SPICE MODEL: MMBT5551 MMBT5551 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features · · · · Epitaxial Planar Die Construction Complementary PNP Type Available (MMBT5401) SOT-23 A Ideal for Medium Power Amplification and Switching C Lead Free/RoHS Compliant (Note 2) B Mechanical Data · · · · · · · Min Max A 0.37 0.51 B 1.20 1.40 C TOP VIEW E B C 2.30 2.50 G D 0.89 1.03 H E 0.45 0.60 G 1.78 2.05 H 2.80 3.00 J 0.013 0.10 K 0.903 1.10 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). L 0.45 0.61 M 0.085 0.180 Marking (See Page 2): K4N a 0° 8° D E · · Dim Case: SOT-23 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 K J Moisture Sensitivity: Level 1 per J-STD-020C M L Terminal Connections: See Diagram Terminals: Solderable per MIL-STD-202, Method 208 C Ordering & Date Code Information: See Page 2 B E All Dimensions in mm Weight: 0.008 grams (approximate) Maximum Ratings @ TA = 25°C unless otherwise specified Symbol MMBT5551 Unit Collector-Base Voltage Characteristic VCBO 180 V Collector-Emitter Voltage VCEO 160 V Emitter-Base Voltage VEBO 6.0 V IC 200 mA Pd Collector Current - Continuous (Note 1) Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Notes: 300 mW RqJA 417 °C/W Tj, TSTG -55 to +150 °C 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. DS30061 Rev. 9 - 2 1 of 4 www.diodes.com MMBT5551 ã Diodes Incorporated Electrical Characteristics @ TA = 25°C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO 180 ¾ V IC = 100mA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO 160 ¾ V IC = 1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 6.0 ¾ V IE = 10mA, IC = 0 VCB = 120V, IE = 0 VCB = 120V, IE = 0, TA = 100°C OFF CHARACTERISTICS (Note 3) Collector Cutoff Current ICBO ¾ 50 nA mA Emitter Cutoff Current IEBO ¾ 50 nA VEB = 4.0V, IC = 0 hFE 80 80 30 ¾ 250 ¾ ¾ IC = 1.0mA, VCE = 5.0V IC = 10mA, VCE = 5.0V IC = 50mA, VCE = 5.0V Collector-Emitter Saturation Voltage VCE(SAT) ¾ 0.15 0.20 V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA Base-Emitter Saturation Voltage VBE(SAT) ¾ 1.0 V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA Cobo ¾ 6.0 pF VCB = 10V, f = 1.0MHz, IE = 0 Small Signal Current Gain hfe 50 250 ¾ Current Gain-Bandwidth Product fT 100 300 MHz Noise Figure nF ¾ 8.0 dB ON CHARACTERISTICS (Note 3) DC Current Gain SMALL SIGNAL CHARACTERISTICS Output Capacitance Ordering Information Notes: VCE = 10V, IC = 1.0mA, f = 1.0kHz VCE = 10V, IC = 10mA, f = 100MHz VCE = 5.0V, IC = 200mA, RS = 1.0kW, f = 1.0kHz (Note 4) Device Packaging Shipping MMBT5551-7-F SOT-23 3000/Tape & Reel 3. Short duration test pulse used to minimize self-heating effect. 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information YM K4N = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September K4N Date Code Key Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 Code J K L M N P R S T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS30061 Rev. 9 - 2 2 of 4 www.diodes.com MMBT5551 0.15 IC = 10 IB 0.14 VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) PD, POWER DISSIPATION (mW) 350 300 250 200 150 100 50 0.13 0.12 TA = 150°C 0.11 0.10 0.09 0.08 TA = 25°C 0.07 0.06 0.05 TA = -50°C 0.04 0 0 25 50 75 100 125 150 175 1 200 TA, AMBIENT TEMPERATURE (°C) Fig. 1, Max Power Dissipation vs Ambient Temperature 1.0 VBE(ON), BASE EMITTER VOLTAGE (V) hFE, DC CURRENT GAIN (NORMALIZED) TA = 150°C 100 TA = 25°C TA = -50°C 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 2, Collector Emitter Saturation Voltage vs. Collector Current 1000 VCE = 5V 10 VCE = 5V 0.9 TA = -50°C 0.8 0.7 TA = 25°C 0.6 0.5 0.4 TA = 150°C 0.3 0.2 1 10 1 100 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 4, Base Emitter Voltage vs. Collector Current IC, COLLECTOR CURRENT (mA) Fig. 3, DC Current Gain vs Collector Current fT, GAIN BANDWIDTH PRODUCT (MHz) 1000 VCE = 5V 100 10 1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 5, Gain Bandwidth Product vs. Collector Current DS30061 Rev. 9 - 2 3 of 4 www.diodes.com MMBT5551 IMPORTANT NOTICE Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhancements, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT The products located on our website at www.diodes.com are not recommended for use in life support systems where a failure or malfunction of the component may directly threaten life or cause injury without the expressed written approval of Diodes Incorporated. DS30061 Rev. 9 - 2 4 of 4 www.diodes.com MMBT5551