SKM 145GB128D ... )- ." ' Absolute Maximum Ratings Symbol Conditions IGBT / )- . % / 1-* . %56 1)** 12* & 3* . 14- & )** & 8)* 1* < )- . 14* & 3* . 2* & )** & / 1-* . 2** & )- . 14* & 7 SEMITRANS® 2 #** 9 7 : )* 9 ; 1)** %= SKM 145GB128D / 1-* . %=56 %=56)$%= %=6 1* 9 > Freewheeling Diode SKM 145GAL128D %= / 1-* . %=56 %=56)$%= %=6 1* 9 > 3* . 2* & )** & 2** & )** & / A*>>>B 1-* . A*>>>B 1)- . A*** SKM 145GAR128D Features / 1)- . Inverse Diode SPT IGBT Module !" # $ % Typical Applications & ' ( ' )*+ , / 1-* . Module %?56@ &" 1 > )- ." ' Characteristics Symbol Conditions IGBT 7?@ 7 " % A & % 7 * " * ?@ 7 1- / )- . 7 3 B)* 57 / . '?@ '? @ 57 4 C 57 4 C 5?/@ 1 GAL %7G max. Units A"- -"- #"- *"1 *"4 & 1 1"1- *"2 1"*- / )-. 2 1) C / 1)-. 1) 1- C 1"2 )"4- )"1 )"-- 16 , D7 typ. / 1)- . % 1** &" 7 1- / )-.> )-" 7 * min. / )- . / 1)-.> GB Units )- . %56)$% Values #** % 1**& / 1)- . 7 81- 2 1 = = 1 = 1)** A E )1* A* 1) A4* #- F 1* F *"1#- HIJ GAR 13-10-2006 RAA © by SEMIKRON SKM 145GB128D ... Characteristics Symbol Conditions Inverse Diode = %= 1** &9 7 * =* min. typ. max. Units / )- .> ) )"- / 1)- .> 1"3 / )- . 1"1 1") / 1)- . = / )- . 2 14 / 1)- . ® SEMITRANS 2 SPT IGBT Module %556 D %= 1** & 'I' 4-** &I< 7 1- 9 #** 5?/@L '' SKM 145GB128D %= 1** &9 7 * =* SKM 145GAL128D = SKM 145GAR128D Features C C / 1)- . 1)* 13"- & < K F *"4# HIJ )"- Freewheeling Diode = !" # $ % Typical Applications & ' ( ' %556 D %= 1** & 'I' * &I< 7 1- 9 #** 5?/@=L '' / )- .> ) / 1)- .> 1"3 / )- . 1"1 1") / )- . 2 14 / 1)- . 1)* 13"- & < K F *"4# HIJ Module M 5NBN 4* >" 5?@ ' 6 + 6# 6 6- )- . *"K- C 1)- . 1 C *"*- HIJ 4 - O )"- - O 1#* )*+ , This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. GB 2 GAL GAR 13-10-2006 RAA © by SEMIKRON SKM 145GB128D ... ® SEMITRANS 2 Zth Symbol Zth(j-c)l Conditions Values Units 5 5 5 5 1 ) 4 A 1 ) 4 1)* 4A 2 ) *"*4 *"11)4 *"**1) +IJ +IJ +IJ +IJ A *"***) 5 5 5 5 1 ) 4 A 1 ) 4 )A* 2)1"4"*"*-A *"*114 *"**1) +IJ +IJ +IJ +IJ A *"**- Zth(j-c)D SPT IGBT Module SKM 145GB128D SKM 145GAL128D SKM 145GAR128D Features !" # $ % Typical Applications & ' ( ' )*+ , GB 3 GAL GAR 13-10-2006 RAA © by SEMIKRON SKM 145GB128D ... Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 4 13-10-2006 RAA © by SEMIKRON SKM 145GB128D ... Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance Fig. 10 CAL diode forward characteristic Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode peak reverse recovery charge 5 13-10-2006 RAA © by SEMIKRON SKM 145GB128D ... UL Regonized File no. E 63 532 L #1" L #)" L #4 7G 6 L #1 7&M L #) 13-10-2006 RAA 7&5 L #4 © by SEMIKRON