FDT434P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. • –5.5 A, –20 V. RDS(ON) = 0.050 Ω @ VGS = –4.5 V RDS(ON) = 0.070 Ω @ VGS = –2.5 V. • Low gate charge (13nC typical) Applications • High performance trench technology for extremely low RDS(ON) . • Low Dropout Regulator • High power and current handling capability in a widely used surface mount package. • DC/DC converter • Load switch • Motor driving D D S D G G SOT-223 Absolute Maximum Ratings Symbol S D TA=25oC unless otherwise noted Parameter Ratings Units VDSS Drain-Source Voltage –20 V VGSS Gate-Source Voltage ±8 V ID Drain Current –6 A – Continuous (Note 1a) – Pulsed PD –30 Power Dissipation for Single Operation (Note 1a) 3 (Note 1b) 1.3 (Note 1c) TJ, Tstg Operating and Storage Junction Temperature Range W 1.1 -55 to +150 °C (Note 1a) 42 °C/W (Note 1) 12 °C/W Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 434 FDT434P 13’’ 12mm 2500 units ©2011 Fairchild Semiconductor Corporation FDT434P Rev. C2 1 www.fairchildsemi.com FDT434P April 2011 Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units –28 mV/°C Off Characteristics –20 V BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = –250 µA,Referenced to 25°C VDS = –16 V, VGS = 0 V –1 µA IGSSF Gate–Body Leakage Current, Forward Gate–Body Leakage Current, Reverse VGS = 8 V, VDS = 0 V 100 nA VGS = –8 V VDS = 0 V –100 nA IGSSR On Characteristics (Note 2) –0.4 –0.6 –1 V VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID = –250 µA,Referenced to 25°C 2 0.040 0.050 0.067 ID(on) On–State Drain Current VGS = –4.5 V, ID = –6 A VGS = –2.5 V, ID = –4 A VGS = –4.5 V, ID = –6 A TJ=125°C VGS = –4.5 V, VDS = –5 V gFS Forward Transconductance VDS = –10 V, ID = –6 A 6.5 VDS = –10 V, f = 1.0 MHz V GS = 0 V, 1187 pF 270 pF 114 pF mV/°C 0.050 0.070 0.083 –20 Ω A S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time (Note 2) VDD = –5 V, VGS = –4.5 V, ID = –1 A, RGEN = 6 Ω 8 16 ns 15 25 ns ns td(off) Turn–Off Delay Time 45 65 tf Turn–Off Fall Time 30 50 ns Qg Total Gate Charge 13 19 nC Qgs Gate–Source Charge Qgd Gate–Drain Charge VDS = –10 V, VGS = –4.5 V ID = –6 A, 1.8 nC 3 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = –2.5 A (Note 2) –0.75 –2.5 A –1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 42°C/W when mounted on a 1in2 pad of 2 oz copper b) 95°/W when mounted on a .0066 in2 pad of 2 oz copper c) 110°/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% ©2011 Fairchild Semiconductor Corporation FDT434P Rev. C2 2 www.fairchildsemi.com FDT434P Electrical Characteristics FDT434P Typical Characteristics 1.8 -3.0V -2.5V 16 RDS(ON) , NORMALIZED -ID, DRAIN CURRENT (A) VGS = -4.5V 12 8 -2.0V 4 -1.5 V DRAIN-SOURCE ON-RESISTANCE 20 0 0 1 2 3 4 1.6 -3.0V 1.2 -3.5V -4.0V 0 5 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. 1.4 1.2 1 0.8 -25 0 25 50 75 100 TJ , JUNCTION TEMPERATURE (°C) 125 150 R DS(ON) DRAIN-SOURCE ON-RESISTANCE R DS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 15 20 0.15 ID = - 6 A VGS = - 4.5V 0.6 -50 I D = -6 A 0.12 0.09 TA =125°C 0.06 25°C 0.03 0 Figure 3. On-Resistance Variation withTemperature. 1 12 - I S, REVERSE DRAIN CURRENT (A) 15 VDS = -5V TJ = -55°C 25°C 125°C 9 6 3 1.2 1.5 1.8 2.1 2.4 -VGS , GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. ©2011 Fairchild Semiconductor Corporation FDT434P Rev. C2 2 3 4 - V GS, GATE TO SOURCE VOLTAGE (V) 5 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 15 - I D, DRAIN CURRENT (A) 10 - I D, DRAIN CURRENT (A) Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 0 0.9 -4.5V 1 0.8 5 VGS = -2.5V 1.4 TJ = 125°C 1 25°C -55°C 0.1 0.01 0.001 2.7 VGS = 0V 0 0.2 0.4 0.6 0.8 1 1.2 -VSD , BODY DIODE FORWARD VOLTAGE (V) 1.4 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 3 www.fairchildsemi.com FDT434P Typical Characteristics 1800 I D = -6.0A -V f = 1MHz VGS = 0 V 1600 V DS= -5V -10V -15V 1400 CAPACITANCE (pF) 4 3 2 CISS 1200 1000 800 600 COSS 400 1 CRSS 200 GS , GATE-SOURCE VOLTAGE (V) 5 0 0 0 3 6 9 Q g , GATE CHARGE (nC) 12 15 0 2 4 6 8 10 Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 100 200 SINGLE PULSE 100 µs 10 o 10ms R DS(ON) LIMIT 1s T A = 25 oC 100ms 10s DC 1 V GS= -4.5V SINGLE PULSE 0.1 RθJA = 110 C/W 160 POWER (W) -I D, DRAIN CURRENT (A) 12 -VDS, DRAIN TO SOURCE VOLTAGE (V) 120 80 40 R θJA= 110 oC/W T A= 25 oC 0 0.01 0.1 1 10 0.0001 100 0.001 0.01 -V DS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 0.1 1 10 100 1000 SINGLE PULSE TIME (SEC) Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 R θJA (t) = r(t) * R 0.2 0.1 0.05 P(pk) 0.02 0.01 t1 0.01 t2 T J - T A = P * R θJA (t) Duty Cycle, D = t 1 / t 2 Single Pulse 0.001 0.001 θJA R θJA = 110 °C/W 0.1 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. ©2011 Fairchild Semiconductor Corporation FDT434P Rev. C2 4 www.fairchildsemi.com FDT434P TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I53 ©2011 Fairchild Semiconductor Corporation FDT434P Rev. C2 5 www.fairchildsemi.com