FGD2N40L 400V N-Channel Logic Level IGBT Features General Description VCE(SAT) = 1.6V @ IC = 2.5A, VGE = 2.4V This N-Channel IGBT is a MOS gated, logic level device which has been especially tailored for small engine ignition applications. The gate is ESD protected with a zener diode. 6kV ESD Protected High Peak Current Density TO-252 (D-Pak) Low VGE(TH) Applications Small Engine Ignition Applications ©2006 Fairchild Semiconductor Corporation FGD2N40L Rev. A 1 www.fairchildsemi.com FGD2N40L 400V N-Channel Logic Level IGBT March 2006 Symbol BVCES Parameter Collector to Emitter Breakdown Voltage Ratings 400 Units V IC Collector Current Continuous(DC) 7 A ICP Collector Current Pulsed(100µs) 29 A VGES Gate to Emitter Voltage Continuous(DC) ±8 V VGEP Gate to Emitter Voltage Pulsed ±10 V PD Power Dissipation Total TC = 25oC 29 W °C TJ Operating Junction Temperature Range -40 to 150 TSTG Storage Junction Temperature Range -40 to 150 °C ESD Electrostatic Discharge Voltage at 100pF, 1500Ω 6 kV Package Marking and Ordering Information Device Marking FGD2N40 Device Package FGD2N40L D-PAK Tape Width Quantity 12mm / 16mm 2500 Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units V Off Characteristics BVCES Collector to Emitter Breakdown Voltage IC = 1mA, VGE = 0V 400 - - BVGES Gate-Emitter Breakdown Voltage IGES = ±1mA ±10 - - V - - 10 µA TC = +25oC ICES Collector to Emitter leakage Current VCE = 320V - - 250 µA IGES Gate-Emitter Leakage Current VGE = ±8 - - ±10 µA IC = 2.5A, VGE = 2.4V(NOTE1) - 1.3 1.6 V - 11 - nC TC = +125oC On Characteristics VCE(SAT) Collector to Emitter Saturation Voltage Dynamic Characteristics QG(ON) Gate Charge IC = 2.5A, VCE = 300V, VGE = 10V VGEP Gate to Emitter Plateau Voltage IC = 2.5A, VCE = 300V - 1.8 - V VGE(TH) Gate to Emitter Threshold Voltage IC = 1.0mA, VCE = VGE 0.70 0.85 1.2 V CIES Input Capacitance VCE = 10V, VGE = 0V, f =1MHz - 357 - pF RG Internal Gate Series Resistance 300 ohms Switching Characteristics - 0.142 - µs - 0.047 - µs - 0.095 - µs Turn-Off Time - 2.152 - µs td(OFF)I Current Turn-Off Delay Time - 0.650 - µs tfI Current Fall Time - 1.529 - µs - - tON Turn-On Time td(ON)I Current Turn-On Delay Time trI Current Rise Time tOFF VCC = 300V, IC = 2.5A, VGE = 4V, RL = 120Ω, RG = 51Ω, TJ = 25oC Thermal Characteristics RθJC Thermal Resistance Junction-Case TO-252 (D-Pak) 4.29 °C/W Notes: 1: Pulse Duration = 100 µsec 2 FGD2N40L Rev. A www.fairchildsemi.com FGD2N40L 400V N-Channel Logic Level IGBT Device Maximum Ratings TA= 25°C unless otherwise noted ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) 30 Waveforms in descending order V GE = 8V 25 V GE = 6V V GE = 5V 20 V GE = 4V V GE = 3.5V V GE = 2.4V 15 V GE = 2.2V V GE = 2V 10 5 o T J = -40 C PULSE DURATION = 100 µ s 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 30 Waveforms in descending order V GE = 8V 25 V GE = 6V V GE = 5V 20 V GE = 4V V GE = 3.5V V GE = 2.4V 15 V GE = 2.2V V GE = 2V 10 5 o T J = 25 C PULSE DURATION = 100 µ s 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 V CE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 1. Collector Current Vs. Collector to Emitter On-State Voltage Figure 2. Collector Current Vs. Collector to Emitter On-State Voltage 30 ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) V CE, COLLECTOR TO EMITTER VOLTAGE (V) W aveforms in descending order V GE = 8V 25 V GE = 6V V GE = 5V 20 V GE = 4V V GE = 3.5V V GE = 2.4V 15 V GE = 2.2V V GE = 2V 10 5 o T J = 70 C PULSE DURATION = 100 µ s 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 30 Waveforms in descending order V GE = 8V 25 V GE = 6V V GE = 5V 20 V GE = 4V V GE = 3.5V V GE = 2.4V 15 V GE = 2.2V V GE = 2V 10 5 o T J = 125 C PULSE DURATION = 100µ s 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 3. Collector Current Vs. Collector to Emitter On-State Voltage Figure 4. Collector Current