UNISONIC TECHNOLOGIES CO., LTD 2SC3356 NPN SILICON TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER DESCRIPTION The UTC 2SC3356 is designed for such applications as: DC/DC converters, supply line switching, battery charger, LCD backlighting, peripheral drivers, Driver in low supply voltage applications (e.g. lamps and LEDs) and inductive load driver (e.g. relays, buzzers and motors). FEATURES * Low Noise and High Gain * High Power Gain ORDERING INFORMATION Ordering Number Lead Free 2SC3356L-x-AE3-R Package SOT-23 1 E Pin Description 2 3 B C Packing Tape Reel MARKING www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd 1 of 4 QW-R206-024,E 2SC3356 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING PARAMETER SYMBOL RATINGS UNIT Collector to Base Voltage BVCBO 20 V Collector to Emitter Voltage BVCEO 12 V Emitter to Base Voltage BVEBO 3 V Collector Current IC 100 mA Power Dissipation PD 200 mW Junction Temperature TJ 150 °С Storage Temperature TSTG -65~ +150 °С Notes: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25°С, unless otherwise specified) PARAMETER Collector-Base Cut-Off Current Emitter-Base Cut-Off Current DC Current Gain Gain Bandwidth Product Feed-Back Capacitance Noise Figure SYMBOL ICBO IEBO hFE fT CRE NF TEST CONDITIONS VCB =10V,IE =0 VEB =1 V, IC=0 VCE =10 V, IC =20 mA VCE =10 V, IC =20 mA VCB =10 V, IE =0, f =1.0MHz VCE =10 V, IC =7mA, f =1.0GHz MIN TYP 50 MAX 1.0 1.0 300 7 1.0 2.0 UNIT μA μA GHz pF dB CLASSIFICATION OF hFE RANK RANGE A 50-160 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw B 160-240 C 240-300 2 of 4 QW-R206-024,E 2SC3356 TYPICAL CHARACTERISTICS Feed-back Capacitance, CRE (pF) Total Power Dissipation, PT (mW) NPN SILICON TRANSISTOR 200 DC Current Gain vs. Collector Current Insertion Gain vs. Collector Current 15 VCE=10V 100 10 50 5 20 1 10 5 Collector Current, IC (mA) 0 0.5 50 1 10 5 Collector Current, IC (mA) 50 70 Maximum Gain, GMAX (dB) Insertion Gain,|S21θ|2(dB) Gain Bandwidth Product, fT (MHz) 10 0.5 VCE=10V f=1.0GHz UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R206-024,E 2SC3356 NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS(Cont.) 7 Noise Figure vs. Collector Current Noise Figue, NF (dB) Noise Figure, NF (dB) 5 4 3 2 f=1.0GHz IC=20mA 4 |S21θ|2 3 2 NF 1 1 0 0.5 5 VCE=10V f=1.0GHz 6 Noise Figure, Forward Insertion Gain vs. Collector to Emitter Voltage 0 1 5 10 Collector Current, IC (mA) 50 70 0 2 4 6 8 10 Collector to Emitter Voltage, VCE (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R206-024,E