isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors 2SB539 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -120V(Min) ·High Power Dissipation: PC= 100W(Max)@TC=25℃ ·Complement to Type 2SD287 APPLICATIONS ·Designed for audio frequency power amplifier applications. ·Recommended for 70~80W high-fidelity audio frequency amplifier output stage. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -130 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -10 A ICM Collector Current-Pulse -15 A PC Collector Power Dissipation @TC=25℃ 100 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors 2SB539 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCE(sat) Collector-Emitter Saturation Voltage VBE(sat) MAX UNIT IC= -6A; IB= -0.6A -2.0 V Base-Emitter Saturation Voltage IC= -6A; IB= -0.6A -2.0 V ICBO Collector Cutoff Current VCB= -120V; IE= 0 -0.1 mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -0.1 mA hFE-1 DC Current Gain IC= -2A; VCE= -5V 40 hFE-2 DC Current Gain IC= -5A; VCE= -5V 25 COB Output Capacitance IE= 0; VCB= -10V; f= 1MHz Current-Gain—Bandwidth Product IC= -0.2A; VCE= -10V fT hFE-1 Classifications S R Q 40-80 60-120 100-200 isc Website：www.iscsemi.cn CONDITIONS MIN TYP. B B 200 420 pF 7 MHz