FREESCALE MRF6S21100NR1

Freescale Semiconductor
Technical Data
Document Number: MRF6S21100N
Rev. 2, 1/2007
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
MRF6S21100NR1
MRF6S21100NBR1
Designed for W- CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be us ed in Clas s AB for PCN - PCS/c ellular radio, WLL and
TD - SCDMA applications.
• Typical 2 - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1050 mA,
Pout = 23 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz,
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 14.5 dB
Drain Efficiency — 25.5%
IM3 @ 10 MHz Offset — - 37 dBc in 3.84 MHz Bandwidth
ACPR @ 5 MHz Offset — - 40 dBc in 3.84 MHz Bandwidth
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 100 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
• 200°C Capable Plastic Package
• N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
2110 - 2170 MHz, 23 W AVG., 28 V
2 x W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
PLASTIC
MRF6S21100NR1
CASE 1484 - 04, STYLE 1
TO - 272 WB - 4
PLASTIC
MRF6S21100NBR1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
VDSS
- 0.5, +68
Vdc
Gate - Source Voltage
VGS
- 0.5, +12
Vdc
Storage Temperature Range
Tstg
- 65 to +175
°C
Operating Junction Temperature
TJ
200
°C
Symbol
Value (1,2)
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 100 W CW
Case Temperature 73°C, 23 W CW
RθJC
0.57
0.66
Unit
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2007. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6S21100NR1 MRF6S21100NBR1
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1B (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
Package Peak Temperature
Unit
3
260
°C
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 330 μAdc)
VGS(th)
1
2
3
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 1050 mAdc)
VGS(Q)
—
2.8
—
Vdc
Fixture Gate Quiescent Voltage (1)
(VDS = 28 Vdc, ID = 1050 mAdc, Measured in Functional Test)
VGG(Q)
2.2
3.1
4.4
Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 3.3 Adc)
VDS(on)
—
0.24
—
Vdc
Crss
—
1.5
—
pF
Off Characteristics
On Characteristics
Dynamic Characteristics (2)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1050 mA, Pout = 23 W Avg., f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR measured in
3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01%
Probability on CCDF.
Power Gain
Gps
13
14.5
16
dB
Drain Efficiency
ηD
24
25.5
36
%
Intermodulation Distortion
Adjacent Channel Power Ratio
Input Return Loss
IM3
- 47
- 37
- 35
dBc
ACPR
- 50
- 40
- 38
dBc
IRL
—
- 12
- 10
dB
1. VGG = 11/10 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
schematic.
2. Part is internally matched both on input and output.
MRF6S21100NR1 MRF6S21100NBR1
2
RF Device Data
Freescale Semiconductor
R1
B1
VBIAS
VSUPPLY
+
C1
R2
C2
C3
R3
C4
Z5
C5
C6
Z12
RF
INPUT
Z6
Z1
Z2
Z3
Z7
Z8
Z9
Z4
RF
OUTPUT
Z10
C9
Z11
C7
C8
DUT
VSUPPLY
C10
Z1, Z10
Z2
Z3
Z4
Z5
Z6
0.743″
0.893″
0.175″
0.420″
1.231″
0.100″
x 0.084″
x 0.084″
x 0.084″
x 0.800″
x 0.040″
x 0.880″
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Z7
Z8
Z9
Z11, Z12
PCB
C11
C12
0.259″ x 0.880″ Microstrip
0.215″ x 0.230″ Microstrip
0.787″ x 0.084″ Microstrip
1.171″ x 0.120″ Microstrip
Arlon AD250, 0.030″, εr = 2.5
Figure 1. MRF6S21100NR1(NBR1) Test Circuit Schematic
Table 6. MRF6S21100NR1(NBR1) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1
Ferrite Bead
25008051107Y0
Fair - Rite
C1
10 μF, 35 V Tantalum Capacitor
T491D106K035AT
