NTGS3433T1 MOSFET −3.3 Amps, −12 Volts P−Channel TSOP−6 http://onsemi.com Features • • • • Ultra Low RDS(on) Higher Efficiency Extending Battery Life Miniature TSOP−6 Surface Mount Package Pb−Free Package is Available V(BR)DSS RDS(on) TYP ID Max −12 V 75 mW @ −4.5 V −3.3 A P−Channel 1 2 5 6 DRAIN Applications • Power Management in Portable and Battery−Powered Products, i.e.: Cellular and Cordless Telephones, and PCMCIA Cards GATE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating Symbol Value Unit Drain−to−Source Voltage VDSS −12 Volts Gate−to−Source Voltage − Continuous VGS "8.0 Volts RqJA Pd 62.5 2.0 −3.3 °C/W Watts Amps −20 1.0 −2.35 Amps Watts Amps Thermal Resistance Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C Drain Current − Continuous @ TA = 25°C − Pulsed Drain Current (Tp t 10 mS) Maximum Operating Power Dissipation Maximum Operating Drain Current Thermal Resistance Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C Drain Current − Continuous @ TA = 25°C − Pulsed Drain Current (Tp t 10 mS) Maximum Operating Power Dissipation Maximum Operating Drain Current ID IDM Pd ID RqJA Pd 128 1.0 °C/W Watts ID IDM Pd ID −2.35 −14 0.5 −1.65 Amps Amps Watts Amps Operating and Storage Temperature Range TJ, Tstg −55 to 150 °C Maximum Lead Temperature for Soldering Purposes for 10 Seconds TL 260 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Mounted onto a 2″ square FR−4 board (1 in sq, 2 oz. Cu 0.06″ thick single sided), t t 5.0 seconds. 2. Mounted onto a 2″ square FR−4 board (1 in sq, 2 oz. Cu 0.06″ thick single sided), operating to steady state. © Semiconductor Components Industries, LLC, 2006 February, 2006 − Rev. 2 1 3 4 SOURCE MARKING DIAGRAM & PIN ASSIGNMENT Drain Drain Source 6 5 4 1 TSOP−6 CASE 318G STYLE 1 433 M G 433 M G G 1 2 3 Drain Drain Gate = Specific Device Code = Date Code* = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device NTGS3433T1 NTGS3433T1G Package Shipping† TSOP−6 3000 Tape & Reel TSOP−6 (Pb−Free) 3000 Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NTGS3433T1/D NTGS3433T1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Notes 3 & 4) Symbol Min Typ Max −12 − − − − − − −1.0 −5.0 − − −100 − − 100 −0.50 −0.70 −1.50 − − 0.055 0.075 0.075 0.095 − 7.0 − Qtot − 7.0 15 Qgs − 2.0 − Qgd − 3.5 − Ciss − 550 − Coss − 450 − Crss − 200 − td(on) − 20 30 tr − 20 30 td(off) − 110 120 tf − 100 115 (IS = −1.7 Adc, dlS/dt = 100 A/ms) trr − 30 − ns Diode Forward On−Voltage (IS = −1.7 Adc, VGS = 0 Vdc) VSD − −0.80 −1.5 Vdc Diode Forward On−Voltage (IS = −3.3 Adc, VGS = 0 Vdc) VSD − −0.90 − Vdc Characteristic Unit OFF CHARACTERISTICS V(BR)DSS Drain−Source Breakdown Voltage (VGS = 0 Vdc, ID = −10 mA) Zero Gate Voltage Drain Current (VGS = 0 Vdc, VDS = −8 Vdc, TJ = 25°C) (VGS = 0 Vdc, VDS = −8 Vdc, TJ = 70°C) IDSS Gate−Body Leakage Current (VGS = −8.0 Vdc, VDS = 0 Vdc) IGSS Gate−Body Leakage Current (VGS = +8.0 Vdc, VDS = 0 Vdc) IGSS Vdc mAdc nAdc nAdc ON CHARACTERISTICS Gate Threshold Voltage (VDS = VGS, ID = −250 mAdc) VGS(th) Static Drain−Source On−State Resistance (VGS = −4.5 Vdc, ID = −3.3 Adc) (VGS = −2.5 Vdc, ID = −2.9 Adc) RDS(on) Forward Transconductance (VDS = −10 Vdc, ID = −3.3 Adc) gFS Vdc W mhos DYNAMIC CHARACTERISTICS Total Gate Charge Gate−Source Charge Gate−Drain Charge (VDS = −10 Vdc, VGS = −4.5 Vdc, ID = −3.3 Adc) Input Capacitance Output Capacitance (VDS = −5.0 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Reverse Transfer Capacitance nC pF SWITCHING CHARACTERISTICS Turn−On Delay Time Rise Time Turn−Off Delay Time (VDD = −10 Vdc, ID = −1.0 Adc, VGS = −4.5 Vdc, Rg = 6.0 W) Fall Time Reverse Recovery Time ns BODY−DRAIN DIODE RATINGS 3. Indicates Pulse Test: P.W. = 300 msec max, Duty Cycle = 2%. 