ESM5045DV ® NPN DARLINGTON POWER MODULE ■ ■ ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE FULLY INSULATED PACKAGE (UL COMPLIANT) EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS: MOTOR CONTROL ■ SMPS & UPS ■ WELDING EQUIPMENT ■ ISOTOP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CEV Parameter Collector-Emitter Voltage (V BE = -5 V) V CEO(sus) Collector-Emitter Voltage (I B = 0) V EBO IC I CM IB Emitter-Base Voltage (I C = 0) Value Unit 600 V 450 V 7 V Collector Current 60 A Collector Peak Current (t p = 10 ms) 90 A 6 A Base Current I BM Base Peak Current (t p = 10 ms) 12 A P tot Total Dissipation at T c = 25 o C 175 W V isol Insulation Withstand Voltage (RMS) from All Four Terminals to Exernal Heatsink Storage Temperature 2500 V T stg Tj Max. Operating Junction Temperature September 2003 -55 to 150 o C 150 o C 1/8 ESM5045DV THERMAL DATA R thj-case R thj-case R thc-h Thermal Resistance Junction-case (transistor) Thermal Resistance Junction-case (diode) Thermal Resistance Case-heatsink With Conductive Grease Applied Max Max 0.71 1.2 o Max 0.05 o o C/W C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Typ. Max. Unit I CER # Collector Cut-off Current (R BE = 5 Ω) V CE = V CEV V CE = V CEV T j = 100 o C 1.5 20 mA mA I CEV # Collector Cut-off Current (V BE = -5) V CE = V CEV V CE = V CEV T j = 100 o C 1 13 mA mA I EBO # Emitter Cut-off Current (I C = 0) V EB = 5 V 1 mA V CEO(SUS) * Collector-Emitter Sustaining Voltage (I B = 0) h FE ∗ V CE(sat) ∗ V BE(sat) ∗ I C = 0.2 A L = 25 mH V clamp = 450 V DC Current Gain I C = 50 A V CE = 5 V Collector-Emitter Saturation Voltage IC IC IC IC IB IB IB IB = = = = 35 35 50 50 A A A A = = = = 0.7 0.7 2.8 2.8 A A A A I B = 2.8 A I B = 2.8 A 450 V 150 T j = 100 o C 1.2 1.4 1.4 1.6 T j = 100 o C 2.3 2.3 T j = 100 o C 2 V V V V 3 V V 2 Base-Emitter Saturation Voltage I C = 50 A I C = 50 A di C /dt Rate of Rise of On-state Collector V CC = 300 V R C = 0 t p = 3 µs I B1 = 1.05 A T j = 100 o C V CE (3 µs)•• Collector-Emitter Dynamic Voltage V CC = 300 V R C = 8.5 Ω I B1 = 1.05 A T j = 100 o C 4.5 8 V V CE (5 µs)•• Collector-Emitter Dynamic Voltage V CC = 300 V R C = 8.5 Ω I B1 = 1.05 A T j = 100 o C 2.5 4.5 V ts tf tc Storage Time Fall Time Cross-over Time I C = 35A VCC = 50 V R BB = 0.6 Ω V BB = -5 V V clamp = 450 V I B1 = 0.7 A L = 0.07 mH T j = 100 o C 3.2 0.25 0.75 5 0.5 1.5 µs µs µs Maximum Collector Emitter Voltage Without Snubber I CWoff = 60 A I B1 = 2.8 A V BB = -5 V V CC = 50 V L = 42 µH R BB = 0.6 Ω T j = 125 o C VF∗ Diode Forward Voltage I F = 50 A I RM Reverse Recovery Current V CC = 200 V I F = 50 A di F /dt = -300 A/µs L < 0.05 µH T j = 100 o C V CEW T j = 100 o C ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % To evaluate the conduction losses of the diode use the following equations: P = 1.5 IF(AV) + 0.0055 I2F(RMS) VF = 1.5 + 0.0055 IF # See test circuits in databook introduction 2/8 Min. 300 400 A/µs 450 V 1.5 1.8 V 32 38 A ESM5045DV Safe Operating Areas Thermal Impedance Derating Curve Collector-emitter Voltage Versus base-emitter Resistance Collector Emitter Saturation Voltage Base-Emitter Saturation Voltage 3/8 ESM5045DV Reverse Biased SOA Foward Biased SOA Reverse Biased AOA Forward Biased AOA Switching Times Inductive Load Switching Times Inductive Load Versus Temperature 4/8 ESM5045DV Dc Current Gain Typical VF Versus IF Peak Reverse Current Versus diF/dt Turn-on Switching Test Circuit Turn-on Switching Waveforms 5/8 ESM5045DV Turn-on Switching Test Circuit Turn-off Switching Waveforms Turn-off Switching Test Circuit of Diode Turn-off Switching Waveform of Diode 6/8 ESM5045DV ISOTOP MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 11.8 12.2 0.465 0.480 A1 8.9 9.1 0.350 0.358 B 7.8 8.2 0.307 0.322 C 0.75 0.85 0.029 0.033 C2 1.95 2.05 0.076 0.080 D 37.8 38.2 1.488 1.503 D1 31.5 31.7 1.240 1.248 E 25.15 25.5 0.990 1.003 E1 23.85 24.15 0.938 0.950 E2 24.8 0.976 G 14.9 15.1 0.586 0.594 G1 12.6 12.8 0.496 0.503 G2 3.5 4.3 0.137 1.169 F 4.1 4.3 0.161 0.169 F1 4.6 5 0.181 0.196 P 4 4.3 0.157 0.169 P1 4 4.4 0.157 0.173 S 30.1 30.3 1.185 1.193 P093A 7/8 ESM5045DV Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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