STMICROELECTRONICS STC08IE150HV

STC08IE150HV
Emitter Switched Bipolar Transistor
ESBT® 1500 V - 8 A - 0.10 Ω
Features
PRELIMINARY DATA
VCS(ON)
IC
RCS(ON)
0.8 V
8A
0.10 W
■
High voltage / high current Cascode
configuration
■
Low equivalent on resistance
■
Very fast-switch, up to 150 kHZ
■
Squared rbsoa, up to 1500 V
■
Very low C ISS driven by RG = 47 Ω
■
Very low turn-off cross over time
■
In compliance with the 2002/93/EC European
Directive
Applications
■
Aux SMPS for three phase mains
■
Sepic PFC
1
23
4
TO247-4LHV
Internal Schematic Diagram
Description
The STC08IE150HV is manufactured in
Monolithic ESBT Technology, aimed to provide
best performance in high frequency / high voltage
applications. it is designed for use in Gate Driven
based topologies.
Order Codes
Part Number
Marking
Package
Packaging
STC08IE150HV
C08IE150HV
TO247-4LHV
TUBE
December 2006
Rev 2
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/7
www.st.com
7
STC08IE150HV
1 Absolute Maximum Ratings
1
Absolute Maximum Ratings
Table 1.
Absolute Maximum Ratingsn
Symbol
Parameter
Value
Unit
1500
V
VCS(SS)
Collector-source voltage (VBS = VGS = 0 V)
VBS(OS)
Base-source voltage (IC = 0, VGS = 0 V)
30
V
VSB(OS)
source-base voltage (ic = 0, vgs = 0 v)
17
V
± 17
V
Collector Current
8
A
Collector peak current (tP < 5ms)
24
A
Base current
6
A
IBM
Base peak current (tP < 1ms)
12
A
Ptot
Total dissipation at Tc = 25°C
208
W
Tstg
Storage temperature
-40 to 150
°C
150
°C
Value
Unit
0.6
°C/W
VGS
IC
ICM
IB
TJ
1.1
Table 2.
Symbol
Rthj-case
2/7
Gate-source Voltage
Max. operating junction temperature
Thermal Data
Thermal Data
Parameter
Thermal resistance junction-case____________________Max
STC08IE150HV
2
2 Electrical Characteristics
Electrical Characteristics
Table 3.
Symbol
Electrical Characteristics (TCASE = 25°C; unless otherwise specified)
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICS(SS)
Collector-source current
(V BS = VGS = 0)
VCE = 1500V
100
µA
IBS(OS)
Base-source current
(IC = 0, VGS = 0 V)
VBS(OS) = 30V
10
µA
ISB(OS)
Source-base current
(IC = 0, VGS = 0)
VSB(OS) = 17V
100
µA
IGS(OS)
Gate-source leakage
VGS = ± 17V
100
nA
1.5
1.2
V
V
1.6
1.1
2
1.5
V
V
3
4
V
VCS(ON) Collector-source ON voltage
DC current gain
VGS = 10V_ V CS = 1V_ IC = 8A
VGS = 10V _VCS = 1V _IC = 3A
VBS(ON) Base-source ON voltage
VGS = 10V_ IC = 8A_ IB = 1.6A
VGS = 10V_ IC = 2A_ IB = 0.3A
hFE
VGS(th)
CISS
1
0.7
VGS = 10V_ IC = 8A _ IB = 1.6A
VGS = 10V_ IC = 3A _ IB = 0.3A
Gate threshold voltage
VBS = V GS ______IB = 250 µA
Input capacitance
VCS =25V _ _ _ _ _ _ f =1MHz
4.5
9
2
6
11
810
pF
45.6
nC
690
10
ns
ns
340
10
ns
ns
2.8
V
1.7
V
VGS=VCB=0V
Q GS(tot) Gate-source charge
VCS=15V _ _ _ _ _ _ VGS=10V
VCB=0V _ _ _ _ _ _ _ IC =1.4A
ts
tf
ts
tf
INDUCTIVE LOAD
Storage time
Fall time
INDUCTIVE LOAD
Storage time
Fall time
Collector-source dynamic
VCS(dyn) voltage
(500ns)
Collector-source dynamic
VCS(dyn) voltage
(1µs)
VCSW
Maximum collector-source
voltage switched without
snubber
VGS =10V_ _ _ _ _ _ RG =47Ω
VClamp =1200V _ _ _ tp =4µs
IC =4A _ _ _ _ _ _ _ _IB =0.8A
VGS =10V_ _ _ _ _ _ RG =47Ω
VClamp =1200V _ _ _ tp =4µs
IC =4A_ _ _ _ _ _ _ _ IB =0.4A
VCC =V Clamp =600V
VGS =10V _ _ _ _ _ _ IC =2A
IB = 0.4A _ _ _ __ _ _ RG =47Ω
tpeak =500ns _ __ _ _ IBpeak =4A
VCC =V Clamp =600V
VGS =10V _ _ _ _ _ _ IC =2A
IB = 0.4A _ _ _ _ _ _ _RG =47Ω
tpeak =500ns _ _ _ _ _IBpeak =4A
RG =47Ω _ _ _ _ _ _ _hFE =5
IC = 8A
1500
V
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3 Package mechanical data
3
STC08IE150HV
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in compliance
with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also
marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are
available at: www.st.com
4/7
STC08IE150HV
3 Package mechanical data
TO247-4LHV MECHANICAL DATA
DIM.
mm.
MIN.
A
4.85
A1
2.20
A2
b
0.95
2.50
c
0.40
D
23.85
D1
5.15
2.50
2.60
1.10
1.30
2.90
0.80
24
24.15
21.50
E
15.45
e
2.54
e1
5.08
L
10.20
L1
2.20
L2
15.60
15.75
10.80
2.50
2.80
18.50
L3
S
MAX.
1.27
b2
‡P
TYP
3
3.55
3.65
5.50
7734874
5/7
STC08IE150HV
4 Revision History
4
6/7
Revision History
Date
Revision
Changes
30-Jan-2006
1
Initial release.
01-Dec-2006
2
The document has been reformatted
STC08IE150HV
4 Revision History
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