STB23NM60ND-STF23NM60ND STI23NM60ND-STP/W23NM60ND N-channel 600 V - 0.150 Ω - 20 A - D2/I2PAK - TO-220/FP - TO-247 FDmesh™ II Power MOSFET (with fast diode) Preliminary Data Features Type VDSS (@Tjmax) STB23NM60ND STI23NM60ND STF23NM60ND STP23NM60ND STW23NM60ND 650 V 650 V 650 V 650 V 650 V RDS(on) max ID 3 3 12 1 < 0.180 Ω < 0.180 Ω < 0.180 Ω < 0.180 Ω < 0.180 Ω 20 A 20 A 20 A(1) 20 A 20 A D²PAK I²PAK 2 3 1 TO-247 3 1. Limited by wire bonding 1 ■ The worldwide best RDS(on) * area amongst the fast recovery diode devices ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance ■ High dv/dt and avalanche capabilities TO-220 Figure 1. 3 2 1 2 TO-220FP Internal schematic diagram Application ■ Switching applications Description The FDmesh™ II series belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body diode.It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. Table 1. Device summary Order codes Marking Package Packaging STB23NM60ND 23NM60ND D²PAK Tape & reel STI23NM60ND 23NM60ND I²PAK Tube STF23NM60ND 23NM60ND TO-220FP Tube STP23NM60ND 23NM60ND TO-220 Tube STW23NM60ND 23NM60ND TO-247 Tube January 2008 Rev 1 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/15 www.st.com 15 Contents STB23NM60ND-STF/I23NM60ND-STP23NM60ND-STW23NM60ND Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2/15 ................................................ 6 STB23NM60ND-STF/I23NM60ND-STP23NM60ND-STW23NM60ND 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter D²PAK/I²PAK TO-220FP TO-220/TO-247 Unit VDS Drain-source voltage (VGS=0) 600 V VGS Gate-source voltage ± 25 V ID Drain current (continuous) at TC = 25 °C 20 20 (1) A ID Drain current (continuous) at TC = 100 °C 12.6 12.6 (1) A IDM (2) Drain current (pulsed) 80 80 (1) A PTOT Total dissipation at TC = 25 °C 150 35 W dv/dt (3) Peak diode recovery voltage slope 40 VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C) Tstg Storage temperature Tj V/ns -- 2500 V -55 to 150 °C 150 °C Max. operating junction temperature 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤ 20 A, di/dt ≤ 600 A/µs, VDD =80% V(BR)DSS Table 3. Symbol Thermal data Parameter D²PAK/I²PAK TO-247 TO-220 Rthj-case Thermal resistance junction-case max 0.83 Rthj-amb Thermal resistance junction-amb max 62.5 Tl Table 4. Symbol Maximum lead temperature for soldering purposes TO-220FP Unit 3.6 °C/W 62.5 °C/W 50 300 °C Avalanche characteristics Parameter IAS Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) EAS Single pulse avalanche energy (starting Tj= 25 °C, ID = IAS, VDD = 50 V) Max value Unit 9 A 700 mJ 3/15 Electrical characteristics 2 STB23NM60ND-STF/I23NM60ND-STP23NM60ND-STW23NM60ND Electrical characteristics (TCASE=25°C unless otherwise specified) Table 5. Symbol V(BR)DSS dv/dt(1) 1. Parameter Drain-source breakdown voltage Drain-source voltage slope Test conditions ID = 1 mA, VGS= 0 Min. Typ. Max. 600 VDD = 480 V,ID = 20 A, V 30 VGS = 10 V Unit VDS = Max rating, V/ns VDS = Max rating,@125 °C 1 100 µA µA Gate body leakage current (VDS = 0) VGS = ±20 V 100 nA VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA 5 V RDS(on) Static drain-source on resistance VGS= 10 V, ID= 10 A IDSS Zero gate voltage drain current (VGS = 0) IGSS 3 4 Ω 0.150 0.180 Characteristic value at turn off on inductive load Table 6. Symbol Dynamic Parameter gfs(1) Forward transconductance Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance Test conditions VDS =15 V, ID= 10 A VDS = 50 V, f =1 MHz, VGS = 0 Min. Typ. Max. Unit 17 S 2050 140 8 pF pF pF Equivalent output capacitance VGS = 0, VDS = 0 to 480 V 260 pF Rg Gate input resistance f=1 MHz Gate DC Bias=0 Test signal level=20 mV open drain 4 Ω Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge 60 10 30 nC nC nC Coss eq.