TIGER ELECTRONIC CO.,LTD TO-92 Plastic-Encapsulate Transistors TO-92 2SC945 TRANSISTOR (NPN ) 1.EMITTER FEATURE z Excellent hFE linearity z Low noise z Complementary to A733 2.COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 400 mW TJ Junction Temperature 125 ℃ Tstg Storage Temperature -55-125 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=1mA , IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=100 μA , IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=100 μ A, IC=0 5 V Collector cut-off current ICBO VCB=60V, IE=0 0.1 μA Collector cut-off current ICEO VCE=45V, IB=0 0.1 μA Emitter cut-off current IEBO VEB=5V ,IC=0 0.1 μA hFE(1) VCE=6V , IC=1mA 70 hFE(2) VCE=6V , IC=0.1mA 40 Collector-emitter saturation voltage VCE(sat) IC=100mA, IB=10mA 0.3 V Base-emitter saturation voltage VBE(sat) IC=100mA, IB=10mA 1 V DC current gain fT Transition frequency Collector output capacitance Cob Noise figure NF VCE=6V,IC=10mA,f=30MHz 700 200 VCB=10V,IE=0,f=1MHz VCE=6V,IC=0.1mA RG=10kΩ,f=1MHz MHz 3.0 pF 10 dB CLASSIFICATION OF hFE(1) Rank O Y GR BL Range 70-140 120-240 200-400 350-700 A,Jan,2011