SK60GAL125
% , -. /) Absolute Maximum Ratings
Symbol Conditions
IGBT
(0+
%1 , -. /
&
%1 , 3-. /
&89
3-44
(
.3
5
% , 64 /
7.
5
344
5
: -4
(
%1 , 3-. /
34
?
% , -. /
@7
5
% , 64 /
-A
5
&89, - &
SEMITOP 2
( , 744 (; ('0 < -4 (;
(0+ = >44 (
Units
% , -. /
('0+
®
Values
Inverse Diode
IGBT Module
SK60GAL125
&"
%1 , 3.4 /
&"89
&"89, - &"
&"+9
, 34 ; *
5
%1 , -. /
334
5
% , -. /
.B
5
% , 64 /
76
5
Freewheeling Diode
SK60GAR125
&"
Target Data
%1 , 3.4 /
&"89
&"+9
Features
! " #$% &'% (
) * Typical Applications
+
&*
+
!$+
5
, 34 ; *
%1 , 3.4 /
&89+
5
%*1
C@4 DDD E3.4
/
%
C@4 DDD E3-.
/
-.44
(
(
5) 3 D
% , -. /) Characteristics
Symbol Conditions
IGBT
('0
('0 , (0) & , - 5
&0+
('0 , 4 () (0 , (0+
%1 , -. /
&'0+
(0 , 4 () ('0 , -4 (
%1 , -. /
(04
(0
('0 , 3. (
& , .4 5) ('0 , 3. (
(0 , -.) ('0 , 4 (
0
8' , 77 F
8' , 77 F
0
81C
&'%
min.
typ.
max.
Units
@).
.).
>).
(
4)44>
5
744
5
%1 , -. /
3)@
3)A
(
%1 , 3-. /
3)B
-)-
%1 , -./
7>
F
%1 , 3-./
@7
F
7)-
%1 , 3-./
*D
7)6.
(
, 3 9G
7)7
4).
"
"
4)--
"
6)7>
H
7)7-
H
( , >44(
&, @.5
%1 , 3-. /
('0,:3.(
7)B
(
%1 , -./
*D
1
5
Module
0
GAL
..4
4)>
(
IJK
GAR
01-06-2007 DIL
© by SEMIKRON
SK60GAL125
Characteristics
Symbol Conditions
Inverse Diode
(" , (0
&" , 34 5; ('0 , 4 (
("4
min.
typ.
max.
Units
%1 , -. /
*D
-
-).
(
%1 , 3.4 /
*D
3)BA
-)7
(
%1 , -. /
%1 , 3-. /
"
IGBT Module
(
%1 , -. /
%1 , 3-. /
SEMITOP® 2
(
3)36
&889
L
&" , 74 5
J , C344 5J?
0
(, @44(
81C
F
73).
F
%1 , 3-. /
5
?
H
3)3>
IJK
-).
(
Freewheeling Diode
(" , (0
SK60GAL125
("4
SK60GAR125
"
Target Data
Features
! " #$% &'% (
) * Typical Applications
+
&*
+
!$+
GAL
2
&" , .4 5; ('0 , 4 (
%1 , -. /
*D
-
%1 , 3-. /
*D
3)6
(
%1 , 3-. /
3
3)-
(
%1 , 3-. /
3>
--
(
&889
L
&" , .4 5
J , C644 5J?
0
(8,>44(
81C"
4)A
IJK
9
M
-
#
%1 , 3-. /
5
?
H
3A
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
GAR
01-06-2007 DIL
© by SEMIKRON
SK60GAL125
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
3
01-06-2007 DIL
© by SEMIKRON
SK60GAL125
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 10 CAL diode forward characteristic
4
01-06-2007 DIL
© by SEMIKRON
SK60GAL125
UL recognized file
no. E 63 532
%36 + ) $) N -
% 36
5
'5O
% 36
01-06-2007 DIL
'58
© by SEMIKRON