Kemet
C2
0.01 μF Chip Capacitor
C1825C103J1GAC
Kemet
C3, C4, C10
5.1 pF Chip Capacitors
ATC600B5R1BT250XT
ATC
C5, C6, C11, C12
10 μF, 50 V Chip Capacitors
GRM55DR61H106KA88L
Murata
C7
10 pF Chip Capacitor
ATC600B100BT250XT
ATC
C8
1.1 pF Chip Capacitor
ATC600B1R1BT250XT
ATC
C9
5.1 pF Chip Capacitor (MRF6S21100NR1)
8.2 pF Chip Capacitor (MRF6S21100NBR1)
AT600B5R1BT250XT
ATC600B8R2BT250XT
ATC
ATC
R1
1 kΩ, 1/4 W Chip Resistor
CRCW12061000FKTA
Vishay
R2
10 kΩ, 1/4 W Chip Resistor
CRCW12061001FKTA
Vishay
R3
10 Ω, 1/4 W Chip Resistor
CRCW120610R0FKTA
Vishay
MRF6S21100NR1 MRF6S21100NBR1
RF Device Data
Freescale Semiconductor
3
C3
B1 R3
C4
R1
R2
C2
C5
C7
C8
CUT OUT AREA
C1
C6
C9
C11 C12
MRF6S21100N/NB, Rev. 3
C10
Figure 2. MRF6S21100NR1(NBR1) Test Circuit Component Layout
MRF6S21100NR1 MRF6S21100NBR1
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
ηD
26
25
24
14.2
Gps
14
−31
13.8
−34
IM3
−37
13.6
ACPR
13.4
−40
13.2
−43
13
2060 2080
IRL
2100 2120
2140
2160
2180 2200
−9
−10
−11
−12
−13
−46
2220 2240
−14
IRL, INPUT RETURN LOSS (dB)
14.4
27
IM3 (dBc), ACPR (dBc)
Gps, POWER GAIN (dB)
14.6
28
VDD = 28 Vdc, Pout = 22.5 W (Avg.), IDQ = 1050 mA
2 −Carrier W−CDMA, 10 MHz Carrier Spacing
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
14.8
ηD, DRAIN
EFFICIENCY (%)
15
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier W - CDMA Broadband Performance @ Pout = 22.5 Watts Avg.
38
36
Gps, POWER GAIN (dB)
13.6
35
VDD = 28 Vdc, Pout = 45 W (Avg.), IDQ = 1050 mA
2 −Carrier W−CDMA, 10 MHz Carrier Spacing
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
Gps
13.2
13
IM3
34
−24
−26
−28
12.8
12.6
−30
ACPR
12.4
−32
12.2
2060 2080
IRL
2100 2120
2140
2160
2180 2200
−9
−10
−11
−12
−13
−34
2220 2240
−14
IRL, INPUT RETURN LOSS (dB)
37
ηD
13.8
13.4
ηD, DRAIN
EFFICIENCY (%)
14
IM3 (dBc), ACPR (dBc)
14.2
f, FREQUENCY (MHz)
Figure 4. 2 - Carrier W - CDMA Broadband Performance @ Pout = 45 Watts Avg.
16
−10
1312 mA
15
Gps, POWER GAIN (dB)
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
IDQ = 1575 mA
1050 mA
14
787 mA
13
12
11
10
525 mA
VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two −Tone Measurements, 10 MHz Tone Spacing
0.1
1
10
100
300
VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two −Tone Measurements, 10 MHz Tone Spacing
−20
1575 mA
−30
IDQ = 525 mA
−40
1312 mA
−50
1050 mA
787 mA
−60
0.1
1
10
100
300
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF6S21100NR1 MRF6S21100NBR1
RF Device Data
Freescale Semiconductor
5
0
58
Ideal
VDD = 28 Vdc, Pout = 100 W (PEP)
IDQ = 1050 mA, Two −Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
−10
Pout , OUTPUT POWER (dBm)
−20
3rd Order
−30
−40
5th Order
−50
56
P3dB = 51.9 dBm (156.3 W)
54
P1dB = 51.3 dBm (135.8 W)
Actual
52
VDD = 28 Vdc, IDQ = 1050 mA
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 2140 MHz
50
7th Order
−60
0.1
48
1
10
100
300
32
34
36
TWO −TONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
38
35
30
25
20
TC = 25_C
−40
IM3
Gps
15
−45
−30_C
10
46
−55
0
0.5
44
−50
85_C
25_C
5
42
Figure 8. Pulsed CW Output Power versus
Input Power
−20
VDD = 28 Vdc, IDQ = 1050 mA, f1 = 2135 MHz −30_C
25_C
−25
f2 = 2145 MHz, 2−Carrier W−CDMA
ηD
10 MHz Carrier Spacing, 3.84 MHz
25_C
Channel Bandwidth, PAR = 8.5 dB
−30_C −30
@ 0.01% Probability (CCDF)
85_C
−35
ACPR
40
40
Pin, INPUT POWER (dBm)
1
IM3 (dBc), ACPR (dBc)
IMD, INTERMODULATION DISTORTION (dBc)
TYPICAL CHARACTERISTICS
−60
100
10
Pout, OUTPUT POWER (WATTS) AVG.
