isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB688 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -120V(Min) ·Good Linearity of hFE ·Complement to Type 2SD718 APPLICATIONS ·Audio frequency power amplifier applications ·Recommend for 45-50W audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A IB Base Current-Continuous -0.8 A PC Collector Power Dissipation @ TC=25℃ 80 W TJ Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB688 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -5.0A; IB= -0.5A -2.5 V VBE(on) Base-Emitter On Voltage IC= -5A ; VCE= -5V -1.5 V ICBO Collector Cutoff Current VCB= -120V ; IE= 0 -10 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -10 μA hFE DC Current Gain IC= -1A ; VCE= -5V COB Output Capacitance IE= 0; VCB= -10V; ftest= 1.0MHz 280 pF Current-Gain—Bandwidth Product IC=-1A ; VCE= -5V 10 MHz fT CONDITIONS O 55-110 80-160 isc Website：www.iscsemi.cn TYP. 2 MAX -120 UNIT V B hFE Classifications R MIN 55 160 INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Website：www.iscsemi.cn isc Product Specification 2SB688