TT3031NP Ordering number : ENA0330 SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor TT3031NP 50V / 3A High-Speed Switching Applications Applications • High-speed switching applications (switching regulator, driver circuit). Features • • • • Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO --50 V Collector-to-Emitter Voltage VCEO --50 V Emitter-to-Base Voltage VEBO --6 V IC --3 A --5 A Collector Current Collector Current (Pulse) Base Current ICP IB Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg PW≤10µs, duty cycle≤10% --1 A 0.8 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO Gain-Bandwidth Product hFE fT Output Capacitance Cob Conditions VCB=--40V, IE=0A VEB=--4V, IC=0A VCE=--2V, IC=--125mA VCE=--10V, IC=--300mA VCB=--10V, f=1MHz Ratings min typ max 200 Unit --10 µA --10 µA 500 130 MHz 55 pF Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN O0406EA MS IM TC-00000241 No. A0330-1/4 TT3031NP Continued from preceding page. Parameter Symbol Collector-to-Emitter Saturation Voltage VCE(sat) Base-to-Emitter Saturation Voltage VBE(sat) Collector-to-Base Breakdown Voltage V(BR)CBO Collector-to-Emitter Breakdown Voltage V(BR)CEO Emitter-to-Base Breakdown Voltage V(BR)EBO Turn-ON Time Fall Time min typ IC=--2.5A, IB=--125mA IC=--2.5A, IB=--125mA --500 --1.2 IE=--100µA, IC=0A See specified Test Circuit. tf Unit max --250 IC=--100µA, IE=0A IC=--1mA, RBE=∞ ton tstg Storage Time Ratings Conditions mV V --50 V --50 V --6 V 46 ns See specified Test Circuit. 280 ns See specified Test Circuit. 23 ns Package Dimensions Switching Time Test Circuit unit : mm (typ) 7522-002 PW=20µs D.C.≤1% IB1 IB2 OUTPUT INPUT 5.0 4.0 4.0 VR RL + + 50Ω 5.0 1kΩ 220µF 0.45 0.5 VBE=5V 470µF VCC= --25V 14.0 0.6 2.0 IC= --10IB1=10IB2= --2A 0.45 0.44 1 2 3 1 : Emitter 2 : Collector 3 : Base IC -- VCE VCE= --2V 0 --4 --1.5 --12mA --10mA --8mA --6mA --1.0 --4mA --2 --1 --2mA --0.5 IB=0mA 0 0 --0.2 --0.4 --0.6 --0.8 Collector-to-Emitter Voltage, VCE -- V --1.0 IT11591 0 0 --0.2 --0.4 --0.6 C --16mA --200 mA --2.0 --25° --20mA --10 0 --2.5 IC -- VBE --3 mA Collector Current, IC -- A mA --60 mA --3.0 Collector Current, IC -- A SANYO : NP 1.3 Ta=7 5°C 25°C 1.3 --0.8 --1.0 Base-to-Emitter Voltage, VBE -- V --1.2 IT11592 No. A0330-2/4 TT3031NP hFE -- IC 1000 hFE -- IC 1000 Ta=25°C VCE= --2V 7 7 5 3 25°C --25°C 2 7 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 V 100 7 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Collector Current, IC -- A IT11593 5 Output Capacitance, Cob -- pF 3 2 100 7 5 3 5 f=1MHz 7 5 3 IT11594 Cob -- VCB 1000 VCE= --10V 7 Gain-Bandwidth Product, fT -- MHz --1 2 --0.01 5 fT -- IC 1000 3 2 100 7 5 3 2 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A 10 --0.1 5 7 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V --0.1 7 °C 75 = Ta 2 C 25° °C 25 -- 7 --1.0 2 3 5 7 --10 2 3 5 7 IT11596 VCE(sat) -- IC IC / IB=50 7 2 3 5 --1.0 3 5 3 Collector-to-Base Voltage, VCB -- V IC / IB=20 5 2 IT11595 VCE(sat) -- IC 7 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V V 3 Collector Current, IC -- A 10 --0.01 VCE= --2 2 5 100 5 --0.01 3 .7V DC Current Gain, hFE Ta=75°C V --0 .5 --0 .2V --0 DC Current Gain, hFE 5 5 3 2 --0.1 °C 75 = Ta 7 5 --25 3 C 25° °C 2 --0.01 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A 5 7 --0.01 --0.01 --10 7 5 7 75°C 2 --0.01 3 2 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 2 3 5 IT11599 5 7 --1.0 2 3 5 7 IT11598 ASO ICP= --5A 10 0m IC= --3A s --1.0 7 5 DC op era 3 2 tio n --0.1 7 5 3 2 3 3 s Ta= --25°C 2 ms --1.0 7 --0.1 1m Collector Current, IC -- A 2 25°C 5 10 Base-to-Emitter Saturation Voltage, VBE(sat) -- V IC / IB=20 5 3 Collector Current, IC -- A VBE(sat) -- IC 3 2 IT11597 Ta=25°C Single pulse --0.01 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 Collector-to-Emitter Voltage, VCE -- V 3 5 7 IT11600 No. A0330-3/4 TT3031NP PC -- Ta 0.9 Collector Dissipation, PC -- W 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT11601 Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of October, 2006. Specifications and information herein are subject to change without notice. PS No. A0330-4/4