STW6NA80 STH6NA80FI N - CHANNEL 800V - 1.8Ω - 5.4A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR TYPE STW 6NA80 STH6NA80FI ■ ■ ■ ■ ■ ■ ■ V DSS R DS(on) ID 800 V 800 V < 2.2 Ω < 2.2 Ω 5.4 A 3.4 A TYPICAL RDS(on) = 1.8 Ω AVALANCE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE VERY HIGH CURRENT CAPABILITY APPLICATION ORIENTED CHARACTERIZATION 3 3 2 2 1 1 TO-247 APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SOLENOID AND RELAY DRIVERS ■ REGULATORS ■ DC-DC & DC-AC CONVERTERS ■ MOTOR CONTROL, AUDIO AMPLIFIERS ■ AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) ISOWATT218 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value ST W6NA80 V DS V DGR V GS Un it STH6NA80F I Drain-source Voltage (V GS = 0) 800 V Drain- gate Voltage (R GS = 20 kΩ) 800 V ± 30 V G ate-source Voltage o ID Drain Current (continuous) at Tc = 25 C 5.4 3.4 A ID Drain Current (continuous) at Tc = 100 oC 3.4 2.1 A Drain Current (pulsed) 22 22 A T otal Dissipation at Tc = 25 C 150 60 W Derating Factor 1.2 0.48 W /o C Insulation W ithstand Voltage (DC) 4000 I DM (•) P tot V ISO Ts tg Tj o Storage Temperature Max. Operating Junction Temperature V -65 to 150 o C 150 o C (•) Pulse width limited by safe operating area October 1998 1/10 STW6NA80-STH6NA80FI THERMAL DATA R thj -case Thermal Resistance Junction-case R thj -amb R thc-sink Tl Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose Max TO-247 ISOW AT T218 0.83 2.08 30 0.1 300 o C/W o C/W C/W o C o AVALANCHE CHARACTERISTICS Symbo l Max Valu e Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, δ < 1%) Parameter 5.4 A E AS Single Pulse Avalanche Energy (starting Tj = 25 o C, I D = IAR , VDD = 50 V) 150 mJ E AR Repetitive Avalanche Energy (pulse width limited by Tj max, δ < 1%) 5.8 mJ IAR Avalanche Current, Repetitive or Not-Repetitive o (T c = 100 C, pulse width limited by T j max, δ < 1%) 3.4 A ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbo l V (BR)DSS Parameter Drain-source Breakdown Voltage Test Con ditions I D = 250 µA Min. V DS = Max Rating Zero G ate Voltage Drain Current (V GS = 0) V DS = Max Rating x 0.8 IGSS Gate-body Leakage Current (VDS = 0) Max. 800 V GS = 0 I DSS T yp. Unit V Tc = 100 o C V GS = ± 30 V 25 50 µA µA ± 100 nA ON (∗) Symbo l Parameter Test Con ditions ID = 250 µA V GS(th) Gate Threshold Voltage R DS(on) Static Drain-source O n V GS = 10 V ID = 3 A Resistance V GS = 10 V I D = 3 A I D(o n) V DS = V GS Min. T yp. Max. Unit 2.25 3 3.75 V 1.8 2.2 4.4 Ω Ω o T c = 100 C 5.4 On State Drain Current V DS > ID(o n) x R DS(on )ma x V GS = 10 V A DYNAMIC Symbo l g f s (∗) C iss C os s C rss 2/10 Parameter Test Con ditions Forward Transconductance V DS > ID(o n) x R DS(on )ma x Input Capacitance Output Capacitance Reverse T ransfer Capacitance V DS = 25 V f = 1 MHz ID = 3 A V GS = 0 Min. T yp. 3 5.5 1250 140 35 Max. Unit S 1700 190 50 pF pF pF STW6NA80-STH6NA80FI ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbo l t d(on) tr (di/dt) on Qg Q gs Q gd T yp. Max. Unit Turn-on Time Rise Time Parameter V DD = 400 V ID = 3 A VGS = 10 V R G = 4.7 Ω (see test circuit, figure 3) Test Con ditions 40 100 55 135 ns ns Turn-on Current Slope V DD = 640 V ID = 6 A V GS = 10 V R G = 47 Ω (see test circuit, figure 5) 180 Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 640 V ID = 6 A Min. V GS = 10 V A/µs 55 8 24 75 nC nC nC T yp. Max. Unit 75 25 110 100 35 150 ns ns ns T yp. Max. Unit 5.4 22 A A 1.6 V SWITCHING OFF Symbo l tr (Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Con ditions Min. V DD = 640 V ID = 6 A R G = 47 Ω VGS = 10 V (see test circuit, figure 5) SOURCE DRAIN DIODE Symbo l Parameter Test Con ditions ISD I SDM (•) Source-drain Current Source-drain Current (pulsed) V SD (∗) Forward On Voltage I SD = 6 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 6 A di/dt = 100 A/µs o T j = 150 C V DD = 100 V (see test circuit, figure 5) t rr Q rr I RRM Min. V GS = 0 800 ns 15.2 µC 38 A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area Safe Operating Area for TO-247 Safe Operating Area for ISOWATT218 3/10 STW6NA80-STH6NA80FI Thermal Impedance for TO-247 Thermal Impedance for ISOWATT218 Derating Curve for TO-247 Derating Curve for ISOWATT218 Output Characteristics Transfer Characteristics 4/10 STW6NA80-STH6NA80FI Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature 5/10 STW6NA80-STH6NA80FI Turn-on Current Slope Turn-off Drain-source Voltage Slope Cross-over Time Switching Safe Operating Area Accidental Overload Area Source-drain Diode Forward Characteristics 6/10 STW6NA80-STH6NA80FI Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 7/10 STW6NA80-STH6NA80FI TO-247 MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 4.7 5.3 0.185 0.209 D 2.2 2.6 0.087 0.102 E 0.4 0.8 0.016 0.031 F 1 1.4 0.039 0.055 F3 2 2.4 0.079 0.094 F4 3 3.4 0.118 0.134 G 10.9 0.429 H 15.3 15.9 0.602 0.626 L 19.7 20.3 0.776 0.779 L3 14.2 14.8 0.559 0.413 L4 34.6 1.362 L5 5.5 0.217 0.582 M 2 3 0.079 0.118 Dia 3.55 3.65 0.140 0.144 P025P 8/10 STW6NA80-STH6NA80FI ISOWATT218 MECHANICAL DATA mm DIM. MIN. inch MAX. MIN. A 5.35 TYP. 5.65 0.210 TYP. MAX. 0.222 C 3.3 3.8 0.130 0.149 D 2.9 3.1 0.114 0.122 D1 1.88 2.08 0.074 0.081 E 0.75 1 0.029 0.039 F 1.05 1.25 0.041 0.049 G 10.8 11.2 0.425 0.441 H 15.8 16.2 0.622 0.637 L1 20.8 21.2 0.818 0.834 L2 19.1 19.9 0.752 0.783 L3 22.8 23.6 0.897 0.929 L4 40.5 42.5 1.594 1.673 L5 4.85 5.25 0.190 0.206 L6 20.25 20.75 0.797 0.817 M 3.5 3.7 0.137 0.145 N 2.1 2.3 0.082 0.090 U 4.6 0.181 L3 C D1 D A E N L2 L6 F L5 H G U M 1 2 3 L1 L4 P025C 9/10 STW6NA80-STH6NA80FI Information furnished is believed to be accurate and reliable. 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