SEMIKRON SK70GAL063

SK70GAL063
' ( )* +, Absolute Maximum Ratings
Symbol Conditions
IGBT
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#
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122
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43
5
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322
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6A
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SEMITOP 2
Units
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®
Values
Inverse Diode
IGBT Module
SK70GAL063
#@
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( 32 < $
Freewheeling Diode
SK70GAR063
#@
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Preliminary Data
#@78
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Features
! Typical Applications
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6)2
5
5
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5, 3 D
' ( )* +, Characteristics
Symbol Conditions
IGBT
-9.
-9. ( -., # ( 3,* 5
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-9. ( 2 -, -. ( -."
min.
typ.
max.
Units
C,*
*,*
1,*
-
2,;
5
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5
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33
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79 ( 32 F
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08-03-2007 SCT
F
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5
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GAR
5
Module
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GAL
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3*2
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-9.(:3*-
2,1
JKL
© by SEMIKRON
SK70GAL063
Characteristics
Symbol Conditions
Inverse Diode
-@ ( -.
SEMITOP® 2
IGBT Module
#@ ( 32 5< -9. ( 2 -
min.
'/ ( )* +
$D
typ.
max.
Units
3,C*
3,6
-
'/ ( 3)* +
$D
3,C
3,6
-
-@2
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2,4*
2,A
-
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42
F
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1,*
3
5
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2,3
I
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7/B
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JKL
Freewheeling Diode
-@ ( -.
#@ ( 12 5< -9. ( 2 -
'/ ( )* +
$D
3,C
-
'/ ( 3)* +
$D
3,;
-
-@2
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2,4*
2,A
-
SK70GAL063
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1,*
33
-
SK70GAR063
#778
H
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.
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7/B@
2,A
JKL
8
M 83
)
N
Preliminary Data
Features
! Typical Applications
"
#$
"
%&"
GAL
2
5
?
3,)
3A
I
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
GAR
08-03-2007 SCT
© by SEMIKRON
SK70GAL063
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
3
08-03-2007 SCT
© by SEMIKRON
SK70GAL063
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 10 CAL diode forward characteristic
4
08-03-2007 SCT
© by SEMIKRON
SK70GAL063
UL recognized file
no. E 63 532
'34 " , &, O )
' 34
5
95!
'34
08-03-2007 SCT
957
© by SEMIKRON