4. Class 1 ESD rated − Handling precautions to protect against electrostatic discharge are mandatory. http://onsemi.com 2 NTGS3433T1 20 VGS = −2.5 V VGS = −5 V 10 −ID, DRAIN CURRENT (AMPS) −ID, DRAIN CURRENT (AMPS) 12 VGS = −3 V VGS = −3.5 V VGS = −4 V VGS = −4.5 V 8 6 VGS = −2 V 4 TJ = 25°C 2 VGS = −1.5 V 0 0 0.25 0.5 0.75 1.25 1 1.5 VDS ≥ −10 V 18 TJ = −55°C 16 14 TJ = 25°C 12 10 TJ = 125°C 8 6 4 2 0 0.5 1.75 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 1 0.3 0.25 0.2 0.15 0.1 0.05 2 4 6 8 TJ = 25°C 0.25 0.2 VGS = −2.5 V 0.15 0.1 VGS = −4.5 V 0.05 0 0 2 4 6 8 10 12 14 16 18 20 −ID, DRAIN CURRENT (AMPS) 1200 ID = −3.3 A VGS = −4.5 V 1 0.8 −25 0 VGS = 0 V TJ = 25°C 1000 1.2 0.6 −50 4 3.5 Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1.6 1.4 3 0.3 Figure 3. On−Resistance vs. Gate−to−Source Voltage C, CAPACITANCE (pF) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID = −3.3 A TJ = 25°C 0 2.5 Figure 2. Transfer Characteristics 0.4 0 2 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 1. On−Region Characteristics 0.35 1.5 25 50 75 100 125 800 600 Ciss 400 Coss 200 Crss 0 150 0 2.5 5 7.5 10 12.5 15 17.5 TJ, JUNCTION TEMPERATURE (°C) −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Capacitance Variation http://onsemi.com 3 20 6 10 5 −IS, SOURCE CURRENT (AMPS) −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) NTGS3433T1 QT 4 3 Qgs Qgd 2 TJ = 25°C ID = −3.3 A 1 0 0 2 4 6 8 7 TJ = 150°C 6 5 4 TJ = 25°C 3 2 1 0 10 8 VGS = 0 V 9 0 Figure 7. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 0.4 0.6 0.8 1 1.2 Figure 8. Diode Forward Voltage vs. Current 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.1 1E−04 Single Pulse 1E−03 1E−02 1E−01 1E+00 1E+01 SQUARE WAVE PULSE DURATION (sec) Figure 9. Normalized Thermal Transient Impedance, Junction−to−Ambient 20 16 POWER (W) NORMALIZED EFFECTIVE TRANSIENT THERMAL IMPEDANCE 0.2 −VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Qg, TOTAL GATE CHARGE (nC) 12 8 4 0 0.01 0.10 1.00 10.00 TIME (sec) Figure 10. Single Pulse Power http://onsemi.com 4 100.00 1E+02 1E+03 NTGS3433T1 PACKAGE DIMENSIONS TSOP−6 CASE 318G−02 ISSUE P NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D 6 HE 1 5 4 2 3 E b DIM A A1 b c D E e L HE q e c A 0.05 (0.002) q L A1 MIN 0.90 0.01 0.25 0.10 2.90 1.30 0.85 0.20 2.50 0° MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.38 0.50 0.18 0.26 3.00 3.10 1.50 1.70 0.95 1.05 0.40 0.60 2.75 3.00 10° − MIN 0.035 0.001 0.010 0.004 0.114 0.051 0.034 0.008 0.099 0° INCHES NOM 0.039 0.002 0.014 0.007 0.118 0.059 0.037 0.016 0.108 − MAX 0.043 0.004 0.020 0.010 0.122 0.067 0.041 0.024 0.118 10° STYLE 1: PIN 1. DRAIN 2. DRAIN 3. GATE 4. SOURCE 5. DRAIN 6. DRAIN SOLDERING FOOTPRINT* 2.4 0.094 1.9 0.075 0.95 0.037 0.95 0.037 0.7 0.028 1.0 0.039 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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