Figure 9. 2 - Carrier W - CDMA ACPR, IM3,
Power Gain and Drain Efficiency
versus Output Power
Gps, POWER GAIN (dB)
17
−30_C
25_C
16
Gps
TC = −30_C
85_C
15
70
15
60
14
50
40
25_C
14
30
85_C
Gps, POWER GAIN (dB)
VDD = 28 Vdc
IDQ = 1050 mA
f = 2140 MHz
ηD, DRAIN EFFICIENCY (%)
18
13
12
32 V
13
20
12
10
10
0
9
ηD
11
0.1
1
10
100
300
28 V
11
VDD = 24 V
IDQ = 1050 mA
f = 2140 MHz
0
20
40
60
80
100
120
140
160
180 200
Pout, OUTPUT POWER (WATTS) CW
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
Figure 11. Power Gain versus Output Power
MRF6S21100NR1 MRF6S21100NBR1
6
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
MTTF (HOURS)
108
107
106
105
90
110
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, Pout = 23 W Avg., and ηD = 25.5%.
MTTF calculator available at http:/www.freescale.com/rf. Select Tools/
Software/Application Software/Calculators to access the MTTF calcu−
lators by product.
Figure 12. MTTF versus Junction Temperature
W - CDMA TEST SIGNAL
100
+20
3.84 MHz
Channel BW
+30
0
−10
1
(dB)
PROBABILITY (%)
10
0.1
−20
−30
−40
0.01
W−CDMA. ACPR Measured in 3.84 MHz Channel
Bandwidth @ ±5 MHz Offset. IM3 Measured in
3.84 MHz Bandwidth @ ±10 MHz Offset. PAR =
8.5 dB @ 0.01% Probability on CCDF
0.001
−50
0.0001
0
2
4
6
−70
−ACPR in
+ACPR in
3.84 MHz BW 3.84 MHz BW
−IM3 in
3.84 MHz BW
−80
−25
−20
−60
8
10
PEAK −TO−AVERAGE (dB)
Figure 13. CCDF W - CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single - Carrier Test Signal
−15
−10
−5
0
5
10
+IM3 in
3.84 MHz BW
15
20
25
f, FREQUENCY (MHz)
Figure 14. 2-Carrier W-CDMA Spectrum
MRF6S21100NR1 MRF6S21100NBR1
RF Device Data
Freescale Semiconductor
7
Zo = 5 Ω
Zo = 5 Ω
f = 2110 MHz
Zsource
Zsource
f = 2170 MHz
Zload
f = 2170 MHz
f = 2170 MHz
f = 2170 MHz
f = 2110 MHz
Zload
f = 2110 MHz
f = 2110 MHz
MRF6S21100NR1
MRF6S21100NBR1
VDD = 28 Vdc, IDQ = 1050 mA, Pout = 23 W Avg.
VDD = 28 Vdc, IDQ = 1050 mA, Pout = 23 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
f
MHz
Zsource
Ω
Zload
Ω
2110
3.51 - j3.78
1.62 - j3.54
2110
3.56 - j3.92
1.62 - j3.47
2140
3.50 - j3.83
1.51 - j3.26
2140
3.55 - j3.97
1.53 - j3.19
2170
3.29 - j3.78
1.41 - j2.95
2170
3.34 - j3.90
1.44 - j2.89
Zsource = Test circuit impedance as measured from
gate to gate, balanced configuration.
Zload
= Test circuit impedance as measured
from drain to drain, balanced configuration.
