STMICROELECTRONICS STU16NB50

STU16NB50

N-CHANNEL 500V - 0.28Ω - 15.6A-Max220
PowerMESH MOSFET
TYPE
ST U16NB50
■
■
■
■
■
■
V DSS
R DS(on)
ID
500 V
< 0.33 Ω
15.6 A
TYPICAL RDS(on) = 0.28 Ω
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
± 30V GATE TO SOURCE VOLTAGE RATING
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
1
2
3
Max220
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
SWITCH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
■
ABSOLUTE MAXIMUM RATINGS
Symbol
V DS
V DGR
V GS
Parameter
Value
Un it
Drain-source Voltage (V GS = 0)
500
V
Drain- gate Voltage (R GS = 20 kΩ)
500
V
± 30
V
G ate-source Voltage
o
ID
Drain Current (continuous) at Tc = 25 C
15.6
A
ID
Drain Current (continuous) at Tc = 100 oC
9.8
A
Drain Current (pulsed)
62
A
I DM (•)
P tot
dv/dt( 1 )
Ts tg
Tj
o
T otal Dissipation at Tc = 25 C
160
W
Derating Factor
1.28
W /o C
4.5
V/ns
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
September 1999
-65 to 150
o
C
150
o
C
( 1) ISD ≤16A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1/6
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
STU16NB50
THERMAL DATA
R thj -case
Rthj -amb
R thc-sink
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
o
0.78
62.5
0.5
300
C/W
oC/W
o
C/W
o
C
Max Valu e
Unit
AVALANCHE CHARACTERISTICS
Symbo l
Parameter
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
15.6
A
E AS
Single Pulse Avalanche Energy
o
(starting Tj = 25 C, I D = IAR , VDD = 50 V)
850
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbo l
V (BR)DSS
Parameter
Drain-source
Breakdown Voltage
Test Con ditions
Min.
o
I D = 250 µA
V GS = 0 @ 100 C
I DSS
V DS = Max Rating
Zero G ate Voltage
Drain Current (V GS = 0) V DS = Max Rating
IGSS
Gate-body Leakage
Current (VDS = 0)
T yp.
Max.
500
Unit
V
T c = 125 oC
V GS = ± 30 V
1
50
µA
µA
± 100
nA
ON (∗)
Symbo l
Parameter
Test Con ditions
ID = 250 µA
V GS(th)
Gate Threshold
Voltage
R DS(on)
Static Drain-source O n V GS = 10V
Resistance
I D(o n)
V DS = V GS
Min.
T yp.
Max.
Unit
3
4
5
V
0.28
0.33
Ω
ID =7.8 A
15.6
On State Drain Current V DS > ID(o n) x R DS(on )ma x
V GS = 10 V
A
DYNAMIC
Symbo l
g f s (∗)
C iss
C os s
C rss
2/6
Parameter
Test Con ditions
Forward
Transconductance
V DS > ID(o n) x R DS(on )ma x
Input Capacitance
Output Capacitance
Reverse T ransfer
Capacitance
V DS = 25 V
f = 1 MHz
I D =7.8 A
V GS = 0
Min.
T yp.
Max.
9
Unit
S
2850
400
42
3710
520
55
pF
pF
pF
STU16NB50
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
T yp.
Max.
Unit
t d(on)
tr
Turn-on Time
Rise Time
Parameter
V DD = 250 V
R G = 4.7 Ω
Test Con ditions
ID = 7.8 A
VGS = 10 V
Min.
30
15
42
21
ns
ns
Qg
Q gs
Q gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 400 V
I D =15.6 A V GS = 10 V
67
20
30
88
nC
nC
nC
T yp.
Max.
Unit
20
15
35
26
21
49
ns
ns
ns
T yp.
Max.
Unit
15.6
62
A
A
SWITCHING OFF
Symbo l
tr (Voff)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Con ditions
Min.
V DD = 400 V ID = 15.6 A
R G = 4.7 Ω V GS = 10 V
SOURCE DRAIN DIODE
Symbo l
ISD
I SDM (•)
V SD (∗)
t rr
Q rr
I RRM
Parameter
Test Con ditions
Min.
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
I SD = 15.6 A
V GS = 0
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I SD = 15.6 A
V DD = 100 V
di/dt = 100 A/µs
T j = 150 o C
1.6
V
600
ns
6.8
µC
22.5
A
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
3/6
STU16NB50
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
4/6
STU16NB50
Max220 MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.3
4.6
0.169
0.181
A1
2.2
2.4
0.087
0.094
A2
2.9
3.1
0.114
0.122
b
0.7
0.93
0.027
0.036
b1
1.25
1.4
0.049
0.055
b2
1.2
1.38
0.047
0.054
c
0.45
0.6
0.18
0.023
D
15.9
16.3
0.626
0.641
D1
9
9.35
0.354
0.368
D2
0.8
1.2
0.031
0.047
D3
2.8
3.2
0.110
0.126
e
2.44
2.64
0.096
0.104
E
10.05
10.35
0.396
0.407
L
13.2
13.6
0.520
0.535
L1
3
3.4
0.118
0.133
D1
D2
A1
A2
A
C
D3
b
b2
b1
D
e
E
L1
L
P011R
5/6
STU16NB50
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibil ity for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specific ation mentioned in this publication are
subjec t to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
 1999 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
6/6
http://www.st.com
.