BYV54V BYV541V HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES FEATURES n n n n n n SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED : Insulating voltage = 2500 VRMS Capacitance = 45 pF K2 A2 A2 K1 K1 A1 K2 A1 BYV541V-200 BYV54V-200 DESCRIPTION Dual rectifier suited for switchmode power supply and high frequency DC to DC converters. Packaged in ISOTOPTM this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. ISOTOP (Plastic) ABSOLUTE MAXIMUM RATINGS Symbol IF(RMS) Parameter RMS forward current Value Unit Per diode 100 A Per diode 50 A 1000 A - 40 to + 150 - 40 to + 150 °C °C IF(AV) Average forward current δ = 0.5 Tc=90°C IFSM Surge non repetitive forward current tp=10ms Per diode sinusoidal Tstg Tj Storage and junction temperature range Symbol Parameter VRRM Repetitive peak reverse voltage BYV54V / BYV541V Unit 200 V ISOTOP is a trademark of STMicroelectronics. May 2000 - Ed : 2E 1/5 BYV54V / BYV541V THERMAL RESISTANCE Symbol Rth (j-c) Rth (c) Parameter Junction to case Value Unit Per diode 1.2 °C/W Total 0.85 °C/W 0.1 Coupling When the diodes 1 and 2 are used simultaneously : Tj-Tc (diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) ELECTRICAL CHARACTERISTICS (Per diode) STATIC CHARACTERISTICS Symbol IR * Test Conditions Tj = 25°C Min. Typ. VR = VRRM Tj = 100°C VF ** Max. Unit 50 µA 5 mA V Tj = 125°C IF = 50 A 0.85 Tj = 125°C IF = 100 A 1.00 Tj = 25°C IF = 100 A 1.15 Pulse test : * tp = 5 ms, duty cycle < 2 % ** tp = 380 µs, duty cycle < 2 % RECOVERY CHARACTERISTICS Symbol trr Test Conditions Tj = 25°C Min. Typ. Max. Unit ns IF = 0.5A IR = 1A Irr = 0.25A 40 IF = 1A VR = 30V dIF/dt = -50A/µs 60 tfr Tj = 25°C IF = 1A VFR = 1.1 x VF tr = 5 ns 10 ns VFP Tj = 25°C IF = 1A tr = 5 ns 1.5 V 2/5 BYV54V / BYV541V Fig.1 : Average forward power dissipation versus average forward current. 45 P F(av)(W) Fig.2 : Peak current versus form factor. 1000 40 =0.1 35 T =1 =0.5 =0.2 IM(A) P=30W 800 I =0.05 30 =tp/T 600 25 20 tp P=15W 400 T M 15 P=45W 10 200 5 I F(av)(A) 0 0 =tp/T P=60W tp 50 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Fig.3 : Forward voltage drop versus forward current (maximum values). Fig.4 : Relative variation of thermal impedance junction to case versus pulse duration. 5 10 15 20 25 30 35 40 45 1.0 VFM(V) K Zth(j-c) (tp. ) K = Rth(j-c) 1.8 1.6 Tj=125 oC 1.4 =0 . 5 0.5 1.2 =0 . 2 1.0 =0 . 1 0.8 0.6 T 0.2 Single pulse 0.4 0.2 0.0 IFM(A) 1 10 100 500 Fig.5 : Non repetitive surge peak forward current versus overload duration. 400 IM(A) =t p/T tp(s) 0.1 1.0E-03 1.0E-02 1.0E-01 1. 0E+0 0 Fig.6 : Average current versus temperature. (duty cycle : 0.5) 60 tp ambient IF(av)(A) 50 Rth(j-a)=Rth(j-c) 300 40 200 Tc=25 oC 30 Tc=50 o C 20 =0.5 100 IM Tc=90 o C t 0 0.001 10 t(s) =0.5 0.01 T =tp/T 0.1 1 0 0 20 Tamb(o C) tp 40 60 80 100 120 140 160 3/5 BYV54V / BYV541V Fig.7 : Junction capacitance versus reverse voltage applied (Typical values). 420 C(pF) QRR(nC) F=1Mhz Tj=25 oC 400 380 360 340 320 300 280 260 240 1 Fig.8 : Recovery charges versus dIF/dt. VR(V) 10 100 20 0 Fig.9 : Peak reverse current versus dIF/dt. 1 20 110 90%CONFIDENCE 1 00 IF=IF(av) Tj=100 OC 90 80 70 60 Tj=25 O C 50 40 30 20 10 dIF/dt(A/us) 0 1 10 Fig.10 : Dynamic parameters versus junction temperature. QRR;IRM[Tj]/QRR;IRM[Tj=125oC] IRM(A) 4.0 3.6 90%CONFIDENCE IF=IF(av) 3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0.0 20 1 4/5 1 00 1.50 1.25 Tj=100 O C 1.00 IRM 0.75 QRR 0.50 Tj=25 O C 0.25 dIF/dt(A/us) 10 100 0.00 0 Tj( oC) 25 50 75 100 125 150 BYV54V / BYV541V PACKAGE MECHANICAL DATA ISOTOP DIMENSIONS n n n n REF. Millimeters Inches A A1 B C C2 D D1 E E1 E2 G G1 G2 F F1 P P1 S Min. Max. 11.80 12.20 8.90 9.10 7.8 8.20 0.75 0.85 1.95 2.05 37.80 38.20 31.50 31.70 25.15 25.50 23.85 24.15 24.80 typ. 14.90 15.10 12.60 12.80 3.50 4.30 4.10 4.30 4.60 5.00 4.00 4.30 4.00 4.40 30.10 30.30 Min. Max. 0.465 0.480 0.350 0.358 0.307 0.323 0.030 0.033 0.077 0.081 1.488 1.504 1.240 1.248 0.990 1.004 0.939 0.951 0.976 typ. 0.587 0.594 0.496 0.504 0.138 0.169 0.161 0.169 0.181 0.197 0.157 0.69 0.157 0.173 1.185 1.193 Marking : Type number Cooling method : C Weight : 27 g Epoxy meets UL94, V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 2000 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5