MITSUBISHI SEMICONDUTOR <GaAs FET> 18/May/2007 MGF4941AL SUPER LOW NOISE InGaAs HEMT DESCRIPTION Outline Drawing The MGF4941AL super-low noise HEMT (High Electron Mobility Transistor) is designed for use in Ku band amplifiers. FEATURES Low noise figure @ f=12GHz NFmin. = 0.35dB (Typ.) Fig.1 High associated gain @ f=12GHz Gs = 13.5dB (Typ.) APPLICATION L to K band low noise amplifiers QUALITY GRADE GG GD-32 RECOMMENDED BIAS CONDITIONS VDS=2V , ID=10mA MITSUBISHI Proprietary Not to be reproduced or disclosed without permission by Mitsubishi Electric ORDERING INFORMATION Tape & reel 4000pcs./reel ABSOLUTE MAXIMUM RATINGS Symbol VGDO VGSO Parameter Gate to drain voltage Gate to source voltage Ratings Unit -4 V -4 V mA Total power dissipation 50 mW Channel temperature 125 °C -55 to +125 °C Drain current PT Tch Tstg Storage temperature ELECTRICAL CHARACTERISTICS V(BR)GDO (Ta=25°C ) IDSS ID Synbol Keep Safety first in your circuit designs! Parameter Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable , but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury , fire or property damage. Remember to give due consideration to safety when making your circuit designs , with appropriate measure such as (I) placement of substitutive , auxiliary circuits , (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. (Ta=25°C ) Test conditions Limits Unit MIN. TYP. MAX -3 -- -- Gate to drain breakdown voltage IG=-10µA IGSS Gate to source leakage current VGS=-2V,VDS=0V -- -- 50 µA IDSS Saturated drain current VGS=0V,VDS=2V 15 -- 60 mA Gate to source cut-off voltage VDS=2V,ID=500µA -0.1 -- -1.5 V Associated gain VDS=2V,ID=10mA 12.0 13.5 -- dB Minimum noise figure f=12GHz -- 0.35 0.5 dB VGS(off) Gs NFmin. MITSUBISHI (1/6) V MITSUBISHI SEMICONDUTOR <GaAs FET> 18/May/2007 MGF4941AL SUPER LOW NOISE InGaAs HEMT Fig.1 3.2±0.1 (0.30) Top 2.6±0.1 (0.30) Bottom 0.5±0.1 (2.3) (2.3) 3.2±0.1 ② (0.30) ② 2.6±0.1 Ac AA 0.65±0.1 (0.30) ① ③ 2.2±0.1 Unit : mm 1.35±0.2 Side 0.15±0.05 1.7±0.1 ① Gate ② Source ③ Drain (GD-32) MITSUBISHI (2/6) MITSUBISHI SEMICONDUTOR <GaAs FET> 18/May/2007 MGF4941AL SUPER LOW NOISE InGaAs HEMT TYPICAL CHARACTERISTICS (Ta=25°C) ID vs. V DS 50 V GS=-0.1V/STEP VDS=2V DRAIN CURRENT, I D (mA) DRAIN CURRENT ID(mA) 50 ID vs. V GS 40 30 20 10 40 30 20 10 0 0 0 1 2 3 -1.0 Drain to Source voltage V DS(V) NF & Gs vs . ID 16 V DS=2V f=12GHz 14 Gs 0.8 12 0.6 10 NF 0.4 8 0.2 ASSOCIATED GAIN, Gs (dB) NOISE FIGURE, NF (dB) 1.2 1.0 6 0 5 10 15 -0.5 Gate to Source voltage, VGS(V) 20 DRAIN CURRENT, ID (mA) MITSUBISHI (3/6) 0.0 MITSUBISHI SEMICONDUTOR <GaAs FET> 18/May/2007 MGF4941AL SUPER LOW NOISE InGaAs HEMT S PARAMETERS (VDS=2V,ID=10mA,Ta=room temperature) Freq. (GHz) 2 4 6 8 10 12 14 16 18 20 