STMICROELECTRONICS STW75N20

STB75N20
STP75N20 - STW75N20
N-channel 200V - 0.028Ω - 75A - D2PAK - TO-220 - TO-247
Low gate charge STripFET™ Power MOSFET
General features
Type
VDSS
RDS(on)
ID
STB75N20
200V
<0.034Ω
75A
3
1
STP75N20
200V
<0.034Ω
75A
STW75N20
200V
<0.034Ω
75A
■
Exceptional dv/dt capability
■
Low gate charge
■
D²PAK
TO-247
3
1
100% Avalanche tested
2
TO-220
Description
This Power MOSFET series realized with
STMicroelectronics unique STripFET™ process
has specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced highefficiency isolated DC-DC converters
Internal schematic diagram
Applications
■
Switching application
Order codes
Part number
Marking
Package
Packaging
STB75N20T4
B75N20
D²PAK
Tape & reel
STP75N20
P75N20
TO-220
Tube
STW75N20
W75N20
TO-247
Tube
July 2006
Rev 4
1/16
www.st.com
16
Contents
STB75N20 - STP75N20 - STW75N20
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................. 6
3
Test circuit
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/16
................................................ 9
STB75N20 - STP75N20 - STW75N20
1
Electrical ratings
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
VDS
VDGR
VGS
Parameter
Value
Unit
Drain-source voltage (VGS = 0)
200
V
Drain-gate voltage (RGS = 20 kΩ)
200
V
Gate-source voltage
± 20
V
ID
Drain current (continuous) at TC = 25°C
75
A
ID
Drain current (continuous) at TC = 100°C
47
A
Drain current (pulsed)
300
A
Derating factor
1.52
PTOT
Total dissipation at TC = 25°C
190
W
TJ
Tstg
Operating junction temperature
Storage temperture
-50 to 150
°C
IDM
(1)
1. ISD < 20A, di/dt < 100A/µs, VDD = 80% V(BR)DSS
Table 2.
Thermal resistance
Value
Symbol
Parameter
Unit
TO-220/D²PAK
Thermal resistance junction-case Max
RthJC
RthJ-pcb
(1)
Thermal resistance junction-pcb Max
RthJA
Thermal resistance junction-ambient Max
Tl
Maximum lead temperature for soldering
purpose
TO-247
0.66
°C/W
34
--
°C/W
62.5
40
°C/W
300
°C
1. When mounted on inch²FR-4 board (t < 10µs)
Table 3.
Avalanche characteristics
Symbol
Parameter
Max value
Unit
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by TJ max)
37
A
EAS
Single pulse avalanche energy
(starting TJ= 25°C, Id= Iar, Vdd=50V)
205
mJ
3/16
Electrical characteristics
2
STB75N20 - STP75N20 - STW75N20
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4.
Symbol
On/off states
Parameter
Test conditions
Drain-source breakdown
voltage
ID = 1mA, VGS= 0
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating @125°C
IGSS
Gate body leakage current
(VDS = 0)
VDS = ± 20V
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 250µA
RDS(on)
Static drain-source on
resistance
VGS= 10V, ID= 37A
V(BR)DSS
Table 5.
Symbol
Parameter
Forward transconductance
Ciss
Input capacitance
Output capacitance
Reverse Transfer
Capacitance
Crss
Qg
Qgs
Qgd
Typ.
Max.
200
2
Unit
V
1
10
µA
µA
±100
nA
3
4
V
0.028
0.034
Ω
Typ.
Max.
Unit
Dynamic
gfs(1)
Coss
Min.
Total gate charge
Gate-source charge
Gate-drain charge
Test conditions
Min.
VDS = 15V, ID= 37A
VDS = 25V, f = 1 MHz,
VGS =0
VDD= 160V, ID=75A,
VGS= 10V
(see Figure 16)
40
S
3260
640
110
pF
pF
pF
84
18
34
nC
nC
nC
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Table 6.
Symbol
td(on)
tr
td(off)
tf
4/16
Switching times
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD = 100V, ID = 37A
RG= 4.7Ω, VGS= 10V,
(see Figure 15)
Min.
Typ.
53
33
75
29
Max.
Unit
ns
ns
ns
ns
STB75N20 - STP75N20 - STW75N20
Table 7.
Symbol
ISD
Electrical characteristics
Source drain diode
Parameter
Test conditions
Min
Typ.
Max
Unit
75
300
A
A
1.6
V
ISDM(1)
Source-drain current
Source-drain current (pulsed)
VSD(2)
Forward on voltage
ISD = 75A, VGS = 0
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 75A,VDD = 100V
di/dt = 100 A/µs
Tj = 25°C (see Figure 20)
222
2.18
19
ns
µC
A
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 75A, VDD = 100V
267
3
22
ns
µC
A
trr
Qrr
IRRM
trr
Qrr
IRRM
di/dt = 100 A/µs
Tj = 150°C (see Figure 20)
1. Pulse with limited by maximum temperature
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
5/16
Electrical characteristics
STB75N20 - STP75N20 - STW75N20
2.1
Electrical characteristics (curves)
Figure 1.
Safe operating area for TO-220 /
D²PAK
Figure 2.
Thermal impedance for TO-220 /
D²PAK
Figure 3.
