STMICROELECTRONICS STC05IE150HV

STC05IE150HV
Emitter Switched Bipolar Transistor
ESBT® 1500 V - 5 A - 0.12 Ω
Features
PRELIMINARY DATA
VCS(ON)
IC
RCS(ON)
0.6 V
5A
0.12 W
■
High voltage / high current Cascode
configuration
■
Low equivalent on resistance
■
Very fast-switch, up to 150 kHZ
■
Squared rbsoa, up to 1500 V
■
Very low C ISS driven by RG = 47 Ω
■
Very low turn-off cross over time
■
In compliance with the 2002/93/EC European
Directive
Applications
■
Aux SMPS for three phase mains
■
Sepic PFC
1
23
4
TO247-4LHV
Internal Schematic Diagram
Description
The STC05IE150HV is manufactured in
Monolithic ESBT Technology, aimed to provide
best performance in high frequency / high voltage
applications. it is designed for use in Gate Driven
based topologies.
Order Codes
Part Number
Marking
Package
Packaging
STC05IE150HV
C05IE150HV
TO247-4LHV
TUBE
November 2006
Rev 2
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/7
www.st.com
7
STC05IE150HV
1 Absolute Maximum Ratings
1
Absolute Maximum Ratings
Table 1.
Absolute Maximum Ratingsn
Symbol
Parameter
Value
Unit
1500
V
VCS(SS)
Collector-source voltage (VBS = VGS = 0 V)
VBS(OS)
Base-source voltage (IC = 0, VGS = 0 V)
30
V
VSB(OS)
source-base voltage (ic = 0, vgs = 0 v)
29
V
± 17
V
Collector Current
5
A
Collector peak current (tP < 5ms)
15
A
Base current
4
A
IBM
Base peak current (tP < 1ms)
8
A
Ptot
Total dissipation at Tc = 25°C
178
W
Tstg
Storage temperature
-40 to 150
°C
150
°C
Value
Unit
0.7
°C/W
VGS
IC
ICM
IB
TJ
1.1
Table 2.
Symbol
Rthj-case
2/7
Gate-source Voltage
Max. operating junction temperature
Thermal Data
Thermal Data
Parameter
Thermal resistance junction-case____________________Max
STC05IE150HV
2
2 Electrical Characteristics
Electrical Characteristics
Table 3.
Symbol
Electrical Characteristics (TCASE = 25°C; unless otherwise specified)
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICS(SS)
Collector-source current
(V BS = VGS = 0)
VCE = 1500V
100
µA
IBS(OS)
Base-source current
(IC = 0, VGS = 0 V)
VBS(OS) = 30 V
10
µA
ISB(OS)
Source-base current
(IC = 0, VGS = 0)
VSB(OS) = 20 V
100
µA
IGS(OS)
Gate-source leakage
VGS = ± 17 V
100
nA
1.2
1.5
V
V
1.3
1.0
1.5
1.2
V
V
3
4
V
VCS(ON) Collector-source ON voltage
hFE
DC current gain
VBS(ON) Base-source ON voltage
0.6
0.8
VGS = 10 V_ IC = 5 A _ IB = 1.0 A
VGS = 10 V_ IC = 2 A _ IB = 0.2 A
VGS = 10 V_ VCS = 1 V_ IC = 5 A
VGS = 10 V _VCS = 1 V _IC = 2 A
4
8
VGS = 10 V_IC = 5 A_ IB = 1 A
VGS = 10 V_IC = 2 A_ IB = 0.2 A
VGS(th)
CISS
Gate threshold voltage
VBS = V GS ______IB = 250 µA
Input capacitance
TBD
TBD
pF
TBD
TBD
nC
TBD
TBD
ns
ns
Q GS(tot) Gate-source charge
ts
tf
6
11
INDUCTIVE LOAD
Storage time
Fall time
2
TBD
3/7
3 Package mechanical data
3
STC05IE150HV
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in compliance
with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also
marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are
available at: www.st.com
4/7
STC05IE150HV
3 Package mechanical data
TO247-4LHV MECHANICAL DATA
DIM.
mm.
MIN.
A
4.85
A1
2.20
A2
b
0.95
2.50
c
0.40
D
23.85
D1
5.15
2.50
2.60
1.10
1.30
2.90
0.80
24
24.15
21.50
E
15.45
e
2.54
e1
5.08
L
10.20
L1
2.20
L2
15.60
15.75
10.80
2.50
2.80
18.50
L3
S
MAX.
1.27
b2
‡P
TYP
3
3.55
3.65
5.50
7734874
5/7
STC05IE150HV
4 Revision History
4
6/7
Revision History
Date
Revision
Changes
30-Jan-2006
1
Initial release.
30-Nov-2006
2
The document has been reformatted
STC05IE150HV
4 Revision History
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZE REPRESENTATIVE OF ST, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS, WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS “AUTOMOTIVE
GRADE” MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2006 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
7/7