FTD2012 N- Channel Silicon MOS FET Load S/W USE TENTATIVE Features • Low ON-state resistance. • 4V drive. • Mount height of 1.1mm. • Complex Type enabling high density mount unit Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage Drain Current(DC) Drain Current(Pulse) Allowable power Dissipation VDSS VGSS ID IDP PD Total Dissipation PT Channel Temperature Storage Temperature Tch Tstg Electrical Characteristics / Ta=25°C Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain to Source On State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate Source Charge Gate Drain Charge Diode Forward Voltage Marking : D2012 Switching Time Test Circuit 30 ±20 4.5 20 0.8 V V A A W 1.3 W 150 --55 to +150 °C °C min typ PW≤10µS, dutycycle≤1% Mounted on ceramic board (1000mm2 ✕ 0.8mm) 1unit Mounted on ceramic board (1000mm2 ✕ 0.8mm) V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on) 1 RDS(on) 2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD 1.0 6.3 9 26 43 750 170 105 12 56 73 38 18 2.3 3.2 0.8 VDS=10V, VGS=10V, ID=4.5A Electrical Connection unit V µA µA V S mΩ mΩ pF pF pF ns ns ns ns nC nC nC V 1 ±10 2.4 " " " IS=4.5A max 30 ID=1mA , VGS=0 VDS=30V , VGS=0 VGS=±16V , VDS=0 VDS=10V , ID=1mA VDS=10V , ID=4.5A ID=4.5A , VGS=10V ID=4A , VGS=4V VDS=10V , f=1MHz VDS=10V , f=1MHz VDS=10V , f=1MHz See Specified Test Circuit , VGS=0 34 60 1.2 Case Outline TSSOP8(unit:mm) VDD=15V D2 G2 8 7 6 5 0.425 0.50 D 3.0 0.65 ID=4.5A RL=3.3Ω VIN PW=10µS D.C.≤1% S2 0.95 10V 0V S2 6.4 VOUT 4.5 VIN P.G FTD2012 1 2 3 4 50Ω 0.95 G 0.25 S1 S1 G1 1.0 D1 0.1 S 0.125 1 : Drain1 2 : Source1 3 : Source1 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2 8 : Drain2 Specifications and information herein are subject to change without notice. SANYO Electric Co., Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10,1 Chome, Ueno, taito-ku, 110 JAPAN 990702TM2fXHD