FAIRCHILD FFPF08S60ST_12

STEALTH
II Rectifier
FFPF08S60ST
tm
Features
8A, 600V STEALTHTM II Rectifier
• High Speed Switching, trr < 30ns @ IF = 8A
The FFPF08S60ST is STEALTHTM II rectifier with soft recovery
characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.
• High Reverse Voltage and High Reliability
• RoHS component
This device is intended for use as freewheeling of boost diode in
switching power supplies and other power swithching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits
reducing power loss in the switching transistors.
Applications
• General Purpose
• Switching Mode Power Supply
• Boost Diode in continuous mode power factor corrections
• Power switching circuits
Pin Assignments
1. Cathode 2. Anode
Absolute Maximum Ratings T
C
Symbol
2
2. Anode
1
1. Cathode
TO-220F-2L
= 25°C unless otherwise noted
Parameter
Value
Units
VRRM
Peak Repetitive Reverse Voltage
600
V
VRWM
Working Peak Reverse Voltage
600
V
VR
DC Blocking Voltage
600
V
IF(AV)
Average Rectified Forward Current
8
A
IFSM
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
80
A
TJ, TSTG
Operating Junction and Storage Temperature
- 65 to +150
°C
@ TC = 95 °C
Thermal Characteristics
Symbol
Parameter
Maximum Thermal Resistance, Junction to Case
RθJC
Max
Units
3.4
°C/W
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
F08S60ST
FFPF08S60STTU
TO-220F-2L
-
-
50
©2012 Fairchild Semiconductor Corporation
FFPF08S60ST Rev. C0
1
www.fairchildsemi.com
FFPF08S60ST
May 2012
TM
C
= 25°C unless otherwise noted
Parameter
1
Conditions
Min.
Typ.
Max
Units
IF = 8A
IF = 8A
TC = 25 °C
TC = 125 °C
-
2.1
1.6
2.6
-
V
V
IRM1
VR = 600V
VR = 600V
TC = 25 °C
TC = 125 °C
-
-
100
500
μA
μA
trr
IF =1A, di/dt = 100A/μs, VR= 30V
TC = 25 °C
-
-
25
ns
trr
Irr
S factor
Qrr
IF =8A, di/dt = 200A/μs, VR = 390V
TC = 25 °C
-
19
2.2
0.6
21
30
-
ns
A
trr
Irr
S factor
Qrr
IF =8A, di/dt = 200A/μs, VR= 390V
TC = 125 °C
-
58
4.3
1.3
125
-
nC
WAVL
Avalanche Energy (L = 40mH)
20
-
-
mJ
VFM
nC
ns
A
Notes:
1. Pulse : Test Pulse width = 300μs, Duty Cycle = 2%
Test Circuit and Waveforms
FFPF08S60ST Rev. C0
2
www.fairchildsemi.com
FFPF08S60ST
Electrical Characteristics T
C
= 25°C unless otherwise noted
Figure 1. Typical Forward Voltage Drop
Figure 2. Typical Reverse Current
1E-4
REVERSE CURRENT, IR [A]
FPRWARD CURRENT, IF [A]
100
o
TC=125 C
10
o
TC=25 C
1
o
TC=75 C
0.1
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
1E-5
1E-6
o
TC = 75 C
1E-7
o
TC = 25 C
1E-8
1E-9
3.2
o
TC = 125 C
0
100
200
FORWARD VOLTAGE, VF [V]
500
600
100
f = 1MHz
90
REVERSE RECOVERY TIME, trr [ns]
JUNCTION CAPACITANCE, CJ [pF]
400
Figure 4. Typical Reverse Recovery Time
100
80
70
60
50
40
30
20
10
1
10
100
IF = 8A
90
80
70
o
TC = 125 C
60
50
40
o
TC = 75 C
30
20
o
TC = 25 C
10
0
100
1000
200
REVERSE VOLTAGE, VR [V]
AVERAGE FORWARD CURRENT, IF(AV) [A]
IF =8A
8
7
6
5
o
TC = 125 C
o
TC = 75 C
4
o
TC = 25 C
3
2
1
0
100
200
300
400
500
12
11
10
9
8
7
6
DC
5
4
3
2
1
0
70
500
80
90
100
110
120
130
140
150
o
CASE TEMPERATURE, TC [ C]
di/dt [A/μs]
FFPF08S60ST Rev. C0
400
Figure 6. Forward Current Deration Curve
10
9
300
di/dt [A/μs]
Figure 5. Typical Reverse Recovery Current
REVERSE RECOVERY CURRENT, Irr [A]
300
REVERSE VOLTAGE, VR [V]
Figure 3. Typical Junction Capacitance
0
FFPF08S60ST
Typical Performance Characteristics T
3
www.fairchildsemi.com
FFPF08S60ST
Mechanical Dimensions
TO-220F 2L Potting Type
Dimensions in Millimeters
FFPF08S60ST Rev. C0
4
www.fairchildsemi.com
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®*
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I61
FFPF08S60ST Rev. C0