STY60NA20 N - CHANNEL 200V - 0.030Ω - 60 A - Max247 FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STY60NA20 ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS(on) ID 200 V < 0.032 Ω 60 A TYPICAL RDS(on) = 0.030 Ω EFFICIENT AND RELIABLE MOUNTING THROUGH CLIP ± 30V GATE TO SOURCE VOLTAGE RATING REPETITIVE AVALANCHE TESTED LOW INTRINSIC CAPACITANCE 100% AVALANCHE TESTED GATE CHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD 1 2 3 Max247TM DESCRIPTION TM T he Max247 package is a new high volume power package exibiting the same footprint as the industr y standard T O-247, but designed to accomodate much larger silicon chips, normally supplied in bigger packages such as T O-264. The increased die capacity makes the device ideal to reduce component count in multiple paralleled designs and save board space with respect to larger packages. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLIES (SMPS) ■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES (UPS) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Uni t V DS Drain-source Voltage (V GS = 0) 200 V VDGR Drain- gate Voltage (R GS = 20 kΩ) 200 V V GS Gate-source Voltage ± 30 V ID Drain Current (continuous) at T c = 25 oC 60 A ID o Drain Current (continuous) at T c = 100 C 40 A Drain Current (pulsed) 240 A I DM (•) P t ot T stg Tj o Total Dissipation at T c = 25 C 300 W Derating Factor 2.4 W/ C St orage Temperature Max. Operating Junction T emperature o -65 to 150 o C 150 o C (•) Pulse width limited by safe operating area August 1998 1/4 STY60NA20 THERMAL DATA R t hj-ca se R t hj- amb R thc- si nk Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-Heatsink with Conductive Grease Max Max T yp o 0.42 40 0.05 o C/W C/W AVALANCHE CHARACTERISTICS Symb ol Parameter I AR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max) E AS Single Pulse Avalanche Energy o (starting Tj = 25 C, I D = I AR , V DD = 50 V) Max Valu e Unit 60 A 3000 mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symb ol V (BR)DSS I DSS I GSS Parameter Drain-source Breakdown Voltage Test Cond ition s I D = 250 µA VGS = 0 V DS = Max Rating Zero Gate Voltage Drain Current (V GS = 0) V DS = Max Rating Gate-body Leakage Current (V DS = 0) Min. Typ . Max. 200 Un it V o T c = 100 C V GS = ± 30 V 1 10 µA µA ± 100 nA Max. Un it ON (∗) Symb ol Parameter Test Cond ition s Min. ID = 250 µA V GS(th) Gate T hreshold Voltage V DS = VGS R DS( on) Static Drain-source O n Resistance V GS = 10 V ID(o n) On State Drain Current V DS > I D(on) x R DS(on) max V GS = 10 V 2 ID = 30A Typ . 3 4 V 0.03 0.032 Ω 60 A DYNAMIC Symb ol g fs (∗) C iss C oss C rss 2/4 Parameter Test Cond ition s Forward Transconductance V DS > I D(on) x R DS(on) max Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz Min. I D = 30 A VGS = 0 Typ . Max. 20 Un it S 6000 1400 500 8000 1900 700 pF pF pF STY60NA20 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symb ol Parameter Test Cond ition s t d(on) tr Turn-on T ime Rise Time V DD = 100 V R G = 4.7 Ω Qg Q gs Q gd Total G ate Charge Gate-Source Charge Gate-Drain Charge V DD = 160 V Min. ID = 30 A VGS = 10 V I D = 60 A VGS = 10 V Typ . Max. Un it 40 50 55 70 ns ns 285 40 150 370 nC nC nC Typ . Max. Un it 70 40 110 100 55 150 ns ns ns Typ . Max. Un it 60 240 A A 1.5 V SWITCHING OFF Symb ol t r(Vof f) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over T ime Test Cond ition s V DD = 160 V R G = 4.7 Ω Min. I D = 60 A V GS = 10 V SOURCE DRAIN DIODE Symb ol Parameter Test Cond ition s I SD I SDM (•) Source-drain Current Source-drain Current (pulsed) V SD (∗) Forward O n Voltage I SD = 60 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 60 A V DD = 50 V t rr Q rr I RRM Min. V GS = 0 di/dt = 100 A/µs o T j = 150 C 480 ns 7.5 µC 30 A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area 3/4 STY60NA20 Max247 MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. A 4.70 5.30 A1 2.20 2.60 b 1.00 1.40 b1 2.00 2.40 b2 3.00 3.40 c 0.40 0.80 D 19.70 20.30 e 5.35 5.55 E 15.30 15.90 L 14.20 15.20 L1 3.70 4.30 MIN. TYP. MAX. P025Q 4/4 STY60NA20 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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