SEMIKRON SEMIX253GB176HD

SEMiX 253GB176HD
Absolute Maximum Ratings
Symbol Conditions
IGBT
.
.12
4
6, SEMiX® 3
Trench IGBT Modules
SEMiX 253GB176HD
Preliminary Data
Features
!
Typical Applications
" #
$%
#
Remarks
! # &
'((( # &
')((
)*+, #
)* 0( +
' 7%1".78 9 Values
Units
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)*( '0(
3((
5 )(
: ;( <<< = '*( ')*
"
"
+
;(((
);( '-(
3((
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"
'*((
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Inverse diode
.>
.>12
)* 0( +
' .>2
'( ? <? 6 )* +
Characteristics
Symbol Conditions
IGBT
)*+, #
min.
typ.
max.
Units
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*,0
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@,- '(,3
@,;
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0,3 ')
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B
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4
.
7
4 , . @ "
4 (, , 6 )* ')* +
6 )* ')* +
4 '* , 6 )* ')* +
.
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D
# #
4 (, )* , ' 2C
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B
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14
14 A,) B, 6 ')* +
A* **
G
6 )* ')* +, Inverse diode
> 7
.112
H
.>
'*( "? 4 ( ? 6 )* ')*
+, 6 )* ')* +
6 )* ')* +
.>
'*( "? 6 )* ')* +
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B
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Thermal characteristics
16:
16:M
16:>M
.4J
.
M#
>LM
1:
#
(,')
(,'-
KFL
KFL
KFL
(,(;
KFL
* 5*N
OP
3;)(
K
Temperature sensor
1)*
)* +
J)*F0*
1)1'QRJ'F):'F'S ? RKS?J
Mechanical data
2F2
O 2* F 2@
3F),*
* F*
)0A
8
GB
1
01-03-2006 GES
© by SEMIKRON
SEMiX 253GB176HD
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
2
01-03-2006 GES
© by SEMIKRON
SEMiX 253GB176HD
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance of IGBT
Fig. 10 Transient thermal impedance of FWD
Fig. 11 CAL diode forward charact., incl. RCC´+EE´
Fig. 12 Typ. CAL diode peak reverse recovery current
3
01-03-2006 GES
© by SEMIKRON
SEMiX 253GB176HD
Fig. 13 Typ. CAL diode recovered charge
4J
2T 3
2T 3
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
4
01-03-2006 GES
© by SEMIKRON