FDMS3016DC N-Channel Dual CoolTM PowerTrench® MOSFET 30 V, 49 A, 6.0 mΩ Features Dual Cool General Description TM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. Max rDS(on) = 6.0 mΩ at VGS = 10 V, ID = 12 A Max rDS(on) = 9.0 mΩ at VGS = 4.5 V, ID = 10 A High performance technology for extremely low rDS(on) RoHS Compliant Applications Synchronous Rectifier for DC/DC Converters Telecom Secondary Side Rectification High End Server/Workstation Pin 1 S S S D 5 4 G D 6 3 S D 7 2 S D 8 1 S G D D D D Power 56 Top Bottom MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous (Package limited) ID TC = 25 °C -Continuous (Silicon limited) TC = 25 °C -Continuous TA = 25 °C Ratings 30 Units V ±20 V 49 78 (Note 1a) -Pulsed 18 A 200 EAS Single Pulse Avalanche Energy (Note 3) 72 mJ dv/dt Peak Diode Recovery dv/dt (Note 4) 1.3 V/ns (Note 1a) 3.3 PD TJ, TSTG Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C 60 Operating and Storage Junction Temperature Range -55 to +150 W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case (Top Source) 5.7 RθJC Thermal Resistance, Junction to Case (Bottom Drain) 2.1 RθJA Thermal Resistance, Junction to Ambient (Note 1a) 38 RθJA Thermal Resistance, Junction to Ambient (Note 1b) 81 RθJA Thermal Resistance, Junction to Ambient (Note 1i) 16 RθJA Thermal Resistance, Junction to Ambient (Note 1j) 23 RθJA Thermal Resistance, Junction to Ambient (Note 1k) 11 °C/W Package Marking and Ordering Information Device Marking 3016 Device FDMS3016DC ©2010 Fairchild Semiconductor Corporation FDMS3016DC Rev.C Package Dual CoolTM Power 56 1 Reel Size 13’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMS3016DC N-Channel Dual CoolTM PowerTrench® MOSFET July 2010 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA 3.0 V 30 V 17 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance 1.0 1.9 -6 mV/°C VGS = 10 V, ID = 12 A 5.0 6.0 VGS = 4.5 V, ID = 10 A 7.0 9.0 VGS = 10 V, ID = 12 A, TJ = 125 °C 7.5 9.4 VDS = 5 V, ID = 12 A 44 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 15 V, VGS = 0 V, f = 1 MHz 1038 1385 pF 513 685 pF 87 135 pF Ω 0.9 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge VGS = 0 V to 10 V Qg Total Gate Charge Qgs Gate to Source Gate Charge VGS = 0 V to 4.5 V VDD = 15 V, ID = 12 A Qgd Gate to Drain “Miller” Charge VDD = 15 V, ID = 12 A, VGS = 10 V, RGEN = 6 Ω 9 18 ns 3 10 ns 19 35 ns 2 10 ns 16 23 nC 7.6 10.6 nC 3 nC 2.5 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ©2010 Fairchild Semiconductor Corporation FDMS3016DC Rev.C VGS = 0 V, IS = 12 A VGS = 0 V, IS = 1.9 A (Note 2) (Note 2) IF = 12 A, di/dt = 100 A/μs 2 0.82 1.3 0.73 1.2 V 25 45 ns 9 18 nC www.fairchildsemi.com FDMS3016DC N-Channel Dual CoolTM PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted RθJC Thermal Resistance, Junction to Case (Top Source) 5.7 RθJC Thermal Resistance, Junction to Case (Bottom Drain) 2.1 RθJA Thermal Resistance, Junction to Ambient (Note 1a) 38 RθJA Thermal Resistance, Junction to Ambient (Note 1b) 81 RθJA Thermal Resistance, Junction to Ambient (Note 1c) 27 RθJA Thermal Resistance, Junction to Ambient (Note 1d) 34 RθJA Thermal Resistance, Junction to Ambient (Note 1e) 16 RθJA Thermal Resistance, Junction to Ambient (Note 1f) 19 RθJA Thermal Resistance, Junction to Ambient (Note 1g) 26 RθJA Thermal Resistance, Junction to Ambient (Note 1h) 61 RθJA Thermal Resistance, Junction to Ambient (Note 1i) 16 RθJA Thermal Resistance, Junction to Ambient (Note 1j) 23 RθJA Thermal Resistance, Junction to Ambient (Note 1k) 11 RθJA Thermal Resistance, Junction to Ambient (Note 1l) 13 °C/W NOTES: 1. RθJA is determined with the device mounted on a FR-4 board using a specified pad of 2 oz copper as shown below. RθJC is guaranteed by design while RθCA is determined by the user's board design. b. 81 °C/W when mounted on a minimum pad of 2 oz copper a. 38 °C/W when mounted on a 1 in2 pad of 2 oz copper c. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper d. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper e. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in2 pad of 2 oz copper f. