BC847BS NPN Multi-chip General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 200 mA. Sourced from Process 07. E2 B2 Dual NPN Signal Transister C1 NOTE: The pinouts are symmetrical; pin 1 and pin SC70-6 Mark: .1F Absolute Maximum Ratings Symbol C2 B1 Pin #1 E1 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device. * Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage Parameter 50 V VCES Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 6.0 V IC Collector Current (DC) 100 mA TJ, TSTG Junction Temperature and Storage Temperature -55 ~ +150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD R θ JA * Ta = 25°C unless otherwise noted Characteristic Max Units Total Device Dissipation 210 Derate above 25℃ 1.6 mW mW/℃ Thermal Resistance, Junction to Ambient 625 ℃/W *Device mounted on FR-4 PCB 1.6” X 1.6” X 0.06”. ©2007 Fairchild Semiconductor Corporation BC847BS Rev. A 1 www.fairchildsemi.com BC847BS June 2007 Symbol * Ta = 25°C unless otherwise noted Parameter Test Condition MIN MAX Units Off Characteristics V(BR)CBO Collector-Emitter Breakdown Voltage IC = 10 μA, IE = 0 50 V V(BR)CES Collector-Base Breakdown Voltage IC = 10 μA, IE = 0 50 V V(BR)CEO Collector-Base Breakdown Voltage IC = 10 mA, IB = 0 45 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 μA, IC = 0 6.0 V ICBO Collector-Cutoff Current VCB = 30 V, IE = 0 VCB = 30 V, IE = 0, TA = 150°C 15 5.0 nA μA On Characteristics hFE DC Current Gain VCE(sat) Collector-Emitter Saturation Voltage * IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5.0 mA IC = 2.0 mA, VCE = 5.0 V VBE(on) Emitter-Base Breakdown Voltage * IC = 2.0 mA, VCE = 5.0 V IC = 10 mA, VCE = 5.0 V 200 0.58 450 0.25 0.65 V V 0.7 0.77 V V * Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors. 2 BC847BS Rev. A www.fairchildsemi.com BC847BS Electrical Characteristics FAIRCHILD SEMICONDUCTOR TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT® FAST® FASTr™ FPS™ FRFET™ FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ μSerDes™ ScalarPump™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ TinyBoost™ TinyBuck™ TinyPWM™ TinyPower™ TinyLogic® TINYOPTO™ TruTranslation™ UHC® UniFET™ VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I23 3 BC847BS Rev. A www.fairchildsemi.com BC847BS tm