Device
Under
Test
Input
Matching
Network
Z
source
Output
Matching
Network
Z
load
Figure 15. Series Equivalent Source and Load Impedance
MRF6S21100NR1 MRF6S21100NBR1
8
RF Device Data
Freescale Semiconductor
TD - SCDMA CHARACTERIZATION
R1
B1
VBIAS
VSUPPLY
+
C1
R2
C2
C3
R3
C4
Z4
C5
C6
Z11
RF
INPUT
Z5
Z1
Z2
Z6
Z7
Z8
Z3
Z9
RF
OUTPUT
C9
Z10
C7
C8
DUT
VSUPPLY
C10
Z1
Z2
Z3
Z4
Z5
Z6
1.250″
0.930″
0.470″
0.090″
1.500″
0.160″
x 0.084″
x 0.084″
x 0.800″
x 0.800″
x 0.040″
x 0.880″
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Z7
Z8
Z9
Z10
Z11
PCB
C11
C12
0.320″ x 0.880″ Microstrip
0.370″ x 0.200″ Microstrip
0.650″ x 0.084″ Microstrip
1.230″ x 0.084″ Microstrip
0.870″ x 0.120″ Microstrip
Arlon AD250, 0.030″, εr = 2.55
Figure 16. MRF6S21100NR1(NBR1) Test Circuit Schematic
Table 7. MRF6S21100NR1(NBR1) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1
Ferrite Bead
25008051107Y0
Fair - Rite
C1
10 μF, 35 V Tantalum Capacitor
T491D106K035AT
Kemet
C2
0.01 μF Chip Capacitor
C1825C103J1GAC
Kemet
C3, C4, C10
5.1 pF Chip Capacitors
ATC600B5R1BT250XT
ATC
C5, C6, C11, C12
10 μF, 50 V Chip Capacitors
GRM55DR61H106KA88L
Murata
C7
10 pF Chip Capacitor
ATC600B100BT250XT
ATC
C8
1.1 pF Chip Capacitor
ATC600B1R1BT250XT
ATC
C9
8.2 pF Chip Capacitor
ATC600B8R2BT250XT
ATC
R1
1 kΩ, 1/4 W Chip Resistor
CRCW12061000FKTA
Vishay
R2
10 kΩ, 1/4 W Chip Resistor
CRCW12061001FKTA
Vishay
R3
10 Ω, 1/4 W Chip Resistor
CRCW120610R0FKTA
Vishay
MRF6S21100NR1 MRF6S21100NBR1
RF Device Data
Freescale Semiconductor
9
B1 R3
C3
C4
R1
R2
C2
C5
C7
C8
CUT OUT AREA
C1
C6
C9
C11 C12
MRF6S21100N/NB, Rev. 3
C10
Figure 17. MRF6S21100NR1(NBR1) Test Circuit Component Layout — TD - SCDMA
MRF6S21100NR1 MRF6S21100NBR1
10
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
−30
18
3−Carrier TD−SCDMA
VDD = 28 V, IDQ = 900 mA
f = 2017.5 MHz
ηD
15
Adj −L
−40
12
9
−45
Alt−L
6
−50
3
−55
ηD, DRAIN EFFICIENCY (%)
ALT/ACPR (dBc)
−35
Adj −U
Alt−U
−60
0
0
1
3
2
4
5
6
7
9
8
Pout, OUTPUT POWER (WATTS) AVG.
Figure 18. 3 - Carrier TD - SCDMA ACPR, ALT and
Drain Efficiency versus Output Power
−30
18
ALT/ACPR (dBc)
−35
ηD
15
12
−40
Adj −U
Alt−L
Adj −L
−45
9
−50
6
−55
3
Alt−U
−60
0.5
ηD, DRAIN EFFICIENCY (%)
6−Carrier TD−SCDMA
VDD = 28 V, IDQ = 900 mA
f = 2017.5 MHz
0
1.5
2.5
3.5
4.5
5.5
6.5
7.5
Pout, OUTPUT POWER (WATTS) AVG.