22 Γopt (mag) 0.671 0.598 0.537 0.474 0.399 0.329 0.299 0.349 0.392 0.432 0.467 S12 (mag) (ang) 0.017 78.9 0.028 70.9 0.040 61.7 0.051 53.3 0.061 45.9 0.071 37.6 0.080 29.9 0.086 22.7 0.092 16.2 0.096 10.2 0.100 4.8 0.105 0.1 0.111 -4.7 0.115 -9.7 0.121 -14.6 0.126 -19.8 0.133 -25.5 0.140 -31.2 0.147 -37.9 0.152 -45.0 0.156 -52.4 0.156 -58.0 (VDS=2V,ID=10mA, Ta=25°C) rn NFmin (ang) (dB) 13.9 0.370 0.20 37.2 0.262 0.22 60.8 0.197 0.25 86.2 0.155 0.29 119.2 0.102 0.32 147.6 0.062 0.35 173.6 0.069 0.40 -143.9 0.083 0.49 -106.5 0.109 0.59 -73.0 0.146 0.73 -42.7 0.180 0.96 Note: rn is normarised by 50 ohm. S22 (mag) 0.637 0.626 0.610 0.586 0.572 0.538 0.502 0.456 0.408 0.359 0.311 0.267 0.221 0.182 0.152 0.134 0.139 0.183 0.251 0.309 0.363 0.411 (ang) -10.6 -21.1 -31.1 -40.5 -50.8 -60.3 -69.8 -78.6 -86.5 -93.8 -100.7 -108.9 -119.3 -135.4 -157.0 177.7 145.4 115.8 95.1 80.2 70.0 59.8 Board: εr=2.2 Thickness: 0.25mm (4-φ0.3: through-hole) Reference point Reference point (Unit: mm) 2.60 MITSUBISHI (4/6) 2.08 NOISE PARAMETERS S21 (mag) (ang) 5.497 164.6 5.416 149.6 5.278 135.0 5.172 121.5 4.932 108.0 4.959 94.1 4.826 80.4 4.732 66.8 4.587 53.6 4.403 40.5 4.140 27.8 4.010 15.6 3.782 3.3 3.653 -9.1 3.514 -21.3 3.366 -32.9 3.172 -45.3 3.049 -57.7 2.877 -70.2 2.641 -81.3 2.470 -91.5 2.311 -102.3 1.30 S11 (mag) (ang) 0.989 -13.9 0.967 -28.2 0.929 -41.5 0.882 -54.4 0.822 -65.9 0.757 -79.5 0.686 -93.3 0.611 -108.8 0.533 -125.1 0.463 -143.6 0.411 -164.1 0.382 174.7 0.378 152.3 0.395 131.4 0.435 113.6 0.486 99.0 0.543 86.2 0.603 73.7 0.663 61.2 0.704 50.1 0.746 40.5 0.778 32.3 0.74 Freq. (GHz) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 (1.0mm) MITSUBISHI SEMICONDUTOR <GaAs FET> 18/May/2007 MGF4941AL SUPER LOW NOISE InGaAs HEMT S PARAMETERS (VDS=0V,VGS=0V,Ta=room temperature) Freq. (GHz) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 S11 (mag) (ang) 0.996 -12.6 0.998 -25.4 0.988 -38.1 0.984 -50.8 0.971 -62.6 0.963 -77.1 0.949 -92.8 0.936 -110.9 0.915 -131.2 0.892 -153.9 0.878 -178.2 0.870 157.5 0.868 133.9 0.875 113.0 0.883 94.9 0.895 79.7 0.901 66.6 0.912 54.7 0.923 43.8 0.934 34.0 0.947 25.0 0.945 17.6 S21 (mag) (ang) 0.008 90.7 0.019 92.4 0.032 90.0 0.048 86.4 0.068 80.5 0.092 72.6 0.119 62.9 0.149 51.8 0.181 39.2 0.211 25.5 0.235 10.8 0.252 -3.9 0.258 -18.6 0.257 -32.0 0.250 -44.4 0.238 -55.0 0.225 -64.2 0.213 -72.0 0.205 -78.8 0.201 -85.1 0.195 -92.1 0.188 -98.3 S12 (mag) (ang) 0.008 93.1 0.019 92.2 0.032 90.6 0.048 86.3 0.069 81.0 0.092 72.7 0.120 62.9 0.150 52.2 0.182 39.5 0.211 25.9 0.237 11.1 0.252 -3.9 0.259 -18.6 0.257 -32.0 0.249 -44.1 0.238 -54.9 0.225 -64.0 0.215 -71.8 0.205 -78.7 0.202 -85.5 0.193 -92.7 0.188 -98.5 S22 (mag) 0.700 0.696 0.703 0.708 0.710 0.718 0.730 