PROCESS CP312 Power Transistor NPN - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 70 x 70 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 11.4 x 18.1 MILS Emitter Bonding Pad Area 13.8 x 23.6 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Ti/Ni/Ag - 11,300Å GEOMETRY GROSS DIE PER 4 INCH WAFER 2,230 PRINCIPAL DEVICE TYPES CZT3120 R4 (22-March 2010) w w w. c e n t r a l s e m i . c o m PROCESS CP312 Typical Electrical Characteristics R4 (22-March 2010) w w w. c e n t r a l s e m i . c o m