STPS40L45CT/CW ® LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCTS CHARACTERISTICS IF(AV) 2 x 20 A VRRM 45 V Tj (max) 150 °C VF (max) 0.49 V A1 K A2 FEATURES AND BENEFITS n n n LOW FORWARD VOLTAGE DROP MEANING VERY SMALL CONDUCTION LOSSES LOW DYNAMIC LOSSES AS A RESULT OF THE SCHOTTKY BARRIER AVALANCHE RATED A1 K A2 A2 K A1 TO-247 STPS40L45CW TO-220AB STPS40L45CT DESCRIPTION Dual center tap Schottky barrier rectifier designed for high frequency Switched Mode Power Supplies and DC to DC converters. Packaged in TO-220AB and TO-247 this device is intended for use in low voltage, high frequency inverters, free-wheeling and polarity protection applications. ABSOLUTE RATINGS (limiting values, per diode) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 45 V IF(RMS) RMS forward current 30 A 20 40 A 230 A IF(AV) Average forward current Tc = 130°C δ = 0.5 IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal IRRM Repetitive peak reverse current tp = 2 µs square F = 1kHz 2 A IRSM Non repetitive peak reverse current tp = 100 µs square 3 A Tstg Storage temperature range - 65 to + 150 °C 150 °C 10000 V/µs Tj dV/dt * : Per diode Per device Maximum operating junction temperature * Critical rate of rise of reverse voltage dPtot 1 thermal runaway condition for a diode on its own heatsink < dTj Rth(j − a) November 1999 - Ed: 1 1/5 STPS40L45CT/CW THERMAL RESISTANCES Symbol Parameter Rth (j-c) Value Unit 1.5 0.8 0.1 °C/W Per diode Total Junction to case Rth(c) Coupling °C/W When the diodes 1 and 2 are used simultaneously : ∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter IR * Reverse leakage current Tj = 25°C Forward voltage drop Tj = 25°C IF = 20 A Tj = 125°C IF = 20 A Tj = 25°C IF = 40 A Tj = 125°C IF = 40 A VF * Tests Conditions Min. Typ. VR = VRRM 40 Tj = 100°C 0.42 Max. Unit 0.8 mA 130 mA 0.53 V 0.49 0.69 0.6 0.7 Pulse test : * tp = 380 µs, δ < 2% To evaluate the conduction losses use the following equation : P = 0.28 x IF(AV) + 0.0105 IF2(RMS) Fig. 1: Average forward power dissipation versus average forward current (per diode). Fig. 2: Average forward current versus ambient temperature (δ = 0.5, per diode) PF(av)(W) IF(av)(A) 16 δ = 0.1 14 δ = 0.2 δ = 0.5 δ = 0.05 12 10 δ=1 8 6 T 4 2 0 IF(av) (A) 0 2/5 2 4 6 8 δ=tp/T tp 10 12 14 16 18 20 22 24 22 20 18 16 14 12 10 8 6 4 2 0 Rth(j-a)=Rth(j-c) Rth(j-a)=15°C/W T δ=tp/T 0 Tamb(°C) tp 25 50 75 100 125 150 STPS40L45CT/CW Fig. 3: Non repetitive surge peak forward current versus overload duration (maximum values, per diode). Fig. 4: Relative variation of thermal impedance junction to case versus pulse duration. Zth(j-c)/Rth(j-c) IM(A) 1.0 250 225 200 175 150 125 100 75 50 IM 25 0 1E-3 0.8 0.6 δ = 0.5 Tc=25°C 0.4 Tc=75°C δ = 0.2 δ = 0.1 T 0.2 t Tc=125°C t(s) δ=0.5 1E-2 1E-1 tp(s) Single pulse 1E+0 Fig. 5: Reverse leakage current versus reverse voltage applied (typical values, per diode). 0.0 1E-4 1E-3 1E-2 δ=tp/T 1E-1 tp 1E+0 Fig. 6: Junction capacitance versus reverse voltage applied (typical values, per diode). C(nF) IR(mA) 10.0 1E+3 F=1MHz Tj=25°C Tj=150°C 1E+2 Tj=125°C 1E+1 1.0 Tj=75°C 1E+0 0.1 VR(V) 1E-2 VR(V) Tj=25°C 1E-1 0 5 10 15 20 25 30 35 40 1 10 100 45 Fig. 7: Forward voltage drop versus forward current (maximum values, per diode). IFM(A) 1000 100 Typical values Tj=150°C Tj=125°C 10 Tj=75°C Tj=25°C VFM(V) 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 3/5 STPS40L45CT/CW PACKAGE MECHANICAL DATA TO-220AB DIMENSIONS REF. A H2 Dia Min. C L5 L7 L6 L2 F2 F1 D L9 L4 F M G1 E G n n n Cooling method : C Recommended torque value : 0.55m.N Maximum torque value : 0.70 m.N 4/5 Millimeters A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M Diam. Max. 4.40 4.60 1.23 1.32 2.40 2.72 0.49 0.70 0.61 0.88 1.14 1.70 1.14 1.70 4.95 5.15 2.40 2.70 10 10.40 16.4 typ. 13 14 2.65 2.95 15.25 15.75 6.20 6.60 3.50 3.93 2.6 typ. 3.75 3.85 Inches Min. Max. 0.173 0.181 0.048 0.051 0.094 0.107 0.019 0.027 0.024 0.034 0.044 0.066 0.044 0.066 0.194 0.202 0.094 0.106 0.393 0.409 0.645 typ. 0.511 0.551 0.104 0.116 0.600 0.620 0.244 0.259 0.137 0.154 0.102 typ. 0.147 0.151 STPS40L45CT/CW PACKAGE MECHANICAL DATA TO-247 DIMENSIONS REF. V Millimeters Inches Min. Typ. Max. Min. Typ. Max. Dia. V A H L5 L L2 L4 F2 F1 L1 F3 V2 F4 D L3 F(x3) M G = n n n = 0.203 0.102 0.031 0.055 0.118 0.078 0.094 0.133 0.429 0.620 0.793 0.169 0.728 0.582 1.362 0.216 0.118 5° 60° 0.143 Cooling method : C Recommended torque value : 0.8m.N Maximum torque value : 1.0m.N Ordering type n E A 4.85 5.15 0.191 D 2.20 2.60 0.086 E 0.40 0.80 0.015 F 1.00 1.40 0.039 F1 3.00 F2 2.00 F3 2.00 2.40 0.078 F4 3.00 3.40 0.118 G 10.90 H 15.45 15.75 0.608 L 19.85 20.15 0.781 L1 3.70 4.30 0.145 L2 18.50 L3 14.20 14.80 0.559 L4 34.60 L5 5.50 M 2.00 3.00 0.078 V 5° V2 60° Dia. 3.55 3.65 0.139 Marking Package Weight Base qty Delivery mode STPS40L45CT STPS40L45CT TO-220AB 2g 50 Tube STPS40L45CW STPS40L45CW TO-247 4.4g 30 Tube Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5