STMICROELECTRONICS STSA851

STSA851
®
LOW VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
PRELIMINARY DATA
■
■
■
Ordering
Code
Marking
STSA851
SA851
STSA851-AP
SA851
Package
/ Shipment
TO-92 / Bulk
TO-92
/ Ammopack
VERY LOW COLLECTOR TO EMITTER
SATURATION VOLTAGE
HIGH CURRENT GAIN CHARACTERISTIC
FAST-SWITCHING SPEED
APPLICATIONS:
EMERGENCY LIGHTING
■ VOLTAGE REGULATORS
■ RELAY DRIVERS
■ HIGH EFFICIENCY LOW VOLTAGE
SWITCHING APPLICATIONS
■
DESCRIPTION
The device is manufactured in NPN Planar
Technology by using a "Base Island" layout.
The resulting Transistor shows exceptional high
gain performance coupled with very low
saturation voltage.
TO-92
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V CBO
Collector-Base Voltage (I E = 0)
V CEO
Collector-Emitter Voltage (I B = 0)
V EBO
IC
I CM
IB
Unit
150
V
60
V
Emitter-Base Voltage (I C = 0)
7
V
Collector Current
5
A
Collector Peak Current (t p < 5 ms)
Base Current
P tot
Total Dissipation at T amb = 25 o C
T stg
Storage Temperature
Tj
Value
Max. Operating Junction Temperature
September 2003
15
A
1
A
1.1
W
-65 to 150
o
C
150
o
C
1/8
STSA851
THERMAL DATA
R thj-amb
R thj-case
Thermal Resistance Junction-ambient
Thermal Resistance Junction-case
Max
Max
o
114
83.3
o
C/W
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
I CBO
Collector Cut-off
Current (I E = 0)
V CB = 120 V
V CB = 120 V
I EBO
Emitter Cut-off Current
(I C = 0)
V EB = 7 V
Min.
Typ.
T j = 100 o C
Max.
Unit
50
1
nA
µA
10
nA
V (BR)CBO ∗ Collector-Base
Breakdown Voltage
(I E = 0)
I C = 100 µA
150
V
V (BR)CEO ∗ Collector-Emitter
Breakdown Voltage
(I B = 0)
I C = 10 mA
60
V
V (BR)EBO ∗ Emitter-Base
Breakdown Voltage
(I C = 0)
I E = 100 µA
7
V
V CE(sat) ∗
Collector-Emitter
Saturation Voltage
IC
IC
IC
IC
V BE(sat) ∗
Base-Emitter
Saturation Voltage
V BE(on) ∗
h FE ∗
fT
C CBO
t ON
ts
tf
I B = 5 mA
I B = 50 mA
I B = 50 mA
I B = 200 mA
10
70
140
320
50
120
200
450
mV
mV
mV
mV
IC = 4 A
I B = 200 mA
1
1.15
V
Base-Emitter On
Voltage
IC = 4 A
V CE = 1 V
0.89
1
V
DC Current Gain
IC
IC
IC
IC
V CE = 1 V
V CE = 1 V
V CE = 1 V
V CE = 1 V
=
=
=
=
=
=
=
=
10 mA
2A
5A
10 A
Transition frequency
V CE = 10 V
I C = 100 mA
Collector-Base
Capacitance
V CB = 10 V
IC = 1 A
I B1 = - I B2 = 0.1 A
RESISTIVE LOAD
Turn- on Time
Storage Time
Fall Time
∗ Pulsed: Pulse duration = 300µs, duty cycle = 1.5 %
2/8
100 mA
1A
2A
5A
150
150
90
30
300
270
140
50
350
130
MHz
f = 1 MHz
47
pF
V CC = 10 V
50
1.35
120
ns
µs
ns
STSA851
Derating Curve
DC Current Gain
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
3/8
STSA851
Switching Times Resistive Load
Switching Times Resistive Load
Switching Times Resistive Load
Switching Times Inductive Load
Switching Times Inductive Load
4/8
STSA851
Figure 1: Resistive Load Switching Test Circuit.
1) Fast electronic switch
2) Non-inductive Resistor
5/8
STSA851
TO-92 MECHANICAL DATA
mm
DIM.
MIN.
6/8
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
4.32
4.95
0.170
0.195
b
0.36
0.51
0.014
0.020
D
4.45
4.95
0.175
0.194
E
3.30
3.94
0.130
0.155
e
2.41
2.67
0.095
0.105
e1
1.14
1.40
0.045
0.055
L
12.70
15.49
0.500
0.609
R
2.16
2.41
0.085
0.094
S1
1.14
1.52
0.045
0.059
W
0.41
0.56
0.016
0.022
V
4 degree
6 degree
4 degree
6 degree
STSA851
TO-92 AMMOPACK SHIPMENT (Suffix"-AP") MECHANICAL DATA
DIM.
A1
T
T1
T2
d
P0
P2
F1,F2
delta H
W
W0
W1
W2
H
H0
H1
D0
t
L
I1
delta P
MIN.
mm
TYP.
12.50
5.65
2.44
-2.00
17.50
5.70
8.50
18.00
6.00
9.00
18.50
15.50
16.00
3.80
4.00
3.00
-1.00
12.70
6.35
2.54
MAX.
4.80
3.80
1.60
2.30
0.48
12.90
7.05
2.94
2.00
19.00
6.30
9.25
0.50
20.50
16.50
25.00
4.20
0.90
11.00
1.00
MIN.
inch
TYP.
0.492
0.222
0.096
-0.079
0.689
0.224
0.335
0.709
0.236
0.354
0.728
0.610
0.630
0.150
0.157
0.118
-0.039
0.500
0.250
0.100
MAX.
0.189
0.150
0.063
0.091
0.019
0.508
0.278
0.116
0.079
0.748
0.248
0.364
0.020
0.807
0.650
0.984
0.165
0.035
0.433
0.039
7/8
STSA851
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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All other names are the property of their respective owners.
© 2003 STMicroelectronics – All Rights reserved
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