SPICE MODEL: DN350T05 DN350T05 Lead-free Green NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features · · · · · · Epitaxial Planar Die Construction Complementary PNP Type Available (DP350T05) C Lead Free By Design/RoHS Compliant (Note 2) "Green" Device (Note 3) B Qualified to AEC-Q101 Standards for High Reliability TOP VIEW B C E D E G Mechanical Data · · SOT-23 A Ideal for Medium Power Amplification and Switching Dim Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 E 0.45 0.60 G 1.78 2.05 H 2.80 3.00 H Case: SOT-23 K Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 J M L · · · Moisture Sensitivity: Level 1 per J-STD-020C J 0.013 0.10 Terminal Connections: See Diagram K 0.903 1.10 Terminals: Finish ¾ Matte Tin Finish annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 L 0.45 0.61 · · · M Marking (See Page 2): K3S 0.085 0.180 a 0° 8° Ordering & Date Code Information: See Page 2 All Dimensions in mm Weight: 0.008 grams (approximate) Maximum Ratings @ TA = 25°C unless otherwise specified Symbol Value Unit Collector-Base Voltage Characteristic VCBO 350 V Collector-Emitter Voltage VCEO 350 V Emitter-Base Voltage VEBO 5.0 V Continuous Collector Current IC 500 mA Power Dissipation (Note 1) Pd 300 mW RqJA 417 °C/W Tj, TSTG -55 to +150 °C Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. 3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. DS30625 Rev. 7 - 2 1 of 4 www.diodes.com DN350T05 ã Diodes Incorporated Electrical Characteristics @ TA = 25°C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO 350 ¾ V IC = 100mA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO 350 ¾ V IC = 1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 5.0 ¾ V IE = 10mA, IC = 0 Collector Cutoff Current ICBO ¾ 50 nA VCB = 250V, IE = 0 Collector Cutoff Current IEBO ¾ 50 nA VCE = 5V, IC = 0 hFE 20 30 30 20 15 ¾ ¾ 200 200 ¾ ¾ IC = 1.0mA, VCE = 10V IC = 10mA, VCE = 10V IC = 30mA, VCE = 10V IC = 50mA, VCE = 10V IC = 100mA,VCE = 10V Collector-Emitter Saturation Voltage VCE(SAT) ¾ ¾ ¾ ¾ 0.30 0.35 0.50 1.0 V IC = 10mA, IB = 1.0mA IC = 20mA, IB = 2.0mA IC = 30mA, IB = 3.0mA IC = 50mA, IB = 5.0mA Base-Emitter Saturation Voltage VBE(SAT) ¾ ¾ ¾ 0.75 0.80 0.90 V IC = 10mA, IB = 1.0mA IC = 20mA, IB = 2.0mA IC = 30mA, IB = 3.0mA Base-Emitter On Voltage VBE(ON) ¾ 2.0 V IC = 100mA, VCE = 10V VCB = 20V, f = 1.0MHz, IE = 0 OFF CHARACTERISTICS (Note 4) ON CHARACTERISTICS (Note 4) DC Current Gain SMALL SIGNAL CHARACTERISTICS Output Capacitance Cobo ¾ 7.0 pF Transition Frequency fT 50 ¾ MHz Note: VCE = 10V, IC = 20mA 4. Short duration pulse test used to minimize self-heating effect. Ordering Information (Note 5) Note: Device Packaging Shipping DN350T05-7 SOT-23 3000/Tape & Reel 5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information YM K3S = Product Type Marking Code YM = Date Code Marking Y = Year ex: S = 2005 M = Month ex: 9 = September K3S Date Code Key Year 2005 2006 2007 2008 2009 2010 2011 2012 Code S T U V W X Y Z Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS30625 Rev. 7 - 2 2 of 4 www.diodes.com DN350T05 300 400 Note 1 VCE = 10V 250 TA = 125°C 300 TA = 150°C hFE, DC CURRENT GAIN PD, POWER DISSIPATION (mW) 350 250 200 150 100 200 TA = 75°C 150 100 TA = 25°C TA = -55°C 50 50 0 0 0 25 200 75 100 125 150 175 TA, AMBIENT TEMPERATURE (°C) Fig. 1, Max Power Dissipation vs. Ambient Temperature 50 1 IC, COLLECTOR CURRENT (mA) Fig. 2, DC Current Gain vs. Collector Current 10 1 TA = 150°C VBE(SAT), BASE EMITTER SATURATION VOLTAGE (V) VCE(SAT), COLLECTOR EMITTER SATURATION VOLTAGE (V) IC IB = 10 TA = 125°C 1 0.1 TA = 75°C TA = 25°C TA = -55°C 0.01 0 20 10 30 40 50 60 70 80 TA = 75°C TA = 125°C TA = 25°C TA = 150°C TA = -55°C IC IB = 10 0.1 90 100 0 IC, COLLECTOR CURRENT (mA) Fig. 3, Collector-Emitter Saturation Voltage vs. Collector Current 1 10 20 30 40 50 60 70 80 90 100 IC, COLLECTOR CURRENT (mA) Fig. 4, Base Emitter Saturation Voltage vs. Collector Current 60 0.9 TA = 25°C TA = -55°C 50 0.8 TA = 75°C 0.7 C, CAPACITANCE (pF) VBE(ON), BASE EMITTER ON VOLTAGE (V) 100 10 TA = 25°C 0.6 0.5 TA = 150°C 0.4 0.3 TA = 125°C Cibo 40 30 20 0.2 10 0.1 VCE = 10V Cobo 0 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 5, Base-Emitter On Voltage vs. Collector Current DS30625 Rev. 7 - 2 3 of 4 www.diodes.com 0 0 1 3 2 4 VR, REVERSE VOLTAGE (V) Fig. 6, Capacitance vs. Reverse Voltage 5 DN350T05 IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30625 Rev. 7 - 2 4 of 4 www.diodes.com DN350T05