STMICROELECTRONICS STP180N10F3

STB180N10F3
STP180N10F3
N-channel 100 V, 4.0 mΩ, 120 A STripFET™ Power MOSFET
D2PAK, TO-220
Preliminary Data
Features
Type
VDSS
RDS(on)
ID
STB180N10F3
100 V
4.5 mΩ
120 A(1)
STP180N10F3
100 V
4.8 mΩ
120 A(1)
1. Value limited by wire bonding
■
Ultra low on-resistance
■
100% avalanche tested
3
3
1
1
2
TO-220
D2PAK
Application
■
High current switching applications
Description
Figure 1.
Internal schematic diagram
This n-channel enhancement mode Power
MOSFET is the latest refinement of
STMicroelectronics unique “single feature size”
strip-based process with less critical alignment
steps and therefore a remarkable manufacturing
reproducibility. The resulting transistor shows
extremely high packing density for low on
resistance, rugged avalanche characteristics and
low gate charge.
Table 1.
Device summary
Order codes
Marking
Package
Packaging
STB180N10F3
180N10F3
D2PAK
Tape and reel
STP180N10F3
180N10F3
TO-220
Tube
August 2008
Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/12
www.st.com
12
Contents
STB180N10F3 - STP180N10F3
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3
Test circuit
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
5
Packaging mechanical data
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
................................................ 6
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
STB180N10F3 - STP180N10F3
1
Electrical ratings
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
VDS
Drain-source voltage (VGS=0)
100
V
VGS
Gate-source voltage
± 20
V
ID (1)
Drain current (continuous) at TC = 25°C
120
A
ID (1)
Drain current (continuous) at TC=100°C
120
A
IDM (2)
Drain current (pulsed)
480
A
PTOT
Total dissipation at TC = 25°C
315
W
Derating factor
2.1
W/°C
Peak diode recovery voltage slope
TBD
V/ns
EAS (3)
Single pulse avalanche energy
TBD
mJ
Tj
Operating junction temperature
storage temperature
-55 To 175
°C
dv/dt
Tstg
1. Current limited by package.
2. Pulse width limited by safe operating area.
3. Starting Tj=25°C, Id=60 A, Vdd=40 V
Table 3.
Symbol
Rthj-case
Thermal data
Parameter
TO-220
Thermal resistance junction-case
D²PAK
0.48
Unit
°C/W
Rthj-a
Thermal resistance junction-ambient
max
62.5
--
°C/W
Rthj-pcb(1)
Thermal resistance junction-ambient
max
--
35
°C/W
300
--
°C
Tl
Maximum lead temperature for
soldering purpose
1. When mounted on FR-4 board, on 1inch², 2oz Cu.
3/12
Electrical characteristics
2
STB180N10F3 - STP180N10F3
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4.
Symbol
On/off states
Parameter
Test conditions
Drain-source breakdown
voltage
ID = 250 µA, VGS= 0
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS= max rating,
VDS= max rating,@125°C
IGSS
Gate body leakage current
VGS = ±20 V
(VDS = 0)
V(BR)DSS
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 250 µA
RDS(on)
Static drain-source on
resistance
VGS= 10 V, ID= 60 A
D²PAK
TO-220
Table 5.
Symbol
Min.
Typ.
Max.
100
Unit
V
2
10
100
µA
µA
±200
nA
4
V
4.5
4.8
mΩ
mΩ
Max.
Unit
Dynamic
Parameter
Test conditions
Min.
Typ.
gfs (1)
Forward
transconductance
VDS = 15 V , ID = 60 A
TBD
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25 V, f = 1 MHz,
VGS = 0
TBD
TBD
TBD
pF
pF
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 44 V, ID = 120 A,
VGS = 10 V
(see Figure 3)
100
TBD
C
TBD
nC
nC
nC
Typ.
Max.
Unit
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
Table 6.
Symbol
td(on)
tr
td(off)
tf
4/12
Dynamic
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD = 27.5 V, ID = 60 A
RG = 4.7 Ω VGS = 10 V
(see Figure 2, Figure 7)
Min.
