SK30GB067 # 2 34 5) Absolute Maximum Ratings Symbol Conditions IGBT (*, #6 2 34 5 $ #6 2 :34 5 $>? 899 ( ;4 / # 2 <9 5 =9 / :39 / @ 39 ( #6 2 :34 5 :9 D # 2 34 5 ;4 / # 2 <9 5 =9 / $>?2 3 $ SEMITOP 2 ( 2 =99 (A (%* B 39 (A (*, C 899 ( Units # 2 34 5 (%*, ® Values Inverse Diode $- IGBT Module SK30GB067 $->? $->?2 3 $- $-,? 2 :9 A Features !"# $%# !& !"# !&" &# $%# "' ( ) * + + ' Typical Applications , -. / 0 , 1", 1 / / # ( GB :<9 #'6 Target Data #6 2 5 $>?, SK30GAR067 / Module SK30GAL067 #6 2 :49 5 GAL /) : E &;9 EEE F:49 5 &;9 EEE F:34 5 3499 ( # 2 34 5) Characteristics Symbol Conditions IGBT min. typ. max. Units = ; 4 ( (%* (%* 2 (*) $ 2 9)8 / $*, (%* 2 9 () (* 2 (*, #6 2 34 5 9)99; / $%*, (* 2 9 () (%* 2 39 ( #6 2 34 5 3;9 / #6 2 :49 5 3 ( (*9 * (%* 2 :4 ( #6 2 :495 =9 (* $ 2 89 /) (%* 2 :4 ( #6 2 345 'E 3)< =):4 #6 2 :345 'E =)4 ; 2 : ?H = 9)= - 9):< - =3 39 :)< =;9 =9 I :); I (* 2 34) (%* 2 9 ( * >% 2 :: G >% 2 :: G * >6& $%# ( 2 ;99( $2 89/ #6 2 :34 5 (%*2@:4( G 9)<4 ( ( JK0 GAR 05-04-2007 DIL © by SEMIKRON SK30GB067 Characteristics Symbol Conditions Inverse Diode (- 2 (* $- 2 89 /A (%* 2 9 ( min. #6 2 34 5 'E #6 2 :49 5 'E (-9 - IGBT Module max. Units 3 ( :)34 ( #6 2 34 5 #6 2 :49 5 SEMITOP® 2 typ. ( : ( #6 2 34 5 G #6 2 :49 5 L G #6 2 :34 5 :< :)4 / D $>>? M $- 2 =9 / K 2 &:99 /KD * (2 ;99( >6& :)8 JK0 ? N 3 ! I :L SK30GB067 SK30GAL067 SK30GAR067 This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. Target Data Features This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. !"# $%# !& !"# !&" &# $%# "' ( ) * + + ' Typical Applications , -. / 0 , 1", GB 2 GAL GAR 05-04-2007 DIL © by SEMIKRON SK30GB067 UL recognized file no. E 63 532 #=3 , ) ") O 3 # =3 3 % # =3 %/+ # =3 05-04-2007 DIL %/> © by SEMIKRON