SANYO TF410

TF410
Ordering number : ENA2007
SANYO Semiconductors
DATA SHEET
N-Channel Silicon Junction FET
TF410
Impedance Converter,
Infrared Sensor Applications
Applications
•
Impedance conversion, infrared sensor applications
Features
•
•
•
•
Ultrasmall package facilities miniaturization in end products : 1.0mm×0.6mm×0.27mm (max 0.3mm)
Small IGSS : max --500pA (VGSS= --20V, VDS=0V)
Small Ciss : typ. 0.7pF (VDS= 10V, VGS=0V, f=1MHz)
Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
Ratings
Unit
VDSS
VGDS
Gate-to-Drain Voltage
40
V
--40
V
IG
ID
10
mA
1
mA
30
mW
Junction Temperature
PD
Tj
Storage Temperature
Tstg
Gate Current
Drain Current
Allowable Power Dissipation
150
°C
--55 to +150
°C
Package Dimensions
Product & Package Information
unit : mm (typ)
7055-003
• Package
: USFP
• JEITA, JEDEC
: • Minimum Packing Quantity : 10,000 pcs./reel
0.6
0.1
0.2
0.11
Packing Type: TL
Marking
3
3
TL
2
0.15
B
LOT No.
1
LOT No.
0.1
1.0
0.8
0 to 0.02
0.175
2
3
0.05
1
0.05
0.27
Electrical Connection
1
2
3
1 : Source
2 : Drain
3 : Gate
SANYO : USFP
1 : Source
2 : Drain
3 : Gate
1
2
Top view
http://semicon.sanyo.com/en/network
22912GB TKIM TC-00002703 No. A2007-1/3
TF410
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Gate-to-Drain Breakdown Voltage
Gate-to-Source Leakage Current
Cutoff Voltage
Drain Current
typ
IG=--10μA, VDS=0V
VGS=--20V, VDS=0V
VDS=10V, ID=1μA
--40
VDS=10V, VGS=0V
50
Forward Transfer Admittance
Input Capacitance
Ciss
Reverse Transfer Capacitance
Crss
V
--1.4
VDS=10V, VGS=0V, f=1kHz
0.05
ID -- VDS
Drain Current, ID -- μA
--0.2V
60
--0.4V
40
--0.6V
--0.8V
20
V
130
μA
mS
0.7
pF
0.3
pF
ID -- VDS
120
VGS=0V
100
VGS=0V
80
--0.2V
60
--0.4V
--0.6V
40
--0.8V
20
--1.0V
--1.0V
0
0
1
2
3
4
Drain-to-Source Voltage, VDS -- V
120
ID -- VGS
15
20
25
Cutoff Voltage, VGS(off) -- V
--2
5°
C
40
25
°C
°C
75
20
30
IT16762
VGS(off) -- IDSS
VDS=10V
ID=1.0μA
--1.8
60
--1.6
--1.4
--1.2
--1.0
--0.8
--0.6
0
--2.0
--1.5
--1.0
--0.5
Gate-to-Source Voltage, VGS -- V
| yfs | -- IDSS
--0.4
40
0
60
100
120
VGS=0V
f=1MHz
7
0.12
0.11
0.10
0.09
0.08
140
IT16765
Ciss -- VDS
1.0
VDS=10V
VGS=0V
f=1kHz
80
Drain Current, IDSS -- μA
IT16764
Input Capacitance, Ciss -- pF
0.13
10
--2.0
80
0.14
5
Drain-to-Source Voltage, VDS -- V
VDS=10V
Ta
=
Drain Current, ID -- μA
0
IT16761
100
Forward Transfer Admittance, | yfs | -- mS
0
5
pA
--4.0
0.11
VDS=10V, VGS=0V, f=1MHz
80
Unit
max
--500
100
Drain Current, ID -- μA
min
V(BR)GDS
IGSS
VGS(off)
IDSS
| yfs |
120
Ratings
Conditions
5
3
2
0.07
0.06
40
60
80
100
Drain Current, IDSS -- μA
120
140
IT16766
0.1
0.1
2
3
5 7 1.0
2
3
5 7 10
2
3
Drain-to-Source Voltage, VDS -- V
5 7 100
IT16767
No. A2007-2/3
TF410
Crss -- VDS
VGS=0V
f=1MHz
7
5
3
2
0.1
0.1
2
3
5 7 1.0
2
3
5 7 10
2
3
Drain-to-Source Voltage, VDS -- V
5 7 100
IT16768
PD -- Ta
35
Allowable Power Dissipation, PD -- mW
Reverse Transfer Capacitance, Crss -- pF
1.0
30
25
20
15
10
5
0
0
20
40
60
80
100
120
140
Ambient Temperature, Ta -- °C
160
IT16778
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PS No. A2007-3/3