030
0.033
0.077
0.081
1.488
1.504
1.240
1.248
0.990
1.004
0.939
0.951
0.976 typ.
0.587
0.594
0.496
0.504
0.138
0.169
0.161
0.169
0.181
0.197
0.157
0.69
0.157
0.173
1.185
1.193
Cooling method: C
Recommended torque value: 1.3 N.m.
Maximum torque value: 1.5 N.m.
Ordering type
Marking
STPS80H100TV STPS80H100TV
Package
Weight
Base qty
Delivery mode
ISOTOP
27g
without screws
10
Tube
Epoxy meets UL94,V0
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use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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 1999 STMicroelectronics - Printed in Italy - All rights reserved.
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