TBD
TBD
TBD
TBD
ns
ns
ns
ns
STB180N10F3 - STP180N10F3
Table 7.
Symbol
Electrical characteristics
Source drain diode
Parameter
ISDM(1)
Source-drain current
Source-drain current
(pulsed)
VSD(2)
Forward on voltage
ISD
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Test conditions
Min.
Typ.
ISD=120 A, VGS=0
ISD=120 A,
di/dt = 100 A/µs,
VDD=30 V, Tj=150°C
(see Figure 4)
TBD
TBD
TBD
Max.
Unit
120
480
A
A
1.5
V
ns
µC
A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
5/12
Test circuit
STB180N10F3 - STP180N10F3
3
Test circuit
Figure 2.
Switching times test circuit for
resistive load
Figure 4.
Test circuit for inductive load
Figure 5.
switching and diode recovery times
Unclamped inductive load test
circuit
Figure 6.
Unclamped inductive waveform
Switching time waveform
6/12
Figure 3.
Figure 7.
Gate charge test circuit
STB180N10F3 - STP180N10F3
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
7/12
Package mechanical data
STB180N10F3 - STP180N10F3
TO-220 mechanical data
mm
inch
Dim
Min
A
b
b1
c
D
D1
E
e
e1
F
H1
J1
L
L1
L20
L30
∅P
Q
8/12
Typ
4.40
0.61
1.14
0.48
15.25
Max
Min
4.60
0.88
1.70
0.70
15.75
0.173
0.024
0.044
0.019
0.6
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
1.27
10
2.40
4.95
1.23
6.20
2.40
13
3.50
Max
0.181
0.034
0.066
0.027
0.62
0.050
16.40
28.90
3.75
2.65
Typ
0.409
0.106
0.202
0.051
0.256
0.107
0.551
0.154
0.645
1.137
3.85
2.95
0.147
0.104
0.151
0.116
STB180N10F3 - STP180N10F3
Package mechanical data
D²PAK (TO-263) mechanical data
mm
inch
Dim
Min
A
A1
b
b2
c
c2
D
D1
E
E1
e
e1
H
J1
L
L1
L2
R
V2
Typ
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
10
8.50
Max
Min
4.60
0.23
0.93
1.70
0.60
1.36
9.35
0.173
0.001
0.027
0.045
0.017
0.048
0.352
0.295
0.394
0.334
10.40
2.54
4.88
15
2.49
2.29
1.27
1.30
Max
0.181
0.009
0.037
0.067
0.024
0.053
0.368
0.409
0.1
5.28
15.85
2.69
2.79
1.40
1.75
0.192
0.590
0.099
0.090
0.05
0.051
8°
0°
0.4
0°
Typ
0.208
0.624
0.106
0.110
0.055
0.069
0.016
8°
0079457_M
9/12
Packaging mechanical data
5
STB180N10F3 - STP180N10F3
Packaging mechanical data
D2PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM.
mm
MIN.
A
B
1.5
C
12.8
D
20.2
G
24.4
N
100
T
TAPE MECHANICAL DATA
DIM.
mm
MIN.
MAX.
MIN.
A0
10.5
10.7
0.413 0.421
B0
15.7
15.9
0.618 0.626
D
1.5
1.6
0.059 0.063
D1
1.59
1.61
0.062 0.063
E
1.65
1.85
0.065 0.073
F
11.4
11.6
0.449 0.456
K0
4.8
5.0
0.189 0.197
P0
3.9
4.1
0.153 0.161
P1
11.9
12.1
0.468 0.476
P2
1.9
2.1
0.075 0.082
MAX.
R
50
1.574
T
0.25
0.35 0.0098 0.0137
W
23.7
24.3
* on sales type
10/12
inch
0.933 0.956
inch
MAX.
MIN.
MAX.
330
12.992
13.2
0.504 0.520
26.4
0.960 1.039
0.059
0795
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
1000
STB180N10F3 - STP180N10F3
6
Revision history
Revision history
Table 8.
Document revision history
Date
Revision
01-Aug-2008
1
Changes
First version
11/12
STB180N10F3 - STP180N10F3
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