(2) 1. On/off states VDD = 480 V, ID = 20 A VGS = 10 V (see Figure 3) Pulsed: pulse duration = 300 µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/15 STB23NM60ND-STF/I23NM60ND-STP23NM60ND-STW23NM60ND Table 7. Symbol td(on) tr td(off) tf Table 8. Symbol Electrical characteristics Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions Min. Typ. Max. Unit 25 45 90 36 VDD = 300 V, ID = 10 A, RG = 4.7 Ω, VGS = 10 V (see Figure 2) ns ns ns ns Source drain diode Parameter Test conditions Min. Typ. Max. Unit ISD ISDM(1) Source-drain current Source-drain current (pulsed) VSD(2) Forward on voltage ISD = 20 A, VGS=0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 20 A, di/dt =100 A/µs, VDD = 100 V (see Figure 4) 140 0.85 12 ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current VDD = 100 V di/dt =100 A/µs, ISD = 20 A Tj = 150 °C (see Figure 4) TBD TBD TBD ns µC A trr Qrr IRRM trr Qrr IRRM 20 80 A A 1.3 V 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% 5/15 Test circuit STB23NM60ND-STF/I23NM60ND-STP23NM60ND-STW23NM60ND 3 Test circuit Figure 2. Switching times test circuit for resistive load Figure 4. Test circuit for inductive load Figure 5. switching and diode recovery times Unclamped inductive load test circuit Figure 6. Unclamped inductive waveform Switching time waveform 6/15 Figure 3. Figure 7. Gate charge test circuit STB23NM60ND-STF/I23NM60ND-STP23NM60ND-STW23NM60ND 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 7/15 Package mechanical data STB23NM60ND-STF/I23NM60ND-STP23NM60ND-STW23NM60ND TO-220 mechanical data mm inch Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q 8/15 Typ 4.40 0.61 1.14 0.49 15.25 Max Min 4.60 0.88 1.70 0.70 15.75 0.173 0.024 0.044 0.019 0.6 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 Max 0.181 0.034 0.066 0.027 0.62 0.050 16.40 28.90 3.75 2.65 Typ 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 3.85 2.95 0.147 0.104 0.151 0.116 STB23NM60ND-STF/I23NM60ND-STP23NM60ND-STW23NM60ND Package mechanical data TO-220FP mechanical data mm. DIM. Min. A 4.4 inch Typ. Max. Min. Typ. 4.6 0.173 0.181 Max. 0.106 B 2.5 2.7 0.098 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 1.126 1.204 0.417 L2 16 0.630 L3 28.6 30.6 L4 9.8 10.6 .0385 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L7 L3 L6 F2 H G G1 F F1 L7 L2 L5 1 23 L4 9/15 Package mechanical data STB23NM60ND-STF/I23NM60ND-STP23NM60ND-STW23NM60ND TO-262 (I2PAK) mechanical data mm. inch DIM. Min. 10/15 Typ. Max. Min. Typ. Max. A 4.40 4.60 0.173 0.181 A1 2.40 2.72 0.094 0.107 b 0.61 0.88 0.024 0.034 b1 1.14 1.70 0.044 0.066 c 0.49 0.70 0.019 0.027 c2 1.23 1.32 0.048 0.052 D 8.95 9.35 0.352 0.368 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 E 10 10.40 0.393 0.410 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L2 1.27 1.40 0.050 0.055 STB23NM60ND-STF/I23NM60ND-STP23NM60ND-STW23NM60ND Package mechanical data D²PAK mechanical data mm inch Dim Min A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 Typ 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 Max Min 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 10.4 0.393 8 10 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 0.409 0.334 5.28 15.85 1.4 1.75 3.2 0.4 0° Max 0.315 8.5 4.88 15 1.27 1.4 2.4 Typ 0.192 0.590 0.50 0.055 0.094 0.208 0.625 0.55 0.68 0.126 0.015 4° 11/15 Package mechanical data STB23NM60ND-STF/I23NM60ND-STP23NM60ND-STW23NM60ND TO-247 mechanical data mm. Dim. A Min. 4.85 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e Max . 5.15 5.45 L 14.20 14.80 L1 3.70 4.30 L2 18.50 øP 3.55 3.65 øR 4.50 5.50 S 12/15 Typ 5.50 STB23NM60ND-STF/I23NM60ND-STP23NM60ND-STW23NM60ND 5 Packaging mechanical data Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA DIM. mm MIN. inch MAX. MIN. inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 0.059 0795 26.4 0.960 1.039 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 MAX. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 R 50 0.075 0.082 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 0.933 0.956 * on sales type 13/15 Revision history 6 STB23NM60ND-STF/I23NM60ND-STP23NM60ND-STW23NM60ND Revision history Table 9. 14/15 Document revision history Date Revision 22-Jan-2008 1 Changes First release STB23NM60ND-STF/I23NM60ND-STP23NM60ND-STW23NM60ND Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2008 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 15/15