KEXIN 2SK3467

MOSFET
SMD Type
MOS Field Effect Transistor
2SK3467
TO-263
+0.1
1.27-0.1
Features
4.5 V drive available
Unit: mm
+0.1
1.27-0.1
+0.2
4.57-0.2
0.1max
+0.1
1.27-0.1
+0.2
5.28-0.2
QG = 55 nC TYP. (ID = 80 A, VDD = 16 V, VGS = 10 V)
Built-in gate protection diode
+0.2
2.54-0.2
Surface mount device available
+0.2
15.25-0.2
Low gate charge
+0.1
0.81-0.1
2.54
+0.2
2.54-0.2
MAX. (VGS = 10 V, ID = 40 A)
+0.2
8.7-0.2
RDS(on)1 = 6.0 m
5.60
Low on-state resistance
5.08
1 Gate
+0.2
0.4-0.2
+0.1
-0.1
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Drain to source voltage
VDSS
20
V
Gate to source voltage
VGSS
20
V
ID
80
A
Idp *
320
A
Drain current
Power dissipation
TC=25
76
PD
TA=25
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to +150
* PW
W
1.5
10 s,Duty Cycle 1%
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gat cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Symbol
Testconditons
IDSS
VDS=20V,VGS=0
Min
Typ
Max
Unit
10
A
IGSS
VGS= 20V,VDS=0
VGS(off)
VDS=10V,ID=1mA
1.5
Yfs
VDS=10V,ID=40A
20
RDS(on)1
VGS=10V,ID=40A
4.8
6.0
m
RDS(on)2
VGS=4.5V,ID=40A
6.7
9.5
m
Ciss
VDS=10V,VGS=0,f=1MHZ
10
2.5
A
V
S
2800
pF
Output capacitance
Coss
1200
pF
Reverse transfer capacitance
Crss
600
pF
Turn-on delay time
ton
16
ns
23
ns
74
ns
31
ns
55
nC
9
nC
17
nC
Rise time
tr
Turn-off delay time
toff
Fall time
tf
Total Gate Charge
QG
Gate to Source Charge
QGS
Gate to Drain Charge
QGD
ID=40A,VGS(on)=10V,RG=10 ,VDD=10V
ID =80A, VDD =16V, VGS = 10 V
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