STTH12003TV HIGH FREQUENCY SECONDARY RECTIFIER MAJOR PRODUCT CHARACTERISTICS IF(AV) 2 x 60 A VRRM 300 V Tj (max) 150 °C VF (max) 1V trr (max) 70 ns A1 K1 A2 K2 K1 A1 K2 FEATURES AND BENEFITS A2 COMBINES HIGHEST RECOVERY AND REVERSE VOLTAGE PERFORMANCE ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY INSULATED PACKAGE: ISOTOP Insulated voltage: 2500 VRMS Capacitance: < 45 pF LOW INDUCTANCE AND LOW CAPACITANCE ALLOW SIMPLIFIED LAYOUT ISOTOP DESCRIPTION Dual rectifiers suited for Switch Mode Power Supply and high frequency DC to DC converters. Packaged in ISOTOP, this device is intended for use in low voltage, high frequency inverters, free wheeling operation, welding equipment and telecom power supplies. ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) Parameter Repetitive peak reverse voltage RMS forward current IF(AV) Average forward current Tc = 85°C δ = 0.5 IFSM Surge non repetitive forward current tp = 10 ms sinusoidal IRSM Non repetitive peak reverse current tp = 100 µs square Tstg Storage temperature range Tj Maximum operating junction temperature Per diode Per device Value 300 Unit V 150 A 60 120 A 600 A 5 A - 55 to + 150 °C 150 °C ISOTOP is a registered trademark of STMicroelectronics October 1999 - Ed: 4D 1/5 STTH12003TV THERMAL RESISTANCES Symbol Rth (j-c) Parameter Junction to case Rth (c) Per diode Total Value 0.8 0.45 Coupling 0.1 Unit °C/W When the diodes 1 and 2 are used simultaneously: ∆Tj (diode 1) = P (diode 1) x Rth(j-c) (per diode) + P (diode 2) x Rth(C) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * VF ** Parameter Tests conditions Reverse leakage current VR = 300 V Forward voltage drop IF = 60 A Min. Typ. Tj = 25°C 0.12 Tj = 125°C Tj = 25°C Tj = 125°C Max. Unit 120 µA 1.2 mA 1.25 V 0.85 1 Typ. Max. Unit ns Pulse test : * tp = 5 ms, δ < 2 % ** tp = 380 µs, δ < 2% To evaluate the maximum conduction losses use the following equation: P = 0.75 x IF(AV) + 0.0042 x IF2(RMS) RECOVERY CHARACTERISTICS Symbol trr Tests conditions Irr = 0.25 A IR = 1A Tj = 25°C 55 dIF/dt = - 50 A/µs VR = 30 V Tj = 25°C 70 Tj = 25°C 600 ns VFR = 1.1 x VF max. Tj = 25°C 5 V Vcc = 200 V IF = 60 A dIF/dt = 200 A/µs Tj = 125°C IF = 0.5 A IF = 1 A tfr VFP Sfactor IRM 2/5 Min. IF = 60 A dIF/dt = 200 A/µs 0.3 14 A STTH12003TV Fig. 1: Conduction losses versus average current (per diode). Fig. 2: Forward voltage drop versus forward current (per diode). P1(W) 90 80 70 60 50 40 30 20 10 0 IFM(A) δ = 0.1 δ = 0.2 600 δ = 0.5 Tj=125°C Typical values δ = 0.05 Tj=25°C Maximum values 100 δ=1 Tj=125°C Maximum values 10 T 80 VFM(V) 1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 Fig. 3: Relative variation of thermal impedance junction to case versus pulse duration. Fig. 4: Peak reverse recovery current versus dIF/dt (90% confidence, per diode). IF(av) (A) 0 10 20 30 40 δ=tp/T 50 60 tp 70 Zth(j-c)/Rth(j-c) IRM(A) 1.0 30 0.8 25 VR=200V Tj=125 °C IF=2*IF(a v) IF=IF(av) 0.6 20 δ = 0.5 15 0.4 IF=0.5*IF(a v) δ = 0.2 10 δ = 0.1 T 0.2 5 Single pulse 0.0 1E-3 tp(s) 1E-2 1E-1 δ=tp/T 1E+0 dIF/dt(A/µs) tp 1E+1 Fig. 5: Reverse recovery time versus dIF/dt (90% confidence, per diode). 0 0 Fig. 6: Softness factor (tb/ta) versus dIF/dt (typical values, per diode). S factor trr(ns) 200 180 160 140 120 100 80 60 40 20 0 50 100 150 200 250 300 350 400 450 500 0.6 VR=200V Tj=125 °C VR=200V Tj=125 °C 0.5 IF=2*IF(av) 0.4 IF=IF(av) 0.3 0.2 IF=0.5*IF(a v) 0.1 dIF/dt(A/µs) dIF/dt(A/µs) 0 50 100 150 200 250 300 350 400 450 500 0.0 0 50 100 150 200 250 300 350 400 450 500 3/5 STTH12003TV Fig. 7: Relative variation of dynamic parameters versus junction temperature (reference:Tj = 125°C). VFP(V) 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 25 10 IF=IF(av) Tj=125 °C S factor 8 6 4 IRM 2 Tj(°C) 50 75 dIF/dt(A/µs) 100 125 Fig. 9: Forward recovery time versus dIF/dt (90% confidence, per diode). tfr(ns) 500 IF=IF(av) VFR=1.1*VFmax Tj=125 °C 400 300 200 100 dIF/dt(A/µs) 0 4/5 0 Fig. 8: Transient peak forward voltage versus dIF/dt (90% confidence, per diode). 50 100 150 200 250 300 350 400 450 500 0 0 50 100 150 200 250 300 350 400 450 500 STTH12003TV PACKAGE MECHANICAL DATA ISOTOP DIMENSIONS Ordering code Marking STTH12003TV1 STTH12003TV Package ISOTOP REF. Millimeters Inches A A1 B C C2 D D1 E E1 E2 G G1 G2 F F1 P P1 S Min. Max. 11.80 12.20 8.90 9.10 7.8 8.20 0.75 0.85 1.95 2.05 37.80 38.20 31.50 31.70 25.15 25.50 23.85 24.15 24.80 typ. 14.90 15.10 12.60 12.80 3.50 4.30 4.10 4.30 4.60 5.00 4.00 4.30 4.00 4.40 30.10 30.30 Min. Max. 0.465 0.480 0.350 0.358 0.307 0.323 0.030 0.033 0.077 0.081 1.488 1.504 1.240 1.248 0.990 1.004 0.939 0.951 0.976 typ. 0.587 0.594 0.496 0.504 0.138 0.169 0.161 0.169 0.181 0.197 0.157 0.69 0.157 0.173 1.185 1.193 Weight 27g without screws Base qty 10 with screws Delivery mode Tube Cooling method: by conduction (C) Recommended torque value: 1.3 N.m. Maximum torque value: 1.5 N.m. Epoxy meets UL 94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5