Figure 19. 6 - Carrier TD - SCDMA ACPR, ALT and
Drain Efficiency versus Output Power
TD - SCDMA TEST SIGNAL
−30
−30
1.28 MHz
Channel BW
−40
−50
−50
−60
−70
+ALT2 in
1.28 MHz BW
+3.2 MHz Offset
−ALT2 in
1.28 MHz BW
−3.2 MHz Offset
−80
−90
−100
−ALT2 in
1.28 MHz BW
−3.2 MHz Offset
+ALT2 in
1.28 MHz BW
+3.2 MHz Offset
−100
−110
−120
(dBm)
(dBm)
−90
VBW = 300 kHz
Sweep Time = 200 ms
RBW = 30 kHz
−60
−70
−80
1.28 MHz
Channel BW
−40
VBW = 300 kHz
Sweep Time = 200 ms
RBW = 30 kHz
−110
+ALT1 in
1.28 MHz BW
+1.6 MHz Offset
−ALT1 in
1.28 MHz BW
−1.6 MHz Offset
−130
Center 2.0175 GHz
1.5 MHz
Span 15 MHz
f, FREQUENCY (MHz)
Figure 20. 3 - Carrier TD - SCDMA Spectrum
−120
−ALT1 in
1.28 MHz BW
−1.6 MHz Offset
−130
Center 2.0175 GHz
+ALT1 in
1.28 MHz BW
+1.6 MHz Offset
2.5 MHz
Span 25 MHz
f, FREQUENCY (MHz)
Figure 21. 6 - Carrier TD - SCDMA Spectrum
MRF6S21100NR1 MRF6S21100NBR1
RF Device Data
Freescale Semiconductor
11
Zo = 10 Ω
f = 1950 MHz
f = 2070 MHz
Zload
f = 1950 MHz
f = 2070 MHz
Zsource
VDD = 28 Vdc, IDQ = 900 mA
f
MHz
Zsource
W
Zload
W
1950
1.43 - j4.56
3.61 - j4.19
1960
1.57 - j4.80
3.86 - j4.40
1970
1.72 - j5.12
4.18 - j4.62
1980
1.65 - j5.27
4.21 - j4.81
1990
1.48 - j4.98
3.91 - j4.59
2000
1.38 - j4.45
3.56 - j4.07
2010
1.35 - j4.01
3.31 - j3.62
2020
1.30 - j3.57
3.14 - j3.40
2030
1.21 - j3.62
2.99 - j3.31
2040
1.25 - j3.61
3.02 - j3.31
2050
1.34 - j3.76
3.19 - j3.44
2060
1.37 - j4.08
3.38 - j3.75
2070
1.24 - j4.24
3.33 - j3.99
Zsource = Device input impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 22. Series Equivalent Source and Load Impedance — TD - SCDMA
MRF6S21100NR1 MRF6S21100NBR1
12
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
E1
B
A
2X
E3
GATE LEAD
DRAIN LEAD
D
D1
4X
e
4X
b1
aaa M C A
2X
2X
D2
c1
E
H
DATUM
PLANE
F
ZONE J
A
A1
2X
A2
E2
NOTE 7
E5
E4
4
D3
3
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
ÇÇÇÇÇÇ
E5
BOTTOM VIEW
C
SEATING
PLANE
PIN 5
NOTE 8
1
2
CASE 1486 - 03
ISSUE C
TO - 270 WB - 4
PLASTIC
MRF6S21100NR1
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.
3. DATUM PLANE −H− IS LOCATED AT THE TOP OF
LEAD AND IS COINCIDENT WITH THE LEAD
WHERE THE LEAD EXITS THE PLASTIC BODY AT
THE TOP OF THE PARTING LINE.
4. DIMENSIONS “D" AND “E1" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS “D" AND “E1" DO
INCLUDE MOLD MISMATCH AND ARE DETER−
MINED AT DATUM PLANE −H−.
5. DIMENSION “b1" DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE “b1" DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. DATUMS −A− AND −B− TO BE DETERMINED AT
DATUM PLANE −H−.
7. DIMENSION A2 APPLIES WITHIN ZONE “J" ONLY.
8. HATCHING REPRESENTS THE EXPOSED AREA
OF THE HEAT SLUG.
DIM
A
A1
A2
D
D1
D2
D3
E
E1
E2
E3
E4
E5
F
b1
c1
e
aaa
INCHES
MIN
MAX
.100
.104
.039
.043
.040
.042
.712
.720
.688
.692
.011
.019
.600
−−−
.551
.559
.353
.357
.132
.140
.124
.132
.270
−−−
.346
.350
.025 BSC
.164
.170
.007
.011
.106 BSC
.004
STYLE 1:
PIN 1.
2.
3.
4.
5.
