2SA1179 / 2SC2812 Ordering number : EN3218B SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1179 / 2SC2812 Low-Frequency General-Purpose Amplifier Applications Features • • Miniature package facilitates miniaturization in end products. High breakdown voltage. Specifications ( ) : 2SA1179 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Symbol Conditions Ratings Unit (--)55 Collector-to-Emitter Voltage VCBO VCEO (--)50 V Emitter-to-Base Voltage VEBO (--)5 V Collector Current Collector Current (Pulse) Base Current Collector Dissipation V IC ICP (--)150 mA (--)300 mA IB PC (--)30 mA 200 mW 150 °C --55 to +150 °C Junction Temperature Tj Storage Temperature Tstg Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings min typ max Unit Collector Cutoff Current ICBO VCB=(--)35V, IE=0A (--)0.1 μA Emitter Cutoff Current IEBO hFE VEB=(--)4V, IC=0A (--)0.1 μA DC Current Gain Gain-Bandwidth Product fT VCE=(--)6V, IC=(--)1mA 2SC2812 : VCE=6V, IC=1mA 2SA1179 : VCE=--6V, IC=--10mA Marking: 2SA1179: M / 2SC2812: L *: The 2SA1179 / 2SC2812 are classified by 1mA hFE as follws: Rank 5 6 7 hFE 135 to 270 200 to 400 300 to 600 135* 600* 100 MHz (180) MHz Continued on next page. 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TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 20608 TI IM TC-00001200 / 11707CA TI IM X-2476, 2478 No.3218-1/5 2SA1179 / 2SC2812 Continued from preceding page. Parameter Symbol Output Capacitance Cob Collector-to-Emitter Saturation Voltage min typ VCB=(--)6V, f=1MHz IC=(--)50mA, IB=(--)5mA IC=(--)50mA, IB=(--)5mA VCE(sat) VBE(sat) Base-to-Emitter Saturation Voltage Ratings Conditions Collector-to-Base Breakdown Voltage V(BR)CBO Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Unit max (4.0)3.0 pF (--0.15)0.1 (--)0.5 V (--)1.0 V (--)55 V V(BR)CEO IC=(--)10μA, IE=0A IC=(--)1mA, RBE=∞ (--)50 V V(BR)EBO IE=(--)10μA, IC=0A (--)5 V Package Dimensions unit : mm (typ) 7013A-009 0.5 2.9 0.1 1 2 0.4 1 : Base 2 : Emitter 3 : Collector SANYO : CP 0.3 1.1 0.95 0.05 0.5 IC -- VCE Collector Current, IC -- mA --16 IC -- VCE 20 2SA1179 μA --50 A --45μ A --40μ A --35μ 0 3 -- μA --25μA --20μA --15μA --12 --8 Collector Current, IC -- mA 2.5 1.5 3 --10μA --4 2SC2812 50μA 45μA 16 40μA 35μA 12 30μA 25μA 20μA 8 15μA 4 10μA --5μA 5μA IB=0μA 0 0 --10 --20 --30 --40 Collector-to-Emitter Voltage, VCE -- V 0 0 --50 10 20 30 40 IT12001 IC -- VBE 240 2SA1179 VCE= --6V 2SC2812 VCE=6V --200 --160 --120 --80 --40 160 120 Ta=75° C 25°C --25°C Collector Current, IC -- mA 200 Ta=75 °C 25°C --25°C Collector Current, IC -- mA 50 Collector-to-Emitter Voltage, VCE -- V IT12000 IC -- VBE --240 IB=0μA 80 40 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 Base-to-Emitter Voltage, VBE -- V --1.2 IT12002 0 0 0.2 0.4 0.6 0.8 Base-to-Emitter Voltage, VBE -- V 1.0 1.2 IT12003 No.3218-2/5 2SA1179 / 2SC2812 hFE -- IC 2 hFE -- IC 3 2SA1179 VCE= --6V 2SC2812 VCE=6V 2 DC Current Gain, hFE 7 5 Ta=75°C 25°C --25°C 3 2 Ta=75°C 3 25°C --25°C 2 7 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 0.1 5 7--100 2 3 IT12004 2SA1179 VCE= --6V 5 3 2 100 7 5 3 2 3 5 7 --10 2 3 5 7 --100 2 Collector Current, IC -- mA 3 2 3 1.0 5 10 2 3 5 2SC2812 VCE=6V 7 5 3 2 100 7 5 3 2 3 5 7 2 10 3 5 7 100 2SC2812 f=1MHz 10 Output Capacitance, Cob -- pF 5 3 2 1.0 7 5 3 IT12007 Cob -- VCB 2 2SA1179 f=1MHz 7 2 Collector Current, IC -- mA IT12006 10 2 3 100 IT12005 f T -- IC 2 1.0 5 Cob -- VCB 2 5 1000 7 2 --1.0 2 3 Collector Current, IC -- mA f T -- IC 1000 Gain-Bandwidth Product, f T -- MHz 5 100 Collector Current, IC -- mA Output Capacitance, Cob -- pF 7 7 5 --0.1 7 5 3 2 1.0 7 5 3 2 3 7 --1.0 2 3 5 7 2 --10 3 5 Collector-to-Base Voltage, VCB -- V 7 5 2 --0.1 7 5 3 2 5 7 --10 2 3 5 3 7 --100 Collector Current, IC -- mA 2 3 5 7 2 10 3 5 IT12010 5 7 100 IT12009 VCE(sat) -- IC 2SC2812 IC / IB=10 2 3 3 2 1.0 3 2SA1179 IC / IB=10 2 7 Collector-to-Base Voltage, VCB -- V VCE(sat) -- IC --1.0 --0.01 --1.0 5 7 --100 IT12008 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 5 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 1000 100 Gain-Bandwidth Product, f T -- MHz DC Current Gain, hFE 1000 1.0 7 5 3 2 0.1 7 5 3 2 0.01 1.0 2 3 5 7 10 2 3 5 7 100 Collector Current, IC -- mA 2 3 IT12011 No.3218-3/5 2SA1179 / 2SC2812 ho e 10 5 2 hr e 1.0 1.0 5 5 3 3 2SA1179 f=270MHz IC= --1mA 0.1 5 7 10 3 5 7 2 --10 3 5 5 3 3 2 2 3 h oe 10 2 10 5 3 3 2 2 hr e 1.0 5 5 2SA1179 f=270MHz VCE= --6V 7 3 hre -- ✕104 5 hfe -- ✕10 hre -- ✕104 hie -- kΩ hoe -- μS hfe 1.0 2 3 5 7 1.0 2 3 5 1.0 10 IT12013 7 hre, hfe -- IC 5 2 hi e 5 10 7 3 0.1 6V Collector Current, IC -- mA 5 3 2 V 7 IT12012 hie, hre, hfe, hoe -- IC 3 h oe V, 6 2 V V 1.0 0.1 0.1 2 Collector-to-Emitter Voltage, VCE -- V 2 =3 =3 CE 2 --1.0 5 hi eV CE 3 5 2SC2812 hr eV CE =3 V 6V 3 =3V, 6V h fe V CE 2 1.0 100 7 7 5 5 3 3 2 2 2 0.1 2 --0.1 3 5 7 --1.0 Collector Current, IC -- mA 2 3 IT12014 PC -- Ta 250 0.1 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- mA 5 10 10 IT12015 7 Collector Dissipation, PC -- mW 2SA1179 / 2SC2812 200 150 100 50 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT12016 No.3218-4/5 hfe 2 hie -- kΩ 2 hfe -- ✕10 hre -- ✕104 3 hie 5 2SC2812 f=1MHz 2 5 3 hie -- kΩ hoe -- μS 3 10 hfe hie, hoe -- IC 5 2 hoe -- μS hie, hre, hfe, hoe -- VCE 2 2SA1179 / 2SC2812 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of February, 2008. Specifications and information herein are subject to change without notice. PS No.3218-5/5