SEMiX 653GB176HDs -. /0 # Absolute Maximum Ratings Symbol Conditions IGBT 1 -. / 4 1 +., / 4"9 +3,, 5-, ' 6, / 78. ' ;,, ' = -, +, A -. / .7. ' 6, / 85. ' ;,, ' -;,, ' 5,, ' $ 7, CCC D +., / $ 7, CCC D +-. / 7,,, 4"9-:4 Trench IGBT Modules SEMiX 653GB176HDs +-,, > < ? -, > 1 +-. / @ +3,, Inverse Diode 4B 1 +., / 4B"9 4B"9-:4B 4B9 +, > C SEMiX 653GAL176HDs Module SEMiX 653GAR176HDs 4"9 Preliminary Data 1 1 -. / Features ! "# $%! # &$' %( Typical Applications ' # )% # Remarks ! # * +,,, # * +-,, '0 + C < < 0 4 +6 ' 4 < , 0 , < , # # "< 805 E 1 4<( Units .0- .06 507 ,07. ' +0- 1 +-. / ,0; +0+ 1 -./ -0- -06 E 1 +-./ 807 7 E - -07. -07. -0; + 9F < $6 CCC D+. "< 805 E max. + G< typ. 1 -. / 4 7., '0 < +. 1 -./C -.0 < , min. 1 -. / 1 +-./C "1$ GAL -. /0 # Characteristics Symbol Conditions IGBT GB Units -. / < SEMiX® 3s Values +-,, 4 7.,' 1 +-. / 8;05 +05 B B +08 B 7-,, -;, ;, 8,, ;3. +;, H +6, H ,0,.7 IJK GAR 20-04-2007 SCH © by SEMIKRON SEMiX 653GB176HDs Characteristics Symbol Conditions Inverse Diode B 4B 7., '> < , B, B ® SEMiX 3s Trench IGBT Modules 4""9 G 4B 7., ' #J# 7-,, 'JA < $+. > +-,, "1$L ## min. typ. max. Units 1 -. /C +03 +0; 1 +-. /C +03 +0; 1 -. / +0+ +08 1 +-. / ,0; +0+ 1 -. / +08 E 1 +-. / +06 E 1 +-. / 86, +8, ' A 38 H ,0++ IJK Module M SEMiX 653GB176HDs "NDN SEMiX 653GAL176HDs C0 $ -, -. / ,03 E +-. / + E ,0,7 IJK SEMiX 653GAR176HDs "$ # Preliminary Data 9 O 9. 8 9 95 -0. Features ! "# $%! # &$' %( Typical Applications ' # )% # Remarks ! # * . & . & 8,, Temperature sensor "+,, +,,/ "-.. OE ,07;8=.P OE (+,,J+-. ""+,,:Q(+,,J+-.+J$+J+,,R> 8..,=-P I QIR> ( This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. +,,, # * +-,, GB 2 GAL GAR 20-04-2007 SCH © by SEMIKRON SEMiX 653GB176HDs Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 3 20-04-2007 SCH © by SEMIKRON SEMiX 653GB176HDs Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Typ. transient thermal impedance Fig. 10 Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode recovery charge 4 20-04-2007 SCH © by SEMIKRON SEMiX 653GB176HDs 9S 8 % 5 <( % 20-04-2007 SCH <'M % <'" © by SEMIKRON