MILLIMETERS
MIN
MAX
2.54
2.64
0.99
1.09
1.02
1.07
18.08
18.29
17.48
17.58
0.28
0.48
15.24
−−−
14
14.2
8.97
9.07
3.35
3.56
3.15
3.35
6.86
−−−
8.79
8.89
0.64 BSC
4.17
4.32
0.18
0.28
2.69 BSC
0.10
DRAIN
DRAIN
GATE
GATE
SOURCE
MRF6S21100NR1 MRF6S21100NBR1
RF Device Data
Freescale Semiconductor
13
MRF6S21100NR1 MRF6S21100NBR1
14
RF Device Data
Freescale Semiconductor
MRF6S21100NR1 MRF6S21100NBR1
RF Device Data
Freescale Semiconductor
15
MRF6S21100NR1 MRF6S21100NBR1
16
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
2
Jan. 2007
Description
• Added “TD - SCDMA” to data sheet description paragraph, p. 1
• Removed Total Device Dissipation from Max Ratings table as data was redundant (information already
provided in Thermal Characteristics table), p. 1
• Added VGG(Q) and removed Min and Max value for VGS(Q) in On Characteristics table to account for the
test fixture’s resistor divider network, p. 2
• Removed Forward Transconductance from On Characteristics table as it no longer provided usable
information, p. 2
• Updated Part Numbers in Table 6, Component Designations and Values, to RoHS compliant part numbers,
p. 3
• Adjusted scale for Fig. 5, Two - Tone Power Gain versus Output Power, to better match the device’s
capabilities, p. 5
• Removed lower voltage tests from Fig. 11, Power Gain versus Output Power, due to fixed tuned fixture
limitations, p. 6
• Replaced Fig. 12, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed
operating characteristics and location of MTTF calculator for device, p. 7
• Added TD - SCDMA test circuit schematic, component designations and values, component layout, typical
characteristic curves, test signal and series impedance, p. 9 - 12
• Added Product Documentation and Revision History, p. 17
MRF6S21100NR1 MRF6S21100NBR1
RF Device Data
Freescale Semiconductor
17
How to Reach Us:
Home Page:
www.freescale.com
Web Support:
http://www.freescale.com/support
USA/Europe or Locations Not Listed:
Freescale Semiconductor, Inc.
Technical Information Center, EL516
2100 East Elliot Road
Tempe, Arizona 85284
+1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130
www.freescale.com/support
Europe, Middle East, and Africa:
Freescale Halbleiter Deutschland GmbH
Technical Information Center
Schatzbogen 7
81829 Muenchen, Germany
+44 1296 380 456 (English)
+46 8 52200080 (English)
+49 89 92103 559 (German)
+33 1 69 35 48 48 (French)
www.freescale.com/support
Japan:
Freescale Semiconductor Japan Ltd.
Headquarters
ARCO Tower 15F
1 - 8 - 1, Shimo - Meguro, Meguro - ku,
Tokyo 153 - 0064
Japan
0120 191014 or +81 3 5437 9125
[email protected]
Asia/Pacific:
Freescale Semiconductor Hong Kong Ltd.
Technical Information Center
2 Dai King Street
Tai Po Industrial Estate
Tai Po, N.T., Hong Kong
+800 2666 8080
[email protected]
For Literature Requests Only:
Freescale Semiconductor Literature Distribution Center
P.O. Box 5405
Denver, Colorado 80217
1 - 800 - 441 - 2447 or 303 - 675 - 2140
Fax: 303 - 675 - 2150
[email protected]
Information in this document is provided solely to enable system and software
implementers to use Freescale Semiconductor products. There are no express or
implied copyright licenses granted hereunder to design or fabricate any integrated
circuits or integrated circuits based on the information in this document.
Freescale Semiconductor reserves the right to make changes without further notice to
any products herein. Freescale Semiconductor makes no warranty, representation or
guarantee regarding the suitability of its products for any particular purpose, nor does
Freescale Semiconductor assume any liability arising out of the application or use of
any product or circuit, and specifically disclaims any and all liability, including without
limitation consequential or incidental damages. “Typical” parameters that may be
provided in Freescale Semiconductor data sheets and/or specifications can and do
vary in different applications and actual performance may vary over time. All operating
parameters, including “Typicals”, must be validated for each customer application by
customer’s technical experts. Freescale Semiconductor does not convey any license
under its patent rights nor the rights of others. Freescale Semiconductor products are
not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life,
or for any other application in which the failure of the Freescale Semiconductor product
could create a situation where personal injury or death may occur. Should Buyer
purchase or use Freescale Semiconductor products for any such unintended or
unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all
claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such
unintended or unauthorized use, even if such claim alleges that Freescale
Semiconductor was negligent regarding the design or manufacture of the part.
Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc.
All other product or service names are the property of their respective owners.
© Freescale Semiconductor, Inc. 2007. All rights reserved.
MRF6S21100NR1 MRF6S21100NBR1
Document Number: MRF6S21100N
Rev. 2, 1/2007
18
RF Device Data
Freescale Semiconductor