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper g. 200FPM Airflow, No Heat Sink,1 in2 pad of 2 oz copper h. 200FPM Airflow, No Heat Sink, minimum pad of 2 oz copper i. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper j. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper k. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in2 pad of 2 oz copper l. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. EAS of 72 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 12 A, VDD = 27 V, VGS = 10 V. 4. ISD ≤ 12 A, di/dt ≤ 100 A/μs, VDD ≤ BVDSS, Starting TJ = 25 oC. ©2010 Fairchild Semiconductor Corporation FDMS3016DC Rev.C 3 www.fairchildsemi.com FDMS3016DC N-Channel Dual CoolTM PowerTrench® MOSFET Thermal Characteristics 50 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 6 VGS = 10V ID, DRAIN CURRENT (A) 40 VGS = 4.5V VGS = 3.5V 30 VGS = 4V 20 PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX 10 VGS = 3V 0 0 1 2 3 4 PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX 5 VGS = 3V 4 VGS = 3.5V 3 VGS = 4V 1 VGS = 10V 0 5 0 10 VDS, DRAIN TO SOURCE VOLTAGE (V) rDS(on), DRAIN TO 1.4 1.2 1.0 0.8 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC) SOURCE ON-RESISTANCE (m:) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 40 50 50 ID = 12A VGS = 10V PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX 40 ID = 12A 30 20 TJ = 125oC 10 TJ = 25oC 0 150 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 50 IS, REVERSE DRAIN CURRENT (A) 50 PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX 40 ID, DRAIN CURRENT (A) 30 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.8 0.6 -50 20 ID, DRAIN CURRENT(A) Figure 1. On-Region Characteristics 1.6 VGS = 4.5V 2 VDS = 5V 30 20 TJ = 150oC TJ = 25oC 10 TJ = -55oC 0 1 2 3 4 VGS = 0V 10 TJ = 150oC 1 TJ = 25oC 0.1 TJ = -55oC 0.01 0.001 0.0 5 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2010 Fairchild Semiconductor Corporation FDMS3016DC Rev.C 4 1.2 www.fairchildsemi.com FDMS3016DC N-Channel Dual CoolTM Power Trench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 10 3000 VGS, GATE TO SOURCE VOLTAGE(V) ID = 12A Ciss 8 1000 CAPACITANCE (pF) VDD = 10V VDD = 15V 6 VDD = 20V 4 Coss 100 f = 1MHz VGS = 0V 2 0 0 3 6 9 12 15 Crss 30 0.1 18 1 10 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE(nC) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 80 30 o ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT(A) RθJC = 2.1 C/W 10 TJ = 25oC TJ = 125oC 1 0.01 0.1 1 10 60 VGS = 10 V 40 0 25 100 50 tAV, TIME IN AVALANCHE(ms) P(PK), PEAK TRANSIENT POWER (W) 2000 1000 ID, DRAIN CURRENT (A) 100 us 10 1 ms 10 ms 100 ms 1s THIS AREA IS LIMITED BY rDS(on) 10 s SINGLE PULSE TJ = MAX RATED DC RθJA = 81 oC/W TA = 25 oC 0.001 0.01 0.1 1 10 100 200 VDS, DRAIN to SOURCE VOLTAGE (V) 150 SINGLE PULSE o RθJA = 81 C/W o TA = 25 C 100 10 1 0.5 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, PULSE WIDTH (sec) Figure 11. Forward Bias Safe Operating Area ©2010 Fairchild Semiconductor Corporation FDMS3016DC Rev.C 125 Figure 10. Maximum Continuous Drain Current vs Case Temperature 100 0.01 100 o 500 0.1 75 TC, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability 1 VGS = 4.5 V Limited by package 20 Figure 12. Single Pulse Maximum Power Dissipation 5 www.fairchildsemi.com FDMS3016DC N-Channel Dual CoolTM Power Trench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.01 t1 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA o RθJA = 81 C/W 0.001 0.0005 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2010 Fairchild Semiconductor Corporation FDMS3016DC Rev.C 6 www.fairchildsemi.com FDMS3016DC N-Channel Dual CoolTM Power Trench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted FDMS3016DC N-Channel Dual CoolTM PowerTrench® MOSFET Dimensional Outline and Pad Layout ©2010 Fairchild Semiconductor Corporation FDMS3016DC Rev.C 4 www.fairchildsemi.com tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I48 ©2010 Fairchild Semiconductor Corporation FDMS3016DC Rev.C 8 www.fairchildsemi.com FDMS3016DC N-Channel Dual CoolTM Power Trench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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