STP6NA60FP N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STP6NA60F P ■ ■ ■ ■ ■ ■ ■ V DSS R DS(on) ID 600 V < 1.2 Ω 3.9 A TYPICAL RDS(on) = 1 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD 3 1 DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optmized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. 2 TO-220FP INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLIES (SMPS) ■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symbol V DS VDGR V GS ID ID I DM (•) P t ot V ISO T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 kΩ) Gate-source Voltage Drain Current (continuous) at T c = 25 o C o Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at Tc = 25 o C Derating Factor Insulation W ithstand Voltage (DC) St orage Temperature Max. Operating Junction Temperature Valu e 600 600 ± 30 3.9 2.6 26 40 0.32 2000 -65 to 150 150 Unit V V V A A A W o W/ C V o C o C (•) Pulse width limited by safe operating area October 1997 1/5 STP6NA60FP THERMAL DATA R t hj-ca se R t hj- amb R thc- si nk Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose o 3.12 62.5 0.5 300 C/W oC/W o C/W o C Max Valu e Unit AVALANCHE CHARACTERISTICS Symb ol Parameter I AR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, δ < 1%) 6.5 A E AS Single Pulse Avalanche Energy (starting Tj = 25 o C, I D = IAR , VDD = 50 V) 215 mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symb ol V (BR)DSS Parameter Drain-source Breakdown Voltage Test Cond ition s I D = 250 µA Zero Gate Voltage V DS = Max Rating Drain Current (VGS = 0) V DS = Max Rating I GSS Gate-body Leakage V GS = ± 30 V Current (V DS = 0) Typ . Max. 600 V GS = 0 I DSS Min. Un it V T c = 100 o C 25 250 µA µA ± 100 nA ON (∗) Symb ol Parameter Test Cond ition s ID = 250 µA V GS(th) Gate Voltage R DS( on) Static Drain-source On V GS = 10V I D = 2.5 A Resistance ID(o n) Threshold V DS = VGS Min. Typ . Max. Un it 2.25 3 3.75 V 1 1.2 Ω 6.5 On State Drain Current V DS > I D(on) x R DS(on) max V GS = 10 V A DYNAMIC Symb ol g fs (∗) C iss C oss C rss 2/5 Parameter Test Cond ition s Forward Transconductance V DS > I D(on) x R DS(on) max Input Capacitance Output Capacitance ReverseTransfer Capacitance V DS = 25 V f = 1 MHz ID = 3 A VGS = 0 Min. Typ . 3.5 5.6 1150 155 40 Max. Un it S 1550 210 55 pF pF pF STP6NA60FP ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symb ol Parameter Test Cond ition s t d(on) tr Turn-on Time Rise Time V DD = 300 V ID V GS = 10 V R G = 47 Ω Qg Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 480 V ID = 3 A Min. = 3 A V GS = 10 V Typ . Max. Un it 35 90 55 125 ns ns 54 8 23 75 nC nC nC Typ . Max. Un it 80 20 115 110 30 155 ns ns ns Typ . Max. Un it 6.5 26 A A 1.6 V SWITCHING OFF Symb ol t r(Vof f) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Cond ition s Min. V DD = 480 V I D = 6 A R G = 47 Ω VGS = 10 V (see test circuit, figure 5) SOURCE DRAIN DIODE Symb ol Parameter I SD I SDM (•) Source-drain Current Source-drain Current (pulsed) V SD (∗) Forward On Voltage t rr Q rr I RRM Reverse Time Reverse Charge Reverse Current Test Cond ition s I SD = 6.5 A Min. V GS = 0 Recovery I SD = 6 A di/dt = 100 A/µs o T j = 150 C V DD = 100 V Recovery (see circuit, figure 5) 600 ns 9 µC Recovery 30 A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area 3/5 STP6NA60FP TO-220FP MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L3 L3 L6 F F1 L7 F2 H G G1 ¯ 1 2 3 L2 4/5 L4 STP6NA60FP Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada- China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . .. 5/5