MITSUBISHI MGF4953A

June/2004
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGF4953A/MGF4954A
SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package)
DESCRIPTION
Outline Drawing
The MGF4953A/MGF4954A super-low noise HEMT (High
Electron Mobility Transistor) is designed for use in C to K band
amplifiers.
The lead-less ceramic package assures minimum parasitic losses.
FEATURES
Low noise figure
@ f=12GHz
MGF4953A : NFmin. = 0.40dB (Typ.)
MGF4954A : NFmin. = 0.60dB (Typ.)
Fig.1
High associated gain
@ f=12GHz
Gs = 13.5dB (Typ.)
MITSUBISHI Proprietary
APPLICATION
Not to be reproduced or disclosed
without permission by Mitsubishi Electric
C to K band low noise amplifiers
QUALITY GRADE
GG
RECOMMENDED BIAS CONDITIONS
VDS=2V , ID=10mA
ORDERING INFORMATION
Tape & reel
3000pcs./reel
Keep Safety first in your circuit designs!
ABSOLUTE MAXIMUM RATINGS
Symbol
VGDO
(Ta=25°C )
Ratings
Unit
Gate to drain voltage
-4
V
Gate to source voltage
-4
V
ID
Drain current
60
mA
PT
Tch
Total power dissipation
50
mW
Channel temperature
125
°C
Tstg
Storage temperature
-65 to +125
°C
VGSO
Parameter
ELECTRICAL CHARACTERISTICS
Synbol
V(BR)GDO
Parameter
(Ta=25°C )
Test conditions
Unit
TYP.
MAX
-3
--
--
VGS=-2V,VDS=0V
--
--
50
µA
VGS=0V,VDS=2V
15
--
60
mA
-0.1
--
-1.5
V
--
70
--
mS
12.0
13.5
--
dB
MGF4953A
--
0.40
0.50
dB
MGF4954A
--
0.60
0.80
dB
IG=-10µA
IGSS
Gate to source leakage current
IDSS
Saturated drain current
Gate to source cut-off voltage
VDS=2V,ID=500µA
gm
Transconductance
VDS=2V,ID=10mA
Gs
Associated gain
VDS=2V,
Minimum noise figure
ID=10mA
f=12GHz
NFmin.
Limits
MIN.
Gate to drain breakdown voltage
VGS(off)
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
V
MITSUBISHI
(1/5)
June/2004
June/2004
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGF4953A/MGF4954A
SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package)
Fig.1
Unit : mm
Top
Side
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Square shape electrode is Drain
‰…Š‡€
from "A" side view
rw Gate
sw Source
tw Drain
MITSUBISHI
(2/5)
June/2004
June/2004
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGF4953A/MGF4954A
SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package)
TYPICAL CHARACTERISTICS
ID V S . V GS
ID vs . V DS
60
Ta=25
`
Ta=25
DRAIN CURRENT ID(mA)
V GS =-0.1V /STEP
`
V D S=2V
„§_®y ID(m A )
50
40
y
DRAIN
CURRENT
ID(mA)
„§_®
w ID(m A )
(Ta=25°C)
30
20
10
0
0
1
2
3
4
Fö
-1.0
5
t VOLTAGE
ww V DS (V ) VDS(V)
DRAIN„§_®¶x·
TO SOURCE
%o;0n ,o
-0.5
Fö
0.0
V GS(V ) VGS(V)
GATE TO SOURCE VOLTAGE
NF & Gs V S. ID
(MGF4953A )
`
Ta=25
f =12GHz
V D S=2V
)U
¸ ¨ÊÑç
0(
)U
F$
ASSOCIATED GAIN
Gs(dB)
¸ 0™ NF (dB)
NOISE FIGURE NF(dB)
y
ID (mA ) ID(mA)
DRAIN
CURRENT
„§_®
MITSUBISHI
(3/5)
June/2004
June/2004
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGF4953A/MGF4954A
SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package)
S PARAMETERS
Freq
(GHz)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
(Ta=25°C,VDS=2V,ID=10mA)
S11
(mag)
0.911
0.894
0.875
0.858
0.830
0.797
0.770
0.751
0.727
0.713
0.686
0.636
0.590
0.538
0.507
0.506
0.552
0.625
0.696
0.745
0.791
0.794
0.776
0.802
0.796
0.799
S21
(ang)
-12.7
-29.2
-40.7
-53.9
-66.5
-77.7
-87.0
-94.2
-103.0
-110.8
-119.9
-132.8
-146.6
-165.8
170.2
140.8
110.4
86.0
65.9
50.8
38.2
28.2
18.4
11.0
2.9
-8.5
NOISE PARAMETERS
f
(GHz)
4
8
12
14
18
20
(mag)
4.924
4.806
4.796
4.672
4.524
4.308
4.114
3.984
3.886
3.881
3.886
3.937
4.078
4.163
4.239
4.238
4.067
3.791
3.428
3.045
2.677
2.281
1.984
1.828
1.626
1.424
S12
(ang)
168.1
155.3
142.7
131.6
121.2
109.5
101.1
90.8
81.4
75.0
66.0
54.7
45.0
31.5
18.9
4.5
-10.5
-26.5
-40.5
-54.3
-66.5
-76.2
-84.5
-93.8
-102.1
-114.5
(mag)
0.008
0.031
0.043
0.061
0.066
0.073
0.080
0.089
0.090
0.101
0.110
0.120
0.127
0.136
0.144
0.151
0.151
0.145
0.137
0.118
0.109
0.102
0.091
0.078
0.071
0.064
S22
(ang)
70.3
68.8
62.2
49.4
42.9
33.5
26.2
22.1
17.4
9.2
2.2
-4.6
-13.0
-25.2
-35.8
-48.2
-62.0
-74.0
-85.8
-97.6
-106.8
-114.0
-118.9
-127.7
-130.2
-138.3
(mag)
0.709
0.691
0.682
0.652
0.639
0.631
0.628
0.625
0.624
0.628
0.612
0.581
0.540
0.485
0.396
0.283
0.159
0.076
0.164
0.271
0.375
0.455
0.539
0.607
0.675
0.730
(ang)
-10.7
-22.7
-30.1
-41.7
-49.6
-58.5
-64.4
-71.0
-76.1
-80.4
-87.5
-94.3
-101.0
-112.5
-122.4
-137.3
-162.3
120.8
54.1
31.6
20.9
14.3
8.5
5.7
2.1
0.9
(Ta=25°C,VDS=2V,ID=10mA)
Gamma-opt
Magn.
Angle
0.64
52.7
0.61
103.5
0.55
146.4
0.51
161.9
0.41
175.3
0.35
-177.3
Rn
(ohm)
0.27
0.15
0.06
0.04
0.03
0.05
NFmin.
(dB)
0.22
0.28
0.35
0.39
0.48
0.55
Gs
(dB)
18.3
15.9
13.5
12.5
11.0
10.5
Note) Rn is normalized by 50-ohm
Gate
Source
Reference Point
Reference Point
Drain
Source
MITSUBISHI
(4/5)
June/2004
June/2004
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGF4953A/MGF4954A
SUPER LOW NOISE InGaAs HEMT (Leadless Ceramic Package)
Requests Regarding Safety Designs
Mitsubishi Electric constantly strives to raise the level of its quality and reliability. Despite these concerted efforts, however,
there will be occasions when our semiconductor products suffer breakdowns, malfunctions or other problems. In view of this
reality, it is requested that every feasible precaution be taken in the pursuit of redundancy design, malfunction prevention
design and other safety-related designs, to prevent breakdowns or malfunctions in our products from resulting in accidents
involving people, fires, social losses or other problems, thereby upholding the highest levels of safety in the products when in
use by customers.
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MITSUBISHI
(5/5)
June/2004