MITSUBISHI MGF1954A

Aug. /2004
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGF1954A
Microwave Power MES FET (Leadless Ceramic Package)
DESCRIPTION
Outline Drawing
The MGF1954A is designed for use in S to Ku band power
amplifiers.
The lead-less ceramic package assures minimum parasitic losses.
FEATURES
High gain and High P1dB
Glp=5.0dB , P1dB=23dBm (Typ.) @ f=12GHz
Fig.1
APPLICATION
S to Ku band power Amplifiers
QUALITY GRADE
GG
RECOMMENDED BIAS CONDITION
VDS=6V, ID=100mA
ORDERING INFORMATION
Tape & reel
3000pcs./reel
Keep Safety first in your circuit designs!
ABSOLUTE MAXIMUM RATINGS
Symbol
VGDO
(Ta=25°C )
Ratings
Unit
Gate to drain voltage
-10
V
Gate to source voltage
-10
V
ID
Drain current
400
mA
PT
Tch
Total power dissipation
Tstg
VGSO
Parameter
1
W
Channel temperature
125
°C
Storage temperature
-65 to +125
°C
ELECTRICAL CHARACTERISTICS
Synbol
Parameter
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
(Ta=25°C )
Test conditions
Limits
MIN.
V(BR)GDO
IDSS
VGS(off)
Po
Glp
TYP.
Unit
MAX
Ig=-100µA
VGS=0V,VDS=3V
-10
-15
--
V
Saturated drain current
105
200
400
mA
Gate to source cut-off voltage
VDS=3V,ID=1mA
-0.3
-1.4
-3.5
V
Output Power at 1dB gain
VDS=6V,ID=100mA
21
23
--
dBm
compression
f=12GHz
VDS=6V,ID=100mA
3
5
--
dB
Gate to drain breakdown voltage
Linear Power Gain
f=12GHz,Pin=5dBm
MITSUBISHI
(1/5)
Aug./2004
Aug. /2004
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGF1954A
Microwave Power MES FET (Leadless Ceramic Package)
Fig.1
Unit : mm
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MITSUBISHI
(2/5)
Aug./2004
Aug. /2004
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGF1954A
Microwave Power MES FET (Leadless Ceramic Package)
TYPICAL CHARACTERISTICS
(Ta=25°C)
I D vs. VDS
I D vs. VGS
300
Ta=25deg.C
VGS=-0.2V/STEP
Ta=25deg.C
VDS=6V
DRAIN CURRENTID(mA)
DRAIN CURRENT ID(mA)
250
VGS=0V
200
150
100
50
0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0 10.0
-3.0
DRAIN TO SOURCE VOLTAGE V DS(V)
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
GATE TO SOURCE VOLTAGEVGS(V)
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MITSUBISHI
(3/5)
Aug./2004
Aug. /2004
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGF1954A
Microwave Power MES FET (Leadless Ceramic Package)
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MITSUBISHI
(4/5)
Aug./2004
Aug. /2004
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGF1954A
Microwave Power MES FET (Leadless Ceramic Package)
Requests Regarding Safety Designs
Mitsubishi Electric constantly strives to raise the level of its quality and reliability. Despite these concerted efforts,
however, there will be occasions when our semiconductor products suffer breakdowns, malfunctions or other problems.
In view of this reality, it is requested that every feasible precaution be taken in the pursuit of redundancy design,
malfunction prevention design and other safety-related designs, to prevent breakdowns or malfunctions in our products
from resulting in accidents involving people, fires, social losses or other problems, thereby upholding the highest levels of
safety in the products when in use by customers.
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MITSUBISHI
(5/5)
Aug./2004