Safe operating area for TO-247
Figure 4.
Thermal impedance for TO-247
Figure 5.
Output characterisics
Figure 6.
Transfer characteristics
6/16
STB75N20 - STP75N20 - STW75N20
Electrical characteristics
Figure 7.
Normalized BVDSS vs temperature
Figure 9.
Gate charge vs gate-source voltage Figure 10. Capacitance variations
Figure 11. Normalized gate threshold voltage
vs temperature
Figure 8.
Static drain-source on resistance
Figure 12. Normalized on resistance vs
temperature
7/16
Electrical characteristics
Figure 13. Source-drain diode forward
characteristics
8/16
STB75N20 - STP75N20 - STW75N20
Figure 14. Avalanche energy vs starting Tj
STB75N20 - STP75N20 - STW75N20
3
Test circuit
Test circuit
Figure 15. Switching times test circuit for
resistive load
Figure 16. Gate charge test circuit
Figure 17. Test circuit for inductive load
Figure 18. Unclamped inductive load test
switching and diode recovery times
circuit
Figure 19. Unclamped inductive waveform
Figure 20. Switching time waveform
9/16
Package mechanical data
4
STB75N20 - STP75N20 - STW75N20
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
10/16
STB75N20 - STP75N20 - STW75N20
Package mechanical data
TO-220 MECHANICAL DATA
DIM.
mm.
MIN.
TYP
inch
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
b
0.61
0.88
0.024
0.034
b1
1.15
1.70
0.045
0.066
c
0.49
0.70
0.019
0.027
D
15.25
15.75
0.60
0.620
E
10
10.40
0.393
0.409
e
2.40
2.70
0.094
0.106
e1
4.95
5.15
0.194
0.202
F
1.23
1.32
0.048
0.052
H1
6.20
6.60
0.244
0.256
J1
2.40
2.72
0.094
0.107
0.551
L
13
14
0.511
L1
3.50
3.93
0.137
L20
16.40
L30
0.154
0.645
28.90
1.137
øP
3.75
3.85
0.147
0.151
Q
2.65
2.95
0.104
0.116
11/16
Package mechanical data
STB75N20 - STP75N20 - STW75N20
TO-247 MECHANICAL DATA
DIM.
mm.
MIN.
inch
MAX.
MIN.
TYP.
MAX.
A
4.85
5.15
0.19
0.20
A1
2.20
2.60
0.086
0.102
b
1.0
1.40
0.039
0.055
b1
2.0
2.40
0.079
0.094
0.134
b2
3.0
3.40
0.118
c
0.40
0.80
0.015
0.03
D
19.85
20.15
0.781
0.793
E
15.45
15.75
0.608
e
5.45
0.620
0.214
L
14.20
14.80
0.560
L1
3.70
4.30
0.14
L2
18.50
0.582
0.17
0.728
øP
3.55
3.65
0.140
0.143
øR
4.50
5.50
0.177
0.216
S
12/16
TYP
5.50
0.216
STB75N20 - STP75N20 - STW75N20
Package mechanical data
D2PAK MECHANICAL DATA
TO-247 MECHANICAL DATA
mm.
inch
DIM.
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
B
0.7
0.93
0.027
0.036
B2
1.14
1.7
0.044
0.067
C
0.45
0.6
0.017
0.023
C2
1.23
1.36
0.048
0.053
D
8.95
9.35
0.352
0.368
10.4
0.393
D1
E
8
10
E1
0.315
8.5
0.334
G
4.88
5.28
0.192
0.208
L
15
15.85
0.590
0.625
L2
1.27
1.4
0.050
0.055
L3
1.4
1.75
0.055
0.068
M
2.4
3.2
0.094
R
0º
0.126
0.015
4º
3
V2
0.4
1
13/16
Packaging mechanical data
5
STB75N20 - STP75N20 - STW75N20
Packaging mechanical data
D2PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM.
mm
MIN.
A
B
1.5
C
12.8
D
20.2
G
24.4
N
100
T
TAPE MECHANICAL DATA
DIM.
mm
MIN.
MAX.
MIN.
A0
10.5
10.7
0.413 0.421
B0
15.7
15.9
0.618 0.626
D
1.5
1.6
0.059 0.063
D1
1.59
1.61
0.062 0.063
E
1.65
1.85
0.065 0.073
F
11.4
11.6
0.449 0.456
K0
4.8
5.0
0.189 0.197
P0
3.9
4.1
0.153 0.161
P1
11.9
12.1
0.468 0.476
P2
1.9
2.1
0.075 0.082
MAX.
R
50
1.574
T
0.25
0.35 0.0098 0.0137
W
23.7
24.3
* on sales type
14/16
inch
0.933 0.956
inch
MAX.
MIN.
MAX.
330
12.992
13.2
0.504 0.520
26.4
0.960 1.039
0.059
0795
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
1000
STB75N20 - STP75N20 - STW75N20
6
Revision history
Revision history
Table 8.
Revision history
Date
Revision
Changes
08-May-2005
1
First release
28-Mar-2006
2
Preliminary version
19-May-2006
3
Complete version with curves
19-Jul-2006
4
New template, no content change
15/16
STB75N20 - STP75N20 - STW75N20
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2006 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
16/16