TYSEMI KTD2017

IC
IC
SMD Type
Product specification
KTD2017
TSSOP-8
Unit: mm
Features
Low ON resistance.
2.5V drive.
Mounting height 1.1mm
Composite type, facilitating high-density mounting.
1 : Drain1
2 : Source1
3 : Source1
4 : Gate1
5 : Gate2
6 : Source2
7 : Source2
8 : Drain2
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Drain-to-Source Voltage
VDSS
20
V
Gate-to-Source Voltage
VGSS
Drain Current(DC)
ID
10
V
5
A
IDP
20
A
Allowable Power Dissipation
PD
0.8
W
Total Dissipation
PT
1.3
W
Drain Current (pulse)
(PW
10ìs)
Channel Temperature
Tch
150
Storage Temperature
Tstg
-55 to +150
http://www.twtysemi.com
[email protected]
4008-318-123
1 of 2
IC
IC
SMD Type
Product specification
KTD2017
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
V(BR)DSS ID=1mA, VGS=0
Drain-to Source Breakdown Voltage
Min
Typ
Max
20
Unit
V
Drain Cut-off Current
IDSS
VDS = 20 V, VGS = 0 V
1
A
Gate Leakage Current
IGSS
VGS =
10
A
8 V, VDS = 0 V
VGS(off) VDS = 10 V, ID = 1 mA
Gate Cut-off Voltage
Forward Transfer Admittance
Yfs
Static Drain to Source On-state Resistance
VDS = 10 V, ID = 5 A
RDS(on)1 VGS = 4 V, ID = 4 A
RDS(on)2 VGS = 2.5 V, ID = 2 A
Input Capacitance
0.4
11.2
1.3
16
V
S
17
23
m
20
29
m
Ciss
VDS = 10 V,f = 1 MHz
1500
pF
Output Capacitance
Coss
VDS = 10 V,f = 1 MHz
350
pF
Reverse Transfer Capacitance
Crss
VDS = 10 V,f = 1 MHz
230
pF
Turn-on Delay Time
td(on)
19
ns
Rise Time
Turn-off Delay Time
Fall Time
190
ns
td(off)
90
ns
tf
160
ns
42
nC
4
nC
8
nC
tr
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Diode Forward Voltage
VSD
See Specified Test Circuit
VDS= 10 V,VGS = 10 V,ID = 5 A
IF = 5 A, VGS = 0 V
0.8
1.2
V
Switching Time Test Circuit
http://www.twtysemi.com
[email protected]
4008-318-123
2 of 2