0.739 0.750 0.760 0.769 0.785 0.795 0.805 0.815 0.824 0.833 0.845 0.856 0.861 0.859 0.854 (ang) 167.0 154.5 142.2 129.1 117.1 104.8 92.6 81.3 70.7 60.8 51.6 42.8 34.7 26.9 19.2 11.6 5.2 0.1 -3.7 -8.4 -13.1 -18.2 S12 (mag) (ang) 0.023 79.5 0.045 71.9 0.067 63.2 0.089 54.7 0.110 46.5 0.132 37.5 0.158 28.7 0.184 18.6 0.210 8.5 0.238 -2.7 0.264 -14.8 0.289 -27.8 0.312 -42.2 0.327 -58.7 0.325 -76.6 0.306 -95.4 0.271 -114.4 0.220 -131.6 0.172 -144.9 0.136 -160.2 0.090 -176.6 0.049 171.4 S22 (mag) 0.998 0.990 0.995 0.993 0.993 0.985 0.982 0.970 0.962 0.956 0.945 0.932 0.921 0.914 0.909 0.911 0.916 0.924 0.926 0.939 0.961 0.968 (ang) -9.2 -18.6 -27.7 -36.7 -46.8 -56.3 -65.6 -75.4 -85.2 -95.5 -106.4 -118.6 -132.8 -149.6 -167.8 173.5 153.5 133.0 114.9 99.3 84.2 69.8 (VDS=0V,VGS=-2.5V,Ta=room temperature) Freq. (GHz) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 S11 (mag) (ang) 1.003 -8.2 0.998 -16.7 0.994 -24.6 0.991 -32.2 0.986 -38.9 0.983 -46.7 0.977 -54.4 0.972 -63.3 0.963 -72.7 0.950 -83.2 0.938 -94.7 0.929 -107.7 0.916 -121.9 0.911 -137.5 0.904 -155.7 0.903 -175.3 0.910 163.6 0.914 142.1 0.912 121.4 0.927 103.4 0.955 87.0 0.971 72.1 S21 (mag) (ang) 0.022 80.5 0.045 72.1 0.067 62.9 0.088 54.8 0.109 46.3 0.133 37.4 0.157 28.6 0.183 18.8 0.211 8.3 0.237 -2.6 0.263 -14.9 0.289 -27.8 0.310 -42.3 0.326 -58.6 0.324 -76.7 0.305 -95.2 0.269 -114.1 0.219 -131.5 0.172 -145.0 0.136 -160.1 0.089 -178.2 0.048 167.9 MITSUBISHI (5/6) MITSUBISHI SEMICONDUTOR <GaAs FET> 18/May/2007 MGF4941AL SUPER LOW NOISE InGaAs HEMT Requests Regarding Safety Designs Mitsubishi Electric constantly strives to raise the level of its quality and reliability. Despite these concerted efforts, however, there will be occasions when our semiconductor products suffer breakdowns, malfunctions or other problems. In view of this reality, it is requested that every feasible precaution be taken in the pursuit of redundancy design, malfunction prevention design and other safety-related designs, to prevent breakdowns or malfunctions in our products from resulting in accidents involving people, fires, social losses or other problems, thereby upholding the highest levels of safety in the products when in use by customers. Matters of Importance when Using these Materials 1. These materials are designed as reference materials to ensure that all customers purchase Mitsubishi Electric semiconductors best suited to their specific use applications. Please be aware, however, that the technical information contained in these materials does not comprise consent for the execution or use of intellectual property rights or other rights owned by Mitsubishi Electric Corporation. 2. 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