UTC 2SD1898 NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR FEATURES *High VCEO= 80V *High IC= 1A (DC) *Good hFE linearity. *Low VCE(sat) *Complements the 2SB1260. 1 SOT-89 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ) PARAMETER SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Collector Current(DC) Ic Collector Current(PULSE)*1 Icp Collector Power Dissipation*2 Pc Collector Power Dissipation*2 Pc Junction Temperature Tj Storage Temperature TSTG *1 Duty=/1/2,Pw=200ms *2 When mounted on a 40*40*0.7 mm ceramic board. RATING UNIT 100 80 5 1 2 0.5 2 150 -55 ~ +150 V V V A A W W °C °C ELECTRICAL CHARACTERISTICS (Ta=25°C,unless otherwise specified) PARAMETER SYMBOL Collector Base Breakdown Voltage Collector Emitter Breakdown Voltage Emitter Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Transfer Ratio Collector-Emitter Saturation Voltage Transition Frequency Output Capacitance BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) fT Cob TEST CONDITIONS Ic= 50μA MIN TYP MAX 100 80 5 Ic= 1mA IE=50μA VCB=80V, IE=0A VEB=4V , IC=0A VCE=3V,Ic= 0.5A Ic=500mA,IB= 20mA VCE= 10V, IE= -50 mA, f=100MHz VCB= 10V, IE= 0 A, f=1MHz 82 0.15 100 20 1 1 390 0.4 UNIT V V V μA μA V MHz pF CLASSIFICATION OF hFE RANK RANGE UTC P 82-180 Q 120-270 UNISONIC TECHNOLOGIES R 180-390 CO. LTD 1 QW-R208-030,A UTC 2SD1898 NPN EPITAXIAL SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS CURVES Figure 1.Grounded Emitter Propagation Characteristics Figure 2.Grounded Emitter Output Characteristics 1000 Ta=25 ℃ 100 10 1 6mA 1.0 Collector Current: Ic(A) Collector Current: Ic(mA) V CE = 5V Ta=25 ℃ 5mA 4mA 0.8 3mA 0.6 2mA 0.4 1mA 0.2 DC Current Gain:hFE 1000 V CE = 3V 100 V CE = 1V 0 10 100 Collector Current : Ic(mA) ( V) Ta=25℃ Ta=25 ℃ 2.0 1.0 0.5 0.2 0.1 0.02 0.01 1000 20 10 5 2 5 10 20 50 100200 5001000 Emitter Current: -I E (mA) Collector Output Capacitance :Cob (pF) f=1MHz I E=0A I c=0A Emitter Output Capacitance :Cob (pF) Transition Frequency :fT(MHz) 1000 10 100 1000 Collector Current : Ic(mA) Figure 6.CollectorOutput Capacitance vs.Collector-Base Voltage Ta=25 ℃ 50 UTC 0 V CE = 5V 100 2 Ic/IB=10/1 Ta=25 ℃ 200 1 Ic/I B=20/1 0.05 Figure 5. Gain Bandwidth Product vs.Emitter Current 500 IB =0mA 2 4 6 8 10 Collector to Emitter Voltage:V CE (V) Figure 4.Collector-emitter Saturation Voltage vs.Collector Current CE(sat) Figure 3.DC Current Gain vs.Collector Current 0 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Base to Emitter Voltage:V BE (V) Collector Saturation Voltage:V 0.1 0 100 10 1 0.1 0.2 0.5 1 2 5 10 20 50 100 Emitter To Base Voltage :V CB (V) Collector To Base Voltage :V CB (V) UNISONIC TECHNOLOGIES CO. LTD 2 QW-R208-030,A UTC 2SD1898 NPN EPITAXIAL SILICON TRANSISTOR F igure 7.S afe O perating A rea 10 5 W =1 00 s 100m P 0m 200m DC =1 1 500m PW Collector Current:Ic (A) 2 Ic m ax (puls e) m s 50m 20m 10m T a= 25 ℃ 5m 2m S ingle non-repetitive puls e 1m 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1000 C ollec tor to E m itter V oltage:V C E (V ) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO. LTD 3 QW-R208-030,A