DIODES ZXTP25020DFL

ZXTP25020DFL
20V, SOT23, PNP low power transistor
Summary
BVCEO > -20V
BVECO > -4V
IC(cont) = 1.5A
VCE(sat) < 85 mV @ 1A
RCE(sat) = 54m⍀
PD = 350mW
Complementary part number ZXTN25020DFL
Description
C
Advanced process capability has been used to achieve high current gain
hold up making this device ideal for applications requiring high pulse
currents.
B
Features
•
High peak current
•
Low saturation voltage
E
Applications
E
•
DC-DC converters
•
MOSFET and IGBT gate driving
C
B
Pinout - top view
Ordering information
Device
ZXTP25020DFLTA
Reel size
(inches)
Tape width
(mm)
Quantity per reel
7
8
3000
Device marking
1F2
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ZXTP25020DFL
Absolute maximum ratings
Parameter
Symbol
Limit
Unit
Collector-base voltage
VCBO
-25
V
Collector-emitter voltage (forward blocking)
VCEO
-20
V
Emitter-collector voltage (reverse blocking)
VECO
-4
V
Emitter-base voltage
VEBO
-7
V
Continuous collector current
IC
-1.5
A
Base current
IB
-500
mA
Peak pulse current
ICM
-6
A
Power dissipation at Tamb =25°C(a)
PD
350
mW
2.8
mW/°C
Tj, Tstg
-55 to 150
°C
Symbol
Limit
Unit
R⍜JA
357
°C/W
Linear derating factor
Operating and storage temperature range
Thermal resistance
Parameter
Junction to ambient(a)
NOTES:
(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
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ZXTP25020DFL
Characteristics
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ZXTP25020DFL
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Collector-base breakdown
voltage
BVCBO
-25
-55
V
IC = -100␮A
Collector-emitter breakdown
voltage (base open)
BVCEO
-20
-45
V
IC = -10mA (*)
Emitter-base breakdown
voltage
BVEBO
-7
-8.3
V
IE = -100␮A
Emitter-collector breakdown
voltage (reverse blocking)
BVECO
-4
-8.5
V
IE = -100uA(*)
Collector cut-off current
ICBO
<-1
Max.
Unit Conditions
-50
nA
VCB = -20V
-20
␮A
VCB = -20V, Tamb= 100°C
Emitter cut-off current
IEBO
<-1
-50
nA
VEB = -5.6V
Collector-emitter saturation
voltage
VCE(sat)
-65
-85
mV
IC = -1A, IB = -100mA(*)
-160
-225
mV
IC = -1A, IB = -10mA(*)
150
-195
mV
IC = -1.5A, IB = -30mA(*)
-210
-275
mV
IC = -2A, IB = -40mA(*)
-215
260
mV
IC = -4A, IB = -400mA(*)
Base-emitter saturation voltage VBE(sat)
-845
-950
mV
IC = -1.5A, IB = -30mA(*)
Base-emitter turn-on voltage
-785
-900
mV
IC = -1.5A, VCE = -2V(*)
300
450
900
160
250
IC = -1.5A, VCE = -2V(*)
60
90
IC = -4A, VCE = -2V(*)
15
IC = -10A, VCE = -2V(*)
VBE(on)
Static forward current transfer hFE
ratio
Transition frequency
fT
290
Output capacitance
Cobo
21
Delay time
t(d)
14.2
Rise time
t(r)
16.3
Storage time
t(s)
186
Fall time
t(f)
32.7
IC = -10mA, VCE = -2V(*)
MHz IC = -50mA, VCE = -10V
f = 50MHz
30
pF
VCB = -10V, f = 1MHz(*)
VCC = -10V. IC = -1A, IB1
= IB2= -50mA.
NOTES:
(*) Measured under pulsed conditions. Pulse width ⱕ300␮s; duty cycle ⱕ2%.
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ZXTP25020DFL
Typical characteristics
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ZXTP25020DFL
Package outline - SOT23
E
e
e1
b
3 leads
L1
D
E1
A
L
A1
Dim.
c
Millimeters
Inches
Dim.
Millimeters
Min.
Max.
Min.
Max.
A
-
1.12
-
0.044
e1
A1
0.01
0.10
0.0004
0.004
E
2.10
2.64
0.083
0.104
b
0.30
0.50
0.012
0.020
E1
1.20
1.40
0.047
0.055
C
0.085
0.120
0.003
0.008
L
0.25
0.62
0.018
0.024
D
2.80
3.04
0.110
0.120
L1
0.45
0.62
0.018
0.024
-
-
-
-
-
e
0.95 NOM
Min.
0.0375 NOM
Max.
Inches
1.90 NOM
Max.
Max.
0.075 NOM
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
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ZXTP25020DFL
Intentionally left blank
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ZXTP25020DFL
Definitions
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or
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Product status key:
“Preview”
Future device intended for production at some point. Samples may be available
“Active”
Product status recommended for new designs
“Last time buy (LTB)”
Device will be discontinued and last time buy period and delivery is in effect
“Not recommended for new designs” Device is still in production to support existing designs and production
“Obsolete”
Production has been discontinued
Datasheet status key:
“Draft version”
This term denotes a very early datasheet version and contains highly provisional information, which
may change in any manner without notice.
“Provisional version”
This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance.
However, changes to the test conditions and specifications may occur, at any time and without notice.
“Issue”
This term denotes an issued datasheet containing finalized specifications. However, changes to
specifications may occur, at any time and without notice.
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© 2007 Published by Zetex Semiconductors plc
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