FAIRCHILD 2N6518

2N6518
2N6518
High Voltage Transistor
• Collector-Emitter Voltage: VCEO= -250V
• Collector Dissipation: PC (max)=625mW
• Complement to 2N6515
TO-92
1
PNP Epitaxial Silicon Transistor
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
VCBO
Collector-Base Voltage
Parameter
Value
-250
Units
V
VCEO
Collector-Emitter Voltage
-250
V
VEBO
Emitter-Base Voltage
IC
-5
V
Collector Current
-500
mA
IB
Base Current
-250
mA
PC
Collector Power Dissipation
625
mW
5
mW/°C
TJ
Derate above 25°C
Junction Temperature
150
°C
TSTG
Storage Temperature
-55 ~ 150
°C
• Refer to 2N6520 for graphs
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
BVCBO
Parameter
* Collector-Base Breakdown Voltage
Test Condition
IC= -100µA, IE=0
Min.
-250
BVCEO
Collector-Emitter Breakdown Voltage
IC= -1mA, IB=0
-250
BVEBO
Emitter-Base Breakdown Voltage
IE= -10µA, IC=0
-5
ICBO
Collector Cut-off Current
VCB= -150V, IE=0
IEBO
Emitter Cut-off Current
VEB= -4V, IC=0
hFE
* DC Current Gain
VCE= -10V, IC= -1mA
VCE= -10V, IC= -10mA
VCE= -10V, IC= -30mA
VCE= -10V, IC= -50mA
VCE= -10V, IC= -100mA
35
50
50
45
25
Max.
Units
V
V
V
-50
nA
-50
nA
300
220
VCE (sat)
Collector-Emitter Saturation Voltage
IC= -10mA, IB= -1mA
IC= -20mA, IB= -2mA
IC= -30mA, IB= -3mA
IC= -50mA, IB= -5mA
-0.30
-0.35
-0.50
-1
V
V
V
V
VBE (sat)
Base-Emitter Saturation Voltage
IC= -10mA, IB= -1mA
IC= -20mA, IB= -2mA
IC= -30mA, IB= -3mA
-0.75
-0.85
-0.90
V
V
V
VBE (on)
Base-Emitter On Voltage
VCE= -10V, IC= -100mA
fT
* Current Gain Bandwidth Product
VCE= -20V, IC= -10mA, f=20MHz
-2
V
200
MHz
Cob
Output Capacitance
CEB
Emitter-Base Capacitance
VCB= -20V, IE=0, f=1MHz
6
pF
VEB= -0.5V, IC=0, f=1MHz
100
tON
pF
Turn On Time
VBE (off)= -2V, VCC= -100V
IC= -50mA, IB1= -10mA
200
ns
tOFF
Turn Off Time
VCC= -100V, IC= -50mA
IB1=IB2=10mA
3.5
ns
40
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
©2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
2N6518
Package Dimensions
TO-92
+0.25
4.58 ±0.20
4.58 –0.15
±0.10
14.47 ±0.40
0.46
1.27TYP
[1.27 ±0.20]
1.27TYP
[1.27 ±0.20]
±0.20
(0.25)
+0.10
0.38 –0.05
1.02 ±0.10
3.86MAX
3.60
+0.10
0.38 –0.05
(R2.29)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
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As used herein:
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or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
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2. A critical component is any component of a life support
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. I1