TEMIC ND2012L

ND2012L/2020L
N-Channel Depletion-Mode MOSFET Transistors
Product Summary
Part Number
V(BR)DSV Min (V)
ND2012L
rDS(on) Max ()
VGS(off) (V)
ID (A)
12
–1.5 to –4
0.16
20
–0.5 to –2.5
0.132
200
ND2020L
Features
Benefits
Applications
High Breakdown Voltage: 220 V
Normally “On” Low rDS Switch: 9 Low Input and Output Leakage
Low-Power Drive Requirement
Low Input Capacitance
Full-Voltage Operation
Low Offset Voltage
Low Error Voltage
Easily Driven Without Buffer
High-Speed Switching
Normally “On” Switching Circuits
Current Sources/Limiters
Power Supply, Converter Circuits
Solid-State Relays
Telecom Switches
TO-226AA
(TO-92)
S
1
G
2
D
3
Top View
Absolute Maximum Ratings (TA = 25C Unless Otherwise Noted)
Parameter
Symbol
ND2012L
ND2020L
Drain-Source Voltage
VDS
200
200
Gate-Source Voltage
VGS
30
30
0.16
0.132
0.1
0.083
0.8
0.8
0.8
0.8
0.32
0.32
156
156
Continuous Drain Current (TJ = 150C)
Pulsed Drain
TA= 25C
TA= 100C
Currenta
Power Dissipation
ID
IDM
TA= 25C
TA= 100C
Maximum Junction-to-Ambient
Operating Junction and Storage Temperature Range
PD
RthJA
TJ, Tstg
–55 to 150
Unit
V
A
W
C/W
C
Notes
a. Pulse width limited by maximum junction temperature.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70197.
Applications information may also be obtained via FaxBack, request document #70612.
Siliconix
S-52426—Rev. C, 14-Apr-97
1
ND2012L/2020L
Specificationsa
Limits
ND2012L
Parameter
Symbol
Test Conditions
Typb Min
Max
ND2020L
Min
Max
Unit
Static
Drain Source Breakdown Voltage
Drain-Source
Gate-Source Cutoff Voltage
Gate-Body Leakage
V(BR)DSV
VGS(off)
IGSS
VGS = –8 V, ID = 10 mA
220
VGS = –5 V, ID = 10 mA
220
VDS = 5 V, ID = 10 mA
200
–1.5
VDS = 0 V, VGS = "20 V
= VDS = 160 V, VGS = –8 V
Drain Cutoff Current
ID(off)
–4
–0.5
Drain-Source
On-Resistancec
IDSS
rDS(on)
"10
"50
"50
Common Source Output Conductancec
gfs
200
VDS = 160 V, VGS = –5 V
1
gos
mA
200
VDS = 10 V, VGS = 0 V
300
VGS = 2 V, ID = 20 mA
7
VGS = 0 V, ID = 20 mA
8
12
20
12.6
30
50
VDS = 77.5
5 V
V, ID = 20 mA
nA
1
= = Forward Transconductance c
–2.5
"10
= Drain-Saturation Currentc
V
200
30
30
mA
W
55
mS
75
mS
Dynamic
Input Capacitance
Ciss
35
100
100
Output Capacitance
Coss
10
20
20
Reverse Transfer Capacitance
Crss
2
5
5
VDS = 25 V, VGS = –5 V, f = 1 MHz
pF
Switchingd
Turn-On Time
Turn-Off Time
td(on)
tr
td(off)
20
25 W
^ 20 W
tf
Notes
a. TA = 25C unless otherwise noted.
b. For DESIGN AID ONLY, not subject to production testing.
c. Pulse test: PW v300 ms duty cycle v2%.
d. Switching time is essentially independent of operating temperature.
2
20
ns
10
10
VDDQ20
Siliconix
S-52426—Rev. C, 14-Apr-97
ND2012L/2020L
Typical Characteristics (25C Unless Otherwise Noted)
Output Characteristics (ND2012)
100
Output Characteristics (ND2020)
100
–0.5 V
0V
VGS = 5 V
60
–1.5 V
40
–2 V
20
–0.2 V
0.2 V
80
I D – Drain Current (mA)
I D – Drain Current (A)
80
0V
VGS = 2 V
–1 V
–0.4 V
60
–0.6 V
40
–0.8 V
–1.4 V
20
–1 V
–1.2 V
–2.5 V
0
0
0
0.4
0.8
1.2
1.6
2
0
VDS – Drain-to-Source Voltage (V)
1.6
2
Transfer Characteristics (ND2020)
VDS = 10 V
160
25C
I D – Drain Current (mA)
I D – Drain Current (mA)
400
1.2
200
TC = –55C
VDS = 10 V
0.8
VDS – Drain-to-Source Voltage (V)
Transfer Characteristics (ND2012)
500
0.4
125C
300
200
100
120
80
TC = 125C
25C
40
–55C
0
–4.5
–3.5
–2.5
–1.5
–0.5
0
–4.5
0.5
VGS – Gate-Source Voltage (V)
rDS(on)
600
IDSS
10
400
5
200
0
0
–1
–2
–3
–4
VGS(off) – Gate-Source Cutoff Voltage (V)
Siliconix
S-52426—Rev. C, 14-Apr-97
–0.5
0.5
On-Resistance vs. DrainCurrent
25
–5
rDS(on) – On-Resistance ( )
800
15
0
–1.5
VGS = 0 V
I DSS – Drain Current (mA)
rDS(on) – On-Resistance ( )
1000
rDS @ ID = 20 mA, VGS = 0 V
IDSS @ VDS = 7.5 V, VGS = 0 V
20
–2.5
VGS – Gate-Source Voltage (V)
On-Resistance and Drain Current
vs. Gate-Source Cutoff Voltage
25
–3.5
20
15
ND2020
10
ND2012
5
0
10
100
1K
ID – Drain Current (mA)
3
ND2012L/2020L
Typical Characteristics (25C Unless Otherwise Noted) (Cont’d)
Forward Transconductance and Output
Conductance vs. Drain Current
Normalized On-Resistance
vs. Junction Temperature
g fs – Forward Transconductance (mS)
rDS(on) – Drain-Source On-Resistance
(Normalized)
1.75
1.50
1.25
1.00
0.75
VDS = 7.5 V
Pulse Test
80 ms, 1% Duty Cycle
300
250
500
200
400
150
300
100
200
gfs
50
100
gos
0
0.50
–50
–10
30
70
110
1
150
10
TJ – Junction Temperature (C)
Capacitance
Load Condition Effects on Switching
100
t – Switching Time (ns)
80
60
C iss
40
VDD = 25 V
VGS = 0 to –5 V
RG = 25 W
td(on)
VGS = –5 V
f = 1 MHz
100
0
1K
100
ID – Drain Current (A)
120
C – Capacitance (pF)
600
g os – Output Conductance (m S)
VGS = 0 V
ID = 20 mA
2.00
700
350
2.25
tf
10
td(off)
tr
C oss
20
C rss
0
1
0
10
20
30
40
50
1
10
100
ID – Drain Current (A)
VDS – Drain-to-Source Voltage (V)
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
Notes:
0.05
PDM
0.02
t1
t2
1. Duty Cycle, D =
0.01
t1
t2
2. Per Unit Base = RthJA = 156C/W
3. TJM – TA = PDMZthJA(t)
Single Pulse
0.01
0.1
1
10
100
1K
10 K
t1 – Square Wave Pulse Duration (sec)
4
Siliconix
S-52426—Rev. C, 14-Apr-97