SEMIKRON SKM600GB126D

SKM 600GB126D ...
.* - $
Absolute Maximum Ratings
Symbol Conditions
IGBT
'
/ .* -
"
/ ,*+ -
#
2 +
#
1++
#
6 .+
/ ,.* -
,+
9
.* -
2;+
#
1+ -
<2+
#
1++
#
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.11+
#
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2;+
#
1+ -
<2+
#
1++
#
.11+
#
*++
#
/
@ 2+ === A ,*+
-
@ 2+ === A ,.*
-
2+++
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++ 7 5 ) .+ 7
' 8 ,.++ Inverse Diode
":
/ ,*+ -
":34
":34.!":
":'4
,+ 7 =
SKM 600GAL126D
Freewheeling Diode
! "
Typical Applications*
# $
%&'
$
Remarks
"( ) *++# ,++ -
":
/ ,*+ -
":34
":34.!":
":'4
,+ 7 =
/ ,*+ -
Module
">34'?
# , =
.* - $
Characteristics
Symbol Conditions
IGBT
5>
?
5 " , #
"'
5 + '
/ .* -
>?
max.
Units
*
*1
*
+
5 ,* / .* -
,
,.
/ ,.* -
+;
,,
/ .*-
,1
.2
B
/ ,.*-
.1
<2
B
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=
.* 5 + #
#
,C
.,*
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=
.
.2*
, 4D
<.
,,
:
:
..
:
E5
5 @1 @ A.+
< ++
35
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F
.;+
+
<;
C+
1+
G
$>?
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35 . B
35 . B
1
typ.
+.
GAL
min.
/ ,.* -
+
GB
1+ -
SKM 600GB126D
Features
,.++
+
5'
Trench IGBT Module
Units
.* -
"34
SEMITRANS® 3
Values
3
>/@?
++
" 2++#
/ ,.* -
5 6 ,*
2
"5H
06-10-2009 NOS
G
++**
IJK
© by SEMIKRON
SKM 600GB126D ...
Characteristics
Symbol Conditions
Inverse diode
: ": 2++ #7 5 + :+
:
®
SEMITRANS 3
Trench IGBT Module
"334
E
": 2++ #
$J$ C ++ #J9
5 @,* 7 ++ 3
>/@?(
$$
min.
typ.
max.
Units
/ .* -
=
,
,1
/ ,.* -
=
,
,1
/ .* -
,
,,
/ ,.* -
+1
+;
/ .* -
,*
,1
B
/ ,.* -
.
.<
B
/ ,.* -
2C*
;
#
9
2,
G
+,.*
IJK
Freewheeling Diode
SKM 600GB126D
SKM 600GAL126D
: ": 2++ #7 5 + :+
:
Features
! "
Typical Applications*
# $
%&'
$
Remarks
"( ) *++# ,++ -
"334
E
": 2++ #
$J$ C ++ #J9
5 @,* 7 ++ 3
>/@?:(
$$
/ .* -
=
,
,1
/ ,.* -
=
,
,1
/ .* -
,
,,
/ ,.* -
+1
+;
/ .* -
,*
,1
/ ,.* -
.
.<
/ ,.* -
2C*
;
#
9
2,
G
+,.*
IJK
Module
L
3MAM
,*
= @
3
>@?
$
4
N 4
4
4
.+
.* -
+<*
B
,.* -
+*
B
++<1
IJK
<
*
O
.*
*
O
<.*
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
* The specifications of our components may not be considered as an assurance of
component characteristics. Components have to be tested for the respective
application. Adjustments may be necessary. The use of SEMIKRON products in
life support appliances and systems is subject to prior specification and written
approval by SEMIKRON. We therefore strongly recommend prior consultation of
our personal.
GB
2
GAL
06-10-2009 NOS
© by SEMIKRON
SKM 600GB126D ...
SEMITRANS® 3
Zth
Symbol
Zth(j-c)l
Conditions
Values
Units
3
3
3
3
,
.
<
2
,
.
<
<1
,<
<2
+
++1<
+++;
+++.2
NJK
NJK
NJK
NJK
2
++++.
3
3
3
3
,
.
<
2
,
.
<
C*
<;
;*
,*
++<.C
++,+,
+++.
NJK
NJK
NJK
NJK
2
++++<
Zth(j-c)D
Trench IGBT Module
SKM 600GB126D
SKM 600GAL126D
Features
! "
Typical Applications*
# $
%&'
$
Remarks
"( ) *++# ,++ -
GB
3
GAL
06-10-2009 NOS
© by SEMIKRON
SKM 600GB126D ...
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
4
06-10-2009 NOS
© by SEMIKRON
SKM 600GB126D ...
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance
Fig. 10 CAL diode forward characteristic
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode peak reverse recovery charge
5
06-10-2009 NOS
© by SEMIKRON
SKM 600GB126D ...
UL Recognized
File no. E 63 532
( *
5H
6
( *
5#L
( *C
06-10-2009 NOS
© by SEMIKRON