Vs. Collector to Emitter On-State Voltage 3.5 VCE, COLLECTOR TO EMITTER VOLTAGE (V) VCE, COLLECTOR TO EMITTER VOLTAGE (V) V CE , COLLECTOR TO EMITTER VOLTAGE (V) V GE = 4V 3.0 PULSE DURATIO N = 100 µ s ICE = 15A 2.5 2.0 ICE = 8A 1.5 1.0 ICE = 2.5A 0.5 -40 -20 0 20 40 60 80 100 120 140 o V GE = 5V PULSE DURAT IO N = 100 µ s 3.0 ICE = 15A 2.5 2.0 ICE = 8A 1.5 1.0 I CE = 2.5A 0.5 -40 -20 0 20 40 60 80 100 120 140 o T J , JUNCTION TEMPERATURE ( C) T J , JU N CTION TEMPER ATU R E ( C) Figure 5. Collector to Emitter Saturation Voltage Vs. Junction Temperature Figure 6. Collector to Emitter Saturation Voltage Vs. Junction Temperature 3 FGD2N40L Rev. A 3.5 www.fairchildsemi.com FGD2N40L 400V N-Channel Logic Level IGBT Typical Performance Characteristics VCE, COLLECTOR TO EMITTER VOLTAGE (V) VCE, COLLECTOR TO EMITTER VOLTAGE (V) 8 DUTY CYCLE < 0.5% PULSE DURATION = 250µs o TJ = -40 C 7 6 5 4 3 ICE = 15A ICE = 8A 2 1 ICE = 2.5A 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 8 DUTY CYCLE < 0.5% PULSE DURATION = 250µs o TJ = 25 C 7 6 5 4 ICE = 15A 3 ICE = 8A 2 1 ICE = 2.5A 0 1.0 VGE, GATE TO EMITTER VOLTAGE (V) VCE, COLLECTOR TO EMITTER VOLTAGE (V) VCE, COLLECTOR TO EMITTER VOLTAGE (V) DUTY CYCLE < 0.5% PULSE DURATION = 250µs o TJ = 70 C 6 5 4 ICE = 15A ICE = 8A 2 1 ICE = 2.5A 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 2.5 3.0 3.5 4.0 4.5 5.0 Figure 8. Collector to Emitter On-State Voltage Vs. Gate to Emitter Voltage 8 3 2.0 VGE, GATE TO EMITTER VOLTAGE (V) Figure 7. Collector to Emitter On-State Voltage Vs. Gate to Emitter Voltage 7 1.5 4.5 5.0 8 DUTY CYCLE < 0.5% PULSE DURATION = 250µs o TJ = 125 C 7 6 5 4 ICE = 15A 3 ICE = 8A 2 1 ICE = 2.5A 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VGE, GATE TO EMITTER VOLTAGE (V) VGE, GATE TO EMITTER VOLTAGE (V) Figure 9. Collector to Emitter On-State Voltage Vs. Gate to Emitter Voltage Figure 10. Collector to Emitter On-State Voltage Vs. Gate to Emitter Voltage 1000 ICE = 1m A C IES V CE = V GE 1.1 C, CAPACITANCE (pF) VGE(TH), (NORMALIZED) GATE TO EMITTER THRESHOLD VOLTAGE 1.2 1.0 0.9 0.8 C OES 100 C RES 10 0.7 V GE = 0V , f = 1M H z o T C = 25 C 1 0.6 -40 -20 0 20 40 60 80 100 120 140 0.1 160 o Figure 11. Normalized Gate to Emitter Threshold Voltage Vs. Junction Temperature 10 100 Figure 12. Capacitance Vs. Collector to Emitter Voltage 4 FGD2N40L Rev. A 1 V C E , C O LLEC TO R TO EM ITTE R V OLTA GE (V ) T J , JUN CTION TEMPERATUR E( C) www.fairchildsemi.com FGD2N40L 400V N-Channel Logic Level IGBT Typical Performance Characteristics toff 1000 tfall SWITCHING TIME (ns) SWITCHING TIME (ns) toff ton trise 100 tfall 1000 ton trise 100 VCE = 300V, VGE = 4V, RGE = 51Ω, VCE = 300V, VGE = 4V, ICE = 2.5A, o o TJ = 25 C TJ = 25 C 0 5 10 15 20 0 25 50 ICE, COLLECTOR TO EMITTER CURRENT (A) VGE, GATE TO EMITTER VOLTAGE (V) 10 IC = 2.5A, VCC = 300V o T J = 25 C 6 4 2 0 0 2 4 6 8 10 12 200 250 300 25 o 125 C 20 o 150 C o 25 C 15 o -40 C 10 5 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 V GE , GATE TO EMITTER VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 16. Transfer Figure 15. Gate Charge BVces, (NORMALIZED) COLLECTOR TO EMITTER BREAKDOWN VOLTAGE 150 Figure 14. Switching Time Vs. Gate Resistance ICE, COLLECTOR TO EMITTER CURRENT (A) Figure 13. Switching Time Vs. Collector Current 8 100 RG, GATE RESISTANCE (Ω ) 1.12 ICE = 1mA 1.10 1.08 1.06 1.04 1.02 1.00 0.98 0.96 0.94 0.92 -40 -20 0 20 40 60 80 100 120 140 160 o TJ, JUNCTION TEMPERATURE ( C) Figure 17. Normalized Collector to Emitter Breakdown Voltage Vs. Junction Temperature 5 FGD2N40L Rev. A www.fairchildsemi.com FGD2N40L 400V N-Channel Logic Level IGBT Typical Performance Characteristics The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I18 ©2006 Fairchild Semiconductor Corporation FGD2N40L Rev. A 6 www.fairchildsemi.com FGD2N40L 400V N-Channel Logic Level